VQB 201 Search Results

vqb 201

Abstract: VQB201 VQB 28 E vqb 27 vqb 200 FUNKAMATEUR-Bauelementeinformation VQB200 Funkamateur ma702 vqb 200 d
Contextual Info: FUNKAMATEUR-Bauelementeinformation VQB 200 VQB 201 Einstellige Lichtschachtbauelemente grünstrahlend, Zeichenhöhe 12,7 mm, 16 Segmente und Dezimalpunkt, mit Diodenchips auf GaP-Basis Hersteller: VEB Werk für Fernsehelektronik Berlin TGL 42170 Kurzcharakteristik

LA6358

Abstract: LA6358NM 777T
Contextual Info: Ordering number: EN 3192 Monolithic Linear IC LA6358NM High-Performance Dual Operational Amplifier Overview The LA6358NM is an IC integrating two high-performance operational amplifiers in a single package. This operational amplifier contains an internal phase compensator and is designed to operate from a

Contextual Info: 7=12=1237 002^201 T • T -3»3 -Z P \ SGS-THOMSON poæiItLgOTiMOi TIP140T/141T/142T TIP145T/146T/147T S 6 S-TH0MS0N 3DE » LOW VOLTAGE HIGH CURRENT POWER DARLINGTON ADVANCE DATA ■ MONOLITHIC DARLINGTON CONFIGURA­ TION ■ LOW VOLTAGE « HIGH CURRENT ■ HIGH GAIN

2010C

Abstract: 2557a 2SC4188
Contextual Info: Ordering number : EN 2557A 2SC4188 N0.2557A NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications i Features • High breakdown voltage : Vceo —200V • Small reverse transfer capacitance and excellent high frequency characteristic : cre = 1.3pF typ

Contextual Info: DISCRETE SEMICONDUCTORS S&1EET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 Philips Semiconductors 1997 Oct 02 PH ILIPS PHILIPS Philips Semiconductors Product specification

MPS2907A

Abstract: MPS2907 mps2222 transistor 10PA
Contextual Info: it N AMER P H ILIP S /D IS C R E TE 5SE D • d ii 0 UU bb53T31 0 J17 3 1 0 1 ■ X MPS2907 MPS2907A T -z 'y -is r SILICON PLANAR EPITAXIAL TRANSISTOR _ PNP silicon planar epitaxial transistors in plastic TO-92 envelope for general purpose applications. NPN complement is MPS2222/MPS2222A.

3SD21

Abstract: tt 2144 bv ui 302 0220
Contextual Info: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION

PH2369

Contextual Info: Philips Semiconductors Product specification NPN switching transistors PH2369; PH2369A FEATURES PINNING • Low current max 200 mA PIN • Low voltage (max. 15 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector • High-speed switching. DESCRIPTION

2SC4475

Contextual Info: Ordering number : EN3338 2 S C 4 4 7 5 NPN Triple Diffused Planar Silicon Transistor No.3338 High-Voltage Amp, High-Voltage Switching Applications Applications • High voltage amp • High voltage switching • Dynamic focus F eatu res • High breakdown voltage Vqeo nrin = 1800V

Contextual Info: P h ilip s S em icon ducto rs P relim inary sp e cifica tio n S ilicon ep itaxial-b ase tran sistors QUICK REFERENCE DATA MIN. CONOTTIONS BD433 PINNING - TO-126 SOT32 DESCRIPTION PARAMETER collector-emitter voltage Veto MAX. UNIT SYMBOL Yces if n DESCRIPTION

energy meter diagram 3-phase reactive circuit

Abstract: 78M6631 SINE COSINE OSCILLATOR teridian
Contextual Info: USER GUIDE 78M6631 Firmware Description Document October 10, 2011 Rev 2 UG_6631_078 78M6631 Firmware Description Document UG_6631_078 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit

ECJF

Contextual Info: International IOR Rectifier P D - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

684 k 100

Abstract: BFT93 BFR93 BFR93A TRANSISTOR D 1765 lc 945 p transistor NPN
Contextual Info: bbSBTBl 0 0 £5 3*15 TDM HIAPX — N AUER PHILIPS/DISCRETE b?E » PNP 5 GHz wideband transistor Philips Semiconductors — DESCRIPTION Product specification ^ BFT93 ^ PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

VEB mikroelektronik

Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente

Contextual Info: International IQ R Rectifie r PD -5.062 G A75T S 120U PRELIMINARY Ultra-Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK -• 3 Featu res r • G en eratio n 4 IG BT te ch n o lo g y • U ltra F a st: O p tim ize d fo r high operating fre q u e n cie s 8-40 kHz in hard sw itch ing , >200

ht4 marking

Abstract: TRANSISTOR MARKING TE SOT363
Contextual Info: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 10 Philips Semiconductors 1999 May 20 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor

smd transistor 6c

Contextual Info: SflE D 312^357 □ □ □ 2 5 tiö TTT B E L A EN2016 â b fltK EN2016 F asi QuadNPN A rray äm äB äw äsR M B . 'M3-ZS ELANTEC INC F eatu res G eneral D escrip tion • • • • • T he EN2016 fam ily are quad m onolithic vertical N P N tran sis­

Nippon capacitors

Contextual Info: M O T O R O L A SC XSTRS/R F EbE D • b3b?2S4 00^12^0 2 Order this data sheet by MJD243/D MOTOROLA SEMICONDUCTOR ■ H s a n r a n ' T 3 3-0 7 TECHNICAL DATA m " NPN M JD243 PNP M JD253 P lastic Pow er Tran sistor C om plem entary Pair DPAK For S urface M ount and

VQB71

Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Contextual Info: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von

mikroelektronik ddr

Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Contextual Info: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn­ daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden

MC 151 pnp

Abstract: 2N1142 MC 3041 MC 151 transistor MC 140 transistor Germanium Transistor VHF power TRANSISTOR PNP TO-39 pnp germanium transistor
Contextual Info: M IL-S-19500/87A 31 May 1966 SUPERSEDING M IL-S-19500/87 NAVY ie lü A . . . — «, m a n SIUUU91 iö O U (See 6 .2 ) MILITARY SPECIFICATION s e m ic o n d u c t o r d e v ic e ; t r a n s is t o r , p n p g e r m a n iu m , l o w p o w e r TYPE 2N1142

SOT422A

Abstract: BLS3135-65
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES

T422A

Abstract: BLS3135-50
Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BLS31 35-50 Microwave power transistor Preliminary specification File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Apr 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

SG 2058

Abstract: transistor A62
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF947 FEATURES PINNING - SOT323 • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector