VQA 27 F Search Results

5252 F 1006

Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Contextual Info: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

A277D

Abstract: applikation heft A225D "halbleiterwerk frankfurt" VQA 13 VQA13 information applikation A302D Transistoren DDR halbleiterwerk
Contextual Info: J motkr^elel-ctsnonH-c Information Information - Applikation v : 1 . •' LEDAnsteuerungsscbaltkreis A 277 D * Eigenschaften und Einsatzmöcjlichkeiten - M ikroelektronik H eft 10 v e b h albleiterw erk fr a n k fu r t/ o d e r laitbetrieb im veb Kombinat mikraelektronik

A209K

Abstract: 1pm05 tda 7812 KA213A KP303D B342D sft353 GL 7812 u 711 service-mitteilungen
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D US TR IEV E R TR IE B R U N D F U N K U N D FERNSEHEN jf jl f j= = Ì 3 I ra d io - television AUSGABE: 1985 3 S e ite 1 - 4 Ü b e r s i c h t über d ie w ic h tig s te n H a lb le ite r Stand* A p ril 1985 Die in den S e rv ic e -M itte ilu n g e n N r. 3 /8 2 v e r ö f f e n t l ic h t e Über­

2N7007

Contextual Info: SILICONIX INC Ô2SM73S QGmGST 1 1ÛE D fX S ilic o n ix 2N7007 incorporated -T -U l-U ä N-Channel Enhancem ent-M ode M OS Transistor TO -92 PRODUCT SUMMARY V BR DSS (V) fDS(ON) (ii) >d (A) PACKAGE 240 45 0.065 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDN24 (See Section 7)

3D24N2Y

Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

APT8030LVFR

Contextual Info: APT8030LVFR A dvanced PO W ER Te c h n o lo g y soov 27A 0 .300Q POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

sm 126 ao 570

Contextual Info: A d P O T e v a W c n E h c e A d P T 5 1 J V F R R n o l o g y 5 POWER MOS V v 4 4 0 . 1 a o o q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

DDR Schaltkreise

Abstract: elektronik DDR service-mitteilungen Stern Radio robotron sensomat 3000 sensomat 18 servicemitteilungen bauelemente DDR GER-A
Contextual Info: SERVICE-MITTEILUNGEN -television VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEH EN r a d io AUSGABE: AUGUST Sä SEITE 1-8 3lO W i c h t i g s t Fernsehnorm Fernsehbereiche Bildröhre ; Senderwahl Rundfunkbereiohe Anschlüsse Stromversorgung Abmessungen G e w io h t

E720BXF

Abstract: EDGE720 E720BXF EDGE Edge710 EVM720BXF
Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load HIGH-PERFORMANCE PRODUCTS – ATE Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range

Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable

Edge710

Abstract: E720BXF Edge4707B EVM720BXF
Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable

VQB71

Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Contextual Info: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von

Contextual Info: SANYO SEMICONDUCTOR CORP bOE J> 7 T î7 D 7 b 001D781 M2I « T S A J Ordering number : EN3K4161 -r -n s -2 & -o S ' C M O S LSI Overview Package Dimensions T he LC 8920 is designed for synchronous, half-duplex, 9,600 bps CMOS single chip modem applications using

at73c

Contextual Info: Features * Six Independent, Differential-Input, 16-bit Sigma-Delta A/D Converters with Synchronous Sampling * Serial Multiplexed Output Interface * On-chip Supply Voltage Monitoring * Pin Selection of Reference Voltage Source, Internal or External * Integrated Solution for Various Multi-channel M easurem ent Systems

A109d

Abstract: Halbleiterbauelemente DDR VEB mikroelektronik mikroelektronik DDR a211d B109D "halbleiterwerk frankfurt" VEB Kombinat zf filter VEB Kombinat halbleiterwerk
Contextual Info: Halbleiter-Bauelemente Semiconductors 1981 D ie vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der D D R gefertigten H albleiterbauelem ente. Dem Anw ender soll durch diese Übersicht die Auswahl d er jew eils in Frage kommenden

QILE44P-410T

Abstract: PCC-044T-01 CCD circuit TK064
Contextual Info: TEKTRONIX INC/ INTEGRATED ‘T C I / I £ L f\ B1E D INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES • S^DbiaM DQDQISS fc, . %V * J - \ W " SPECIFICATION^ ORDERING INFORMATION, Front Illuminated or thinned back illuminated 64 X 64 pixels Unique thinning and

Contextual Info: J^EtSzG RET1CON Bmreal0J ^ Z t CCD TOI Array Introduction Horizontal Output EG&G Reticon’s bidirectional TDI arrays are high-speed, CCD imagers designed to operate in the Time Delay Integra­ tion TDI mode. Applications for Reticon TDI arrays include industrial inspection, noncontact measurement, pattern rec­

ev charging

Abstract: sinusoidal ac waveform 78M6610
Contextual Info: 78M6610+LMU Energy Measurement Processor for Load Monitoring Units GENERAL DESCRIPTION FEATURES The 78M6610+LMU is an energy measurement processor EMP for load monitoring and control of any 2-wire singlephase or 3-wire split-phase (120/180°) AC circuit. It

Contextual Info: 78M6610+LMU Energy Measurement Processor for Load Monitoring Units GENERAL DESCRIPTION FEATURES The 78M6610+LMU is an energy measurement processor EMP for load monitoring and control of any 2-wire singlephase or 3-wire split-phase (120/180°) AC circuit. It

MAX78700

Abstract: MAX78615 TRANSFORMER CT 50mA - 5A 230V ssi protocol bdxxx vqb 71 BDXXXX
Contextual Info: MAX78615+LMU Isolated Energy Measurement Processor for Load Monitoring Units GENERAL DESCRIPTION FEATURES The MAX78615+LMU is an isolated energy measurement processor EMP for load monitoring and control of any 2-wire single-phase or 3-wire split-phase (120/180°) AC circuit. It