EM2016 Search Results

EN2016ACN

Abstract: tmax t7 Tmax T7 S 800 transistor SMD 2n3904 2N3904 EN2016ACJ EN2016CJ EN2016CM EN2016CN MPQ3904
Contextual Info: ELANTEC INC MIE J> S 312^557 0001757 = ES EL A EN2016/E N 2016A _ _ . 2 .5 Fast QuadNPN A rray ; HIGH PERFORMANCEANALOGINTEGRATEDCIRCUITS H 2 tss o h-* Ci s F eatures G eneral D escription • • • • • The EN2016 family are quad monolithic vertical N P N transis­

smd ic hhb

Abstract: Quad 2n3904 smd 2N3904 TRANSISTOR SMD 312 2N3904 HHB smd smd transistor A1 HB smd transistor 517 smd transistor fay ic chip hhb 551C4
Contextual Info: SflE D • 312^557 EN2016 éiantec □ □ □ 5 S E1Ö TTT ■ ELA EN2016 Fast Quad NPN Array ELANTEC '•M3-ZS INC Features General Description • • • • • T he E N 2016 fam ily are quad m on olith ic vertical N P N transis­ tor arrays w hich offer excellen t param etric m atch in g and h igh

Contextual Info: ELANTEC MIE D INC E3 312^557 G001757 T El ELA Fast QuadNPN Arrau H IGH P E R FO R M A N C E A N A LO G IN TEG R ATED CIRCUITS "T:cV ?> • 2 ,S F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • The EN2016 family are quad monolithic vertical N PN transis­

Contextual Info: EN2016C EN 2016C Fast Quad NPN A rray F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • T he EN2016 fam ily are quad m onolithic vertical N P N tran sis­ to r arrays w hich offer excellent param etric m atch in g and high speed perform ance. T he 350 M H z ft provides AC perform ance

2016A

Abstract: N2016A
Contextual Info: n t r r e n 2 o i6 /e n 2 o i6 A F a st Q u ad N P N A rra y F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • The EN2016 family are quad monolithic vertical N P N transis­ tor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides AC performance

4 npn transistor ic 14pin

Abstract: npn tr array enzo EN2016CM "PNP Transistor array" 312 2N3904 dual 2N3904 NPN Transistor 2N3904 EN2016 EN2016CN
Contextual Info: sÊ w m + m r H » PERFO RM AN CE AN ALOG ÌNTE6RATEP CIRCUITS F e a tu res • • • • • • • • • • F our independent fast N P N ’s 350 M H z ft T ig h t Vfce m atching— 1 mV T ig h t H fe m atching— 5% One chip construction w ith dielectric isolation

smd transistor 6c

Contextual Info: SflE D 312^357 □ □ □ 2 5 tiö TTT B E L A EN2016 â b fltK EN2016 F asi QuadNPN A rray äm äB äw äsR M B . 'M3-ZS ELANTEC INC F eatu res G eneral D escrip tion • • • • • T he EN2016 fam ily are quad m onolithic vertical N P N tran sis­

Contextual Info: EN2016C ÉISHlSC Fast EN2016 C Quad NPN Array HWH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features G eneral Description The EN2016 family are quad monolithic vertical N PN transis­ tor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides AC performance