VP06 Search Results

Contextual Info: VP0645 VP0650 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information If Order Number / Package b v dss / R ds<on BVdgs max) TO-39 TO-92 TO-220 Diet -450V 30« -0.2A VP0645N2 — — VP0645ND -500V 30Q -0.2A — VP0650N3 VP0650N5

VP0635N3

Abstract: VP0640N5 VP0640N2
Contextual Info: VP 06D t ì ì S u p e r t e x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV0SS/ ^DS<ON ' d ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE+ -350V 25£i -0.4A VP0635N2 VP0635N3

VP0610, sot23

Abstract: marking HSs SOT23 TO206AC VP0610T
Contextual Info: SILICONIX INC läE D C X Silico n ix X V • Ö25473S 0014110 □ VP0610 SERIES in c o rp o r a te d P-Channel Enhancement-Mode MOS Transistors T Z I-Z S PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) (Í1 ) (V) VP0610E -6 0 10 TO-92 ■o (A) PACKAGE -0.25

VP0610T

Abstract: 0610L BS250 TP0610T
Contextual Info: TP0610U T , VP061OL/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V (B R )D SS Min (V) r D S (o n) Max ( Q ) v G S (th) Ip (A) (V) TP0610L -6 0 10 @ V Gs = - 1 0 V -1 to -2 .4 TP0610T -6 0 10 @ V GS = - 1 0 V -1 to -2 .4

mosfet bs250

Abstract: BS250 VP0610T 0610L AN804 TP0610L TP0610T VP0610L BS250 mosfet
Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4

BS250

Abstract: mosfet bs250 VP0610T TP0610L TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 PRODUCT SUMMARY PART NUMBER V BR DSS MIN (V) RDS(ON) MAX (W) VGS(TH) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T

VP0635N5

Abstract: VP0640N5 diode 400V 4A VP0635N2 VP0635ND VP0640 TO-220 VP0640N3 VP0635 VP0640ND
Contextual Info: VP0635 VP0640 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 TO-220 DICE† -350V 25Ω -0.4A VP0635N2 VP0635N3 VP0635N5 VP0635ND -400V 25Ω -0.4A VP0640N2

VP0645N5

Abstract: A 933 S transistors 931 100 6w VP0645N2 VP0645N3 VP0645ND VP0650N2 VP0650N3 VP0650N5
Contextual Info: VP0645 VP0650 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 TO-220 DICE† -450V 30Ω -0.2A VP0645N2 VP0645N3 VP0645N5 VP0645ND -500V 30Ω -0.2A VP0650N2

equivalent of BS250

Abstract: BS250 datasheet TA 7061 BS250 VP0610T part marking for tp0610t TO-92-18RM TP610L TP0610L TP0610T
Contextual Info: TP610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOS Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60

2n7000 equivalent

Contextual Info: P-Channel Enhancement-Mode MOS Transistors, VP0610 Series _ _ - CQIOOIC CORPORATION v VP0610E/ VP0610L/ VP0610T FEATU RES O R D ER IN G INFORMATION • • • • Part P-Channel Equivalent to 2N7000 Series Available in Su rface Mount SOT-23 Low rDS on .

A 933 S transistors

Abstract: VP0645N5 VP0650N2 VP06E
Contextual Info: VP 06E LJ S u p ertex inc. ✓jpv P-Channel Enhancement-Mode M B/ Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BV dss / ^DS O N) *D|ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE* -450V 3on -0.2A VP0645N2 VP0645N3

VP0610T

Abstract: vp0610t marking
Contextual Info: VP0610 SERIES P-Channel Enhancement-Mode MOS Transistors J 7 IS 3 & TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) r DS(ON) ( fl) (A) PACKAGE VP0610L -6 0 10 -0.18 TO-92 VP0610T -6 0 10 -0.1 2 SOT-23 Performance Curves: •d 1 SOURCE

Contextual Info: _ _ VP0635 VP0640 — P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d(ON) BV dgs (max) (min) TO-39 TO-92 TO-220 DICE+ -350V 25Q -0.4A V P 0 635 N 2 V P 0 635 N 3 V P 0 635 N 5 V P 0 635 N D -400V

