VO 1D Search Results

Contextual Info: JHltron PRODUCT DEVICES,INC. 600V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VDSS Drain-source Vo It. 1 Dr a in-Gat e Vo 1tage VDGR (Rg s -I.OM o ) (1) Gate-Source Voltage VGS Con t inuous Drain Current Continuous ID (Tc = 2 5 ‘C) 1DM Drain Current Pulsed(3)

SDF9140

Abstract: zo470
Contextual Info: Ævttxon PRODUCT DEVICES.INC. P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo 1t . 1 Drain-Gate Vo 1tage (Rss-l.OMn) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25°C) Drain Current Pulsed(3)

Contextual Info: / ‘utren PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 1177 BLUE HERON BLVD.• RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 5 1 -343S «FAX: (407) 863-5946 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1t .(1) Dra in-Gate Vo 1tage

SDF1NA60

Abstract: Power DIODE A30 a30 DIODE DIODE A30
Contextual Info: Æntran PRODUCT DEVICES,INC. N-CHANNEL ENHANCEMENT MOS FET 600V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL VDSS Drain-source Vo It. 1 Drain-Gate Vo 1tage VDGR (Rg s =1-OM o ) (1) Gate-Source Voltage VGS Continuous Drain Current Continuous ID iTc = 25'C)

Contextual Info: Æ lltron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD.• RIVIERA BEACH, FLORIDA 33404 TEL : 407 848-4311 • TLX: 51-3435 «FAX: (407) 863-594G N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL UNITS Drain-source Vo It.(1) Drai n-Gate Vo 1tage

SDF9240

Abstract: BA57
Contextual Info: Æutron PRODUCT DEVICES.INC. P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER' SYMBOL Drain-source Vo 1t . 1 Drain-Gate Vo 1tage ( R g s - I . O M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25 C) Drain Current Pulsed(3)

Contextual Info: Æ litro n PRODUCT DEVICES.INC. 330] ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33-107 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 500V, 2.5A, 3. On ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Vo 1t .(1) Dra in-Ga te Vo 1tage

Contextual Info: Æwtran PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL UNITS Drain-source Vo 1t .(1) Dra in -Ga te Vo 1tage (Rgs = 1•O M n ) Cl)

SDF420

Abstract: D25A
Contextual Info: Æ ntron PRODUCT DEVICES,INC. CÂTÂLO' N -CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 500V, SYMBOL UNITS Drain-source Volt. l Dra in-Gate Vo 1tage (R gs = 1•O M n ) (1) G a te-Souree Vo 1tage Cont inuous Drain Current Continuous (Tc = 25°C)

Contextual Info: ^ ¡ » lit r o n UFA? dev ,E E S . _ PRODUCT N-CHANNEL ENHANCEMENT MOS FET 900V, 12A , 0 .9 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo 1t . 1) Drai n-Gate Vo 1tage ( R g s » 1 . 0 M ci ) (1) Gate-Source Voltage Con t inuous

Contextual Info: ^ ¡ » l i t r o n d e v i c e s . , NC. _ PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET 2 0 0 V , 5 0 A, 0.05 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Dr ain-source Vo It . 1 Dra in-Ga te Vo 1 tage (RGS-l.OMn) UNITS SYMBOL (1) Gate-Source Voltage

FRMB1211C-TR

Abstract: 251C
Contextual Info: 3 # # [ E * SYM. S-No. : 025071 2006. _ K tt Í ZONE I ♦ REVISIONS REV. NO. A B ft DATE in * * * NTF. NO. REV. BY A »rBSÈfi- G1. 18 A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3 :7 / - F

SDF034

Contextual Info: Æ u t r o n , , „ p ir o q u o t â t a lq o N-CHANNEL ENHANCEMENT MOS FET 60V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 11 . 1 VDSS Dra in-Gate Vo 1tage VDGR (Rgs = 1.OMn) (1) Gate-Source Voltage VGS Con t inuous Drain Current Continuous

