VQB 27 Search Results

wiring VDG 13 relay

Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

wiring VDG 13 relay

Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

2N6715

Abstract: 2N6714 2N6726 92GU01
Contextual Info: 92GU01.01A 2N6714.15 NPN POWER TRANSISTORS 30-40 VOLTS 2 AMP, 1.2 WATTS COMPLEMENTARY TO THE 2N6726, 27/92GU51, 51A SERIES Applications: • Class “B ” audio outputs/drivers • General purpose switching and lamp drive in industrial and automotive circuits.

TAG 600

Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Contextual Info: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect

SD 214DE siliconix

Abstract: SILICONIX SD21
Contextual Info: Tem ic SD210DE/214DE Semiconductors N-Channel Lateral DMOS FETs Product Summary P a rt N um ber V BR DS M in (V) V GS (th )M a x (V ) rDS(on) M a x (Q ) Crss M a x (p F ) to N M a x (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 4 5 @ V Cs = 10V

TL 431 SO8

Abstract: 2SD203 SD203DC P3NF
Contextual Info: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R

vqb 71

Abstract: 074I sem 304 SD50G1
Contextual Info: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package

motorola TE 901

Abstract: MK1V135 2N390S MC14404
Contextual Info: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car­

D147D

Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Contextual Info: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC

HUB1200-S

Abstract: HUB1800-S
Contextual Info: !"#$% Nât !" 123333333333333333333333333333333 !"#$% !"#$%&' *+,-./01 NIMMMt !"#$%&'()*+,!"#$%&'()*+,-./012324 !"#$%&'()*%+,-%&./012 !"#$%&'()*+,-./01-234 !"#$%&'()"*+,-+./"01' !"#$%& '()*+,-+./0123 !"#$%&'()*+,-./0!$%1E !"#$%&'()*+,-./01"234 F !"#$%&'()*+"#!,-./0*1

Contextual Info: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP

2SD1664

Abstract: marking 2sd1664
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code

Contextual Info: Product catalogue | Terminals | Screwing technology | W-series modular terminals | Motor connection terminals General ordering data Order No. Part designation Version EAN Qty. Product notes Note, technical data 1615270000 MAK 2.5 Feed-through terminal, 2.5 mm², Screw

Contextual Info: DISCRETE SEMICONDUCTORS S&1EET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 Philips Semiconductors 1997 Oct 02 PH ILIPS PHILIPS Philips Semiconductors Product specification

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

EC000897

Contextual Info: Product catalogue | Terminals | Screwing technology | W-series modular terminals | Motor connection terminals General ordering data Order No. Part designation Version EAN Qty. Product notes Note, technical data 7917030000 MAK 2.5 DB Feed-through terminal, 2.5 mm², Screw

MRF393

Contextual Info: ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon Push-Pull RF Power TVansistor MRF393 . . . designed primarily for wideband large-signal output and driver amplifier

Contextual Info: Tflsa'i'n 0GGSÔ7S 40E D ROHM CO LTD h -7 > ì? 7 , % /Transistors =1 IRHM 2SD1468/2SD1468S - 7=2 7 - 0 9 2SD14S3 2SD1468S NPN '>>;□> b T s v W ^ l l ^ i a ^ ^ / M e d i u m Power Amp. Epitaxial Planar NPN Silicon Transistors • 1 Vce t sat)=6mV at 1mA/0.1 mA)

Contextual Info: Product catalogue | Terminals | Screwing technology | W-series modular terminals | Modular isolating terminals | WDT General ordering data Order No. Part designation Version EAN Qty. Product notes Product description Note, accessories 9528070000 WDTR 2.5 Disconnect and modular disconnect terminal, 2.5

3SD21

Abstract: tt 2144 bv ui 302 0220
Contextual Info: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION

CXA1684M

Abstract: 2508D
Contextual Info: CXA1684M High-Speed Transimpedance Amplifier Description CXA1684M is a low noise transimpedance amplifier, particularly suitable for fiber-optic system. CXA1684M is fabricated using high-speed bipolar process. 8 pin SOP Plastic Features • High transimpedance:

Contextual Info: November 1997 FAIRCHILD SEM ICONDUCTO R PR E LIM IN A R Y m FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

CXA1684M

Contextual Info: CXA1684M High-Speed Transimpedance Amplifier Description CXA1684M is a low noise transimpedance amplifier, particularly suitable for fiber-optic system. CXA1684M is fabricated using high-speed bipolar process. 8 pin SOP Plastic Features • High transimpedance:

ISO 8015

Abstract: KF 520 2SK2688-01 US50A
Contextual Info: FUJI 2SK2688-01 L,S N-channel MOS-FET 30V 0,0 IQ 5 0 A 6 0 W FAP-IIIB Series > Features Outline Drawing - High Current - Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated T-PACK L T-PACK S 105 4.5 Ü -JL2. _08. > Applications -