VP0645N3

Abstract: VP0645N5 VP1206N5 VP0645ND VP0650N2 VP0650N3 VP0650ND VP1106N2 VP1106N5 VP1106ND
Contextual Info: - f m Vd s m « *± X £ Vg s f ê T a - 2 5 aC Pd Id I dss I g ss Vg s th) or % * F Ds(on) V c s= * /CH Vd g (V) (A) * /CH (nA) * (V) SUPERTEX P -450 ± 2 0 -0. 1 i VP0645N5 SUPERTEX P -450 ± 2 0 -0. 25 45 VP0645ND SUPERTEX P -450 ± 2 0 VP0650N2 SUPERTEX

BS250

Abstract: TP0610L VP0610T AN804 TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix PĆChannel EnhancementĆMode MOS Transistors TP0610L TP0610T Product Summary VP0610L VP0610L BS250 Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T VP0610L

RA SOT23

Abstract: VP0610T
Contextual Info: VPDS06 P-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-92 TO-226AA • VP0610L, TP0610L Single SOT-23 • VP0610T, TP0610T Single Chip • Available as VPDS1CHP iTSìSSS D EVICE T Y P IC A L C H A R A C T E R IS T IC S O utput C h a ra c te ris tic s

A 933 S transistors

Abstract: p06e
Contextual Info: V P 06E ßi S u p ertex inc . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / Order Number / Package b v dgs R dS(ON (max) ' d(ON) (min) TO-39 TO-92 TO-220 DICEt -450V 3on -0.2A VP0645N2 VP0645N3 VP0645N5

VP0650N5

Abstract: VP0645N2 VP0645ND VP0650N3 VP0650ND
Contextual Info: – E T E L VP0645 O S B O – VP0650 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 TO-220 Die† -450V 30Ω -0.2A VP0645N2 — — VP0645ND -500V 30Ω -0.2A

BS250

Abstract: mosfet bs250 VP0610T BS250 mosfet bs250 siliconix 0610L AN804 TP0610L TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4

VP0650N5

Abstract: VP0645N2 VP0645ND VP0650N3 VP0650ND
Contextual Info: VP0645 VP0650 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 TO-220 Die† -450V 30Ω -0.2A VP0645N2 — — VP0645ND -500V 30Ω -0.2A — VP0650N3 VP0650N5

vp0635n5

Abstract: vp0640 vp0640n5 VP0635N3
Contextual Info: VP0635 VP0640 . i n c P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON BVqgs (max) -350V 25£i -400V 25£2 Order Number 1 Package If b v dss/ TO-39 TO-92 TO-220 DICEt -0.4A VP0635N2 VP0635N3 VP0635N5 VP0635ND -0.4A VP0640N2 VP0640N3

bs250

Abstract: mosfet bs250 tp0610lt VP0610T TP0610T
Contextual Info: TP0610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part N u m b e r V BR>DSS M in (V r DS(on) M a x (f ì) V GS(th) (V ) I d (A) TP0610L -60 10 @ V o s - -10 V -1 to -2.4 -0.18

2n7000 complement

Abstract: bs250 complement 2n7000+complement TP0610LVT 2N7000 transistor BS250
Contextual Info: •J E T * incorporated VPDS1 DIE P-Channel Enhancement-Mode MOS Transistor VPDS1CHP* BS250 TP0610LVT VP0610L/T ‘ Meets or exceeds specification for all part numbers listed below Source Pad 0.0041 0 . 104 0.0049 For additional design information please consult the

VP0610T

Abstract: vp0610t marking 2N7000 VP0610E VP0610L XVP0610
Contextual Info: P-Channel Enhancement-Mode MOS Transistors, VP0610 Series CQIOQIv CO RPO RATIO N VP0610E/ VP0610L / VP0610T FEATURES ORDERING INFORMATION • P-Channel Equivalent to 2N7000 Sériés • Available In Surface Mount SOT-23 Part • Lowros on .