VPT09050
Abstract: *08P06P transistor SMD 352
Contextual Info: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3
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spd08p06pspu08p06pvpt09050vpt09051+6p-t0252q67040-s4153-a2p-t0251-3-1q67040-s4154-a208p06ptransistor smd 352
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VPT09050
Abstract: VPT09051
Contextual Info: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A
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spux5n60s5spdx5n60s5vpt09051vpt09050+3x5n60s5p-t0251-3-1p-t0252
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VPT09051
Abstract: transistor ag qs VPT09050
Contextual Info: SIEMENS SPUX2N60S5 SPDX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPUX2N60S5 Vds 600 V to 4.5 A
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spux2n60s5spdx2n60s5vpt09051vpt09050+4x2n60s5p-t0251-3-1p-t0252transistor ag qs
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smd diode code pj 70
Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
Contextual Info: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V
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spd30n03spu30n03vpt09q50vpt09051+8p-t0252q67040-s4144-a2p-t0251-3-1q67040-s4146-a2smd diode code pj 70uras 10pj 68 smd diodesmd diode code pj 50
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Siemens DIODE E 1220
Abstract: VPT09050
Contextual Info: SPD28N03L SPU28N03L SIEMENS SIPMOS Power Transistor • N-Channel /X • Enhancement mode • Avalanche rated VPT09050 VPT09051 • Logic Level • dvld t rated • 175°C operating temperature Type ^DS b SPD28N03L 30 V 28 A SPU28N03L ffDS on (5) VGS
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spd28n03lspu28n03lvpt09050vpt09051+5p-t0252q67040-s4139-a2p-t0251q67040-s4142-a2siemens diode e 1220
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Contextual Info: SPD 08P06P SPU 08P06P P re lim in ary Data SIPMOS Power Transistor • P-Channel 3 / • Enhancement mode • Avalanche rated Î VPT09051 VPTÛ9050 • d v /d t rated • 175°C operating tem perature Type Vfes b f f D S io n i SPD08P06P -60 V -8.8 A 0.3 ß
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08p06pspd08p06pp-t0252q67040-s4153-a2+5p-t0251-3-1spu08p06p67040-s4154-a2235b05g133s60
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Diode smd code sm 97
Abstract: VPT09051 SPD09P06PL SPU09P06PL Q67042-S4020 VPT09050
Contextual Info: Infineon SPD09P06PL SPU09P06PL Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage '/ ds -60 V • Enhancement mode Drain-source on-state resistance ^DS on 0.25 Q • Avalanche rated Continuous drain current
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spd09p06plspu09p06plvpt09050vpt09051+5p-t0252q67042-s4007p-t0251-3-1q67042-s4020diode smd code sm 97
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