ALQQ

Abstract: mosfet M05
Contextual Info: Æutran JM 8^4 3 H ,_ product 'i?T L X ^ S 1-3 4 3 5 ^ » FAX : F 4 0 7 * 8 6 3 - S94G N-CHANNEL ENHANCEMENT M05 FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo It.(1) VDSS Dra in-Gate Vo 1tage VDGR (Rg s -1-OMo ) (1) Gate-Source Voltage

FYMG1211C-TR

Abstract: ltt2 251C
Contextual Info: 3 # # [ E * SYM. S-No. : 025071 K tt Í ZONE I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F

Contextual Info: Æ utran p r o d u c t g a t â l q q N-CHANNEL ENHANCEMENT MOS FET 'rLU.&f ABSOLUTE MAXIMUM RATINGS PARAMETER Drain- so ur ce Vo 1t . 1) Dr a in-Ga te Vo 1tage (R gs =1.0M o ) 6 0 0 V, UNITS SYMBOL (1) Gate-Source Voltage Con t inuous Drain Current Co ntinuous

FYMB1211C-TR

Abstract: 251C
Contextual Info: 3 # # [ E * SYM. S-N o. : 025071 K Í tt ZONE I I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3:7 / - F

tegra 3

Abstract: tegra 2
Contextual Info: Æ iit r o n PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 840-4311 FAX: (407) B63-5946 N-CHANNEL ENHANCEMENT MOS FET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Dro i n - s o u r c e Vo 1 t . ( 1 ) D r a i n - G o t e Vo 1t age

SDF350

Contextual Info: Æ ntron PRODUCT CÂTÂLO' DEVICES.INC. N -CH ANN EL ENHANCEMENT MOS F E T 400V, 15A, 0.30G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL D r a i n - s o u r c e Vo l t . l Dra in-Ga te Vo Itage (Rg s =1.0Mo ) (1) Gate-Source Voltage Continuous Drain C u rrent C o n t i n u o u s

Contextual Info: 11. ELECTRICAL Absolute CHARACTERISTICS maxi mum ratings 1 t em T_ a = 25°C Cond i t i on Rating Output vo 1 t a g e Low-level o o vo 1 t a g e to +7.0 V a v dd -0.5 to Vq q + 0 . 5 V > < Input voltage -0.5 -0.5 to +0.5 V v l -0.5 to +VqD+ 0 . 5 V -0.5

Contextual Info: FAST CM O S EEPROM 16K 2 K x 8-BIT IDT78C16A FEATURES: DESCRIPTION: • 5 vo lt o n ly ope ra tio n • Fast a c ce ss tim es The ID T78C 16A Is a 5 vo lt o n I x 8 E le ctrica lly Erasable Prog ra m m a b le R ead-O nly Memi EPROM ). T h is high-speed

SDF50N40

Contextual Info: J ^ U tT o n PRODUCT D EV I C ES . I NC . 3301 ELECTRONICS WAV • WEST PALM BEACH.FLORIDA 33407 T E L : 4 0 7 848-4311 • TLX: 5 1-3435 « FAX: (407) 8G3-5946 N-CHANNEL UNITS SYMBOL D r a i n - s o u r c e Vo 1t . ( 1 ) D r a i n - G a t e Vo 1t a g e

Contextual Info: Æ iitro n ,- _ PRODUCT liz? 5b¥f SSÏÏsn'î’n'x"1?[E?Ì3ÌE.'S i:fì S ì ;a«” ”« 6 n - ch a n n el en h an cem en t m o s f e t 500 V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1t .(1 VDSS Drain-Gate Vo 1tage VDGR (R g s -I.OM ci) (l)

SDF10N100

Contextual Info: Æ titron PRODUCT GÂTÂL 1 DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 1000V, 10A, l .2 n ABSOLUTE MAXIMUM RATINGS PARAMETER D r a in - s o u rc e Vo 1t . 1 D ra in -G a te Vo 1tage (R g s =1.0Mo ) (1) G ate -S ou rce V o lta g e Cont inuous D ra in C u rre n t C o n tin u o u s