VK200 INDUCTOR Search Results

2N4933

Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
Contextual Info: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International

ferroxcube for ferrite beads 56-590-65

Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
Contextual Info: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar

rfc vk200

Abstract: SD1012
Contextual Info: 04C D J L j ^ l L 37 S G S-THOMSON IT '7 ? ~ P 7 0000015 ^ I SOLID $TAtE MIÇROWAVE SD1012-4 ! ^THOMSON-CSF COMPONENTS CORPORATION r j:Mont^pmVvviÎÎè^PAX8^36 • C2fSt 362-85QÓ Ì« TWX Slb:66r^729St^ 7.5 VOLT VHF COMMUNICATIONS TRANSISTOR DESCRIPI10N

SD1088

Abstract: vk200 RFC vk200 rfc with 6 turns zd470 rfc vk200
Contextual Info: s G S - T H O M S O N OMC 0 | 7^ 53? aGOOGEl 4 | ° T -ìì-t* UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1088 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes tuned Q technology which consists of a matching network at

Contextual Info: <£e.mi-dond\jLcko\ Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and

vk200 RFC

Abstract: thomson microwave transistor sd1234
Contextual Info: S~ G S-THOMSON Q4C ° J 7121237 OODOQBI 1 l ~ SOLID STATE MICROWAVE _ T \ 7 * ~ °* L ' : SD1234 THOMSON-CSF COMPONENTS CORPORATION . Montgomeryville, PA 18936 • 215 855-8400 ■ TWX 510-661-7299 . _ UHF C O M M U N I C A T I O N S T R A N S I S T O R

VK200 rfc

Abstract: SD1410 SD-1410
Contextual Info: G S-THOMSON GSC D | 7 ^ 2 3 7 □ÜGQ1 7b T SOLID STATE MICROWAVE SD1410-1 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville,.PA 18936» {215} 362-8500 • TWX 510-66Î-7299 10 W, 12.5 V UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1410-1 is a 12 volt epitaxial silicon NPN planar

SD1089

Abstract: vk 200
Contextual Info: I S G S-TH O M SG N □ SC D I 7 ^ 2 3 ? QODQltiM D T '- M SOLID STATE MICROWAVE SD1089 THOMSON-CSF COMPONENTS CORPORATION Montgomery ville, PA 18936 • 215 362-8500 •TWX 510-661-7299 40 W, 12.5 V, UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1089 is a 12.5 volt epitaxial silicon NPN planar

DL110

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Contextual Info: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

SD1080-2

Contextual Info: s G S-THOMSON S O L I D QMC D | ?^2ci23? OQaDDlfl 4 I ” ' T ~ ? 3 ~ 6 i i r~ S T A T E M I C R O W A V E ^ 7 " ^ SD 1080-2 ! THOMSON-CSF COMPONENTS CORPORATION ; MontgomeryviHe, PA.18936» {215 362-8500" TWX 510-661-7299 : \ , '• v- 7.5 VOLT VHF C O M M U N IC A T IO N S T RA N SIST O R

VK200 INDUCTOR

Abstract: MRF164 gogo board MRF164W inductor vk200 vk200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F164W The RF TMOS Line P o w er Field E ffe c t Transistor Motorola Preferred Devices N-Channel Enhancement Mode Designed primarily for wideband large-signal output and driver stages to 500 MHz. • Guaranteed Performance at 400 MHz, 28 Vdc

j130 fet

Abstract: MRF27SG
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

inductor vk200

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MOTOROLA LINEAR HF

Abstract: MRF175LV Nippon capacitors MRF175
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

UNELCO

Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

VK200 20/4B inductor

Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

inductor vk200

Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

neosid* 10k

Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

planar transformer theory

Abstract: MRF275G equivalent "100 6W" MRF275G RF transformer turn ratio FERROXCUBE VK200 AN211A VK200 RF TOROIDS Design Considerations Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz

MRF240

Abstract: VK200 inductor of high frequencies choke vk200 VK200 4B inductor inductor vk200 VK200 INDUCTOR 2204B VK200 allen bradley 150
Contextual Info: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment.