VQB 18 Search Results

vqb 201

Abstract: VQB201 VQB 28 E vqb 27 vqb 200 FUNKAMATEUR-Bauelementeinformation VQB200 Funkamateur ma702 vqb 200 d
Contextual Info: FUNKAMATEUR-Bauelementeinformation VQB 200 VQB 201 Einstellige Lichtschachtbauelemente grünstrahlend, Zeichenhöhe 12,7 mm, 16 Segmente und Dezimalpunkt, mit Diodenchips auf GaP-Basis Hersteller: VEB Werk für Fernsehelektronik Berlin TGL 42170 Kurzcharakteristik

VQB 28 E

Abstract: vqb 27 VQB28 Siebensegmentanzeige VQb 28 VQB 18 VQB16 vqb 27 f VQB27 VQB18
Contextual Info: FUNKAMATEUR-Bauelementeinformation Einstellige Lichtschachtbauelemente rot- bzw. grünstrahlend, Ziffernhöhe 19,6 mm, mit Diodenchips auf GaA/As- bzw. GaP-Basis VQB16/17/18 VQB 26/27/28 T G L 55111 Hersteller: V E B W erk für Fernsehelektronik Berlin Kurzcharakteristik

2n5551 transistor

Contextual Info: TOSHIBA 2N5551 Transistor Unit in mm Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications 0 45 Features • High Collector Breakdown Voltage jtT 0.35MAX. IB 0 45 I " Vcbo = 180V, VCE0 = 160V • Low Leakage Current I - Iqbo ~ 50nA Max. @ Vqb = 120V

IRC 265

Abstract: DP63950 DP83950BVQB DP83950BVQB-MPC MNDP83950B-VQB T101 T102 T103 T104 T105
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 10/24/94 Last Update Date: 02/24/99 Last Major Revision Date: 10/24/94 MNDP83950B-VQB REV 0B0 REPEATER INTERFACE CONTROLLER General Description The "RIC" may be used to implement an IEEE 802.3 multiport repeater unit including the

wiring VDG 13 relay

Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

wiring VDG 13 relay

Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

wiring VDG 13 relay

Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

Contextual Info: SIEMENS BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=10ki!, R2=47kii Type Marking Ordering Code Pin Configuration BCR 185 WNs Q62702-C2263 1=B Package 2=E 3=C SOT-23

Contextual Info: SIEMENS BCR 183W PNP Silicon Digital Transistor Type Marking O rdering Code Pin Configuration BCR 183W W Ms Q62702-C 2276 1= B Package 2 = E 3 = C SOT-323 M axim um Ratings Param eter Sym bol C ollector-em itter voltage ^CEO 50 C ollector-base voltage ^CBO

MQ918

Abstract: MD918
Contextual Info: MOT OROL A SC XSTRS/R F 4bE b3b?SSM D QQR2fl72 7 «nO Tb ~ 7^¥3iZ S MOTOROLA SEMICONDUCTOR! TECHNICAL DATA h A ä MD918HX, HXV (DUAL) MD918FHXV (DUAL) MHQ918HX, HXV (QUAD) MMCM918HXV (SINGLE) MQ918HXV (QUAD) NPN Silicon Duai/Quad Small-Signal Transistors

2N930

Contextual Info: 3QE ]> 7 t 2 clS37 0 0 3 1 1 0 1 3 SCS-THOMSON ^ D O S ] ll L i ( g lF [ R ] ( Q ) K ! l D Û S S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS D E S C R IP T IO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO -18 metal case, designed for

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 1 8 9 3 S $ id L SEMICONDUCTORS Type 2N1893S G e n e ric P a rt N u m b e r: 2N 1893 G eom etry 4500 P olarity NPN Q ual Level: JAN - JA N TXV

Contextual Info: 3GE D rz 7 “ 7# • 7^237 QG3114^ 1 ■ "T*3S-| 5 SGS-THOMSON 5 _Œ Û T O « S _ 2 N 3 0 1 3 S 6 S-THOMSON HIGH SPEED SATURATED SWITCHES D ESCRIPTIO N The 2N3013 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case intended for high

BCI82

Abstract: BC212L BC212L complementary BC182 bc182l BCI82L BC21 BC212 NPN ECB
Contextual Info: l/ K U DESCRIPTION The B C 182, B ' i 82L (N PN & BC212, B C 212L (PN P) are complem entary silicon planar epitaxial transistors for use in A F small signal amplifiers and drivers, as well as for low power universal applications. Both types feature good linearity o f D C current gain.

CT bc182

Abstract: bc212l BC182
Contextual Info: CRO D E S C R IP T IO N The B C 182, B ' i 82L (N PN & B C 212, BC 212L (PN P) are complementary silicon planar epitaxial transistors for use in AF small signal am plifiers and drivers, as w ell as for low power universal applications. Both types feature good linearity o f DC current gain.

BC182

Abstract: BC183 BC184 bc183 motorola BC182A BC182B BC237 bc 182 BC183 3
Contextual Info: BC182,A,B BC183 BC184 M A X IM U M RA TIN G S S ym b o l R a tin g BC BC BC 182 183 184 U n it C ollector-E m itter Voltage VCEO 50 30 30 Vdc Collector-Base Voltage VCBO 60 45 45 Vdc Em itter-Base Voltage Vebo 6.0 Vdc C ollector Current - Continuous ic 100

Contextual Info: SIEMENS BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1 .2 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code

SD 214DE siliconix

Abstract: SILICONIX SD21
Contextual Info: Tem ic SD210DE/214DE Semiconductors N-Channel Lateral DMOS FETs Product Summary P a rt N um ber V BR DS M in (V) V GS (th )M a x (V ) rDS(on) M a x (Q ) Crss M a x (p F ) to N M a x (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 4 5 @ V Cs = 10V

Contextual Info: SIEMENS BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA * fT = 7G H z F = 2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

491 marking transistor

Abstract: 2SC4317
Contextual Info: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lGH z M A X IM U M RATINGS (Ta = 25°C)

TL 431 SO8

Abstract: 2SD203 SD203DC P3NF
Contextual Info: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R

2SC4475

Contextual Info: Ordering number : EN3338 2 S C 4 4 7 5 NPN Triple Diffused Planar Silicon Transistor No.3338 High-Voltage Amp, High-Voltage Switching Applications Applications • High voltage amp • High voltage switching • Dynamic focus F eatu res • High breakdown voltage Vqeo nrin = 1800V

vqb 71

Abstract: 074I sem 304 SD50G1
Contextual Info: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package

motorola TE 901

Abstract: MK1V135 2N390S MC14404
Contextual Info: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car­