VITESSE GATE ARRAY Search Results

d 2331

Abstract: half adder ic number of half adder ic with full specification vts 7070
Contextual Info: VITESSE SEMICONDUCTOR MflE D VITESSE FEATURES • Superior performance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3 ,1 .5 mm wire - TTL/CM O S inputs/outputs to support up to

Contextual Info: PRELIMINARY VITESSE VSC10000 High Performance 10000 Gate Array SEMICONDUCTOR CORPORATION Features >VLSI GaAs Gate Array • High Performance Characteristics - 13,376 2 input NOR gates in the internal array - Cell architecture is optimized for up to 1100 high drive buffered D-type flip-flops

OA41

Abstract: LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER
Contextual Info: VITESSE FX Family Data Sheet High Performance FX Family Gate Arrays Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW

HLP5

Abstract: full adder using x-OR and NAND gate OAI221 OA41 G5108
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Data Sheet High Performance SCFUDCFL Gate Arrays SCFX Family Features • Tailored Specifically for High Performance Telecommunications and Data Communica­ tions Applications. 2.5 GHz Performance. Phase-Locked Loop Megacells Available:

ring oscillator

Abstract: VSC1500TC dc to ac Inverter evaluation board Semiconductor ring structure
Contextual Info: VITESSE SEMICONDUCTOR 30E J> • =1502331 GüüGaôô h « V T S VSC1500TC High Speed GaAs 1500 Gate Structured Cell Array Test Chip Introduction The VSC1500TC is a test chip personaliza­ tion of the VSC1500 high speed GaAs Gate Array. This chip is packaged in a ceramic 52

Contextual Info: VITESSE VSC3K/V5C5K/VSC1 OK/ VSG15K/VSC30K High Performance FURY Family Gate Arrays FEATURES • Up to 30,500 Equivalent Gates, Channeled Architecture • Mil-Std-883C, Level B Screening and Qualification Available • ECL and TTL Signal Levels • Commercial, Industrial, Military and

Contextual Info: * te - PRELIMINARY DATA SHEET VITESSE VIPER Fam ily High Performance, Low Cost GaAs Gate Arrays SEMICONDUCTOR CORPORATION Features • Superior S peed/Pow er Perform ance and Com parable in Cost to BiCM OS Solutions 3 Arrays Sizes: 1,5K, 7K, and 13K Usable

Contextual Info: VITESSE FEATURES • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)

Contextual Info: DATA SHEET VITESSE FX-M Family High Performance Gate Arrays for Military Applications SEMICONDUCTOR CORPORATION Features • Superior Perform ance: High Speed and Low Pow er Dissipation 5 Arrays from 20K to 35 0 K Gates • Mature, Rad iation Hard, G aA s E nhancem ent/

XN2222

Abstract: OA2222L teradyne lasar GLX120K GLX80K 800MHZ GLX15K GLX220K GLX40K ecl nand Logic Family Specifications
Contextual Info: VITESSE Preliminary Data Sheet GLX Family High Performance Low Power GaAs Gate Arrays Features • Sea-of-Gates Core • Low-Power Macros Available • Five Array Sizes: 15K, 40K, 80K, 120K and 220K Raw Gates • Standard TTL, LVTTL, ECL, LVPECL, GTL, HSTL and LVDS I/O Compatibility

Contextual Info: ‘ lira % i 1992 DATA SHEET VITESSE SEMICONDUCTOR CORPORATION FX-M Family High Performance Gate Arrays for M ilitary Applications Features • Superior Perform ance: High Speed and Low Power Dissipation • Mature, Rad iation Hard, G aA s Enhancem ent/ Depletion M E S F E T Process

Contextual Info: VITESSE VG FX20K /V 6FX 40K /V G FX 1O O K / VG FX 200K /V G FX 350K H igh Performance FX Family Gate Arrays FEATURES • Superior performance: High speed and low power dissipation • Embedded custom functions and megacell options available • Channelless array architecture

Contextual Info: DATA SHEET VITESSE FX~MFam ily " " “ SEMICONDUCTOR CORPORATION H igh P erform ance G ate Arrays for M ilitary Applications Features • Superior Performance: High Speed and Low Power Dissipation • Mature, Rad iation Hard, GaAs Enhancement/ Depletion M ESFET Process

G52020-0

Abstract: VSC10000
Contextual Info: PRELIMINARY I H T ÏJ Q Ir VSC10000 mm High Performance SEMICONDUCTOR CORPORATION j 0 0 () A fm y Features • High Performance Characteristics VLSI GaAs Gate Array - D flip-flop; Clk to Q: 480 ps, toggle rate > 1GHz; Clk to Q = 588 ps, worst case (F.O. = 3 ,1 .5mm wire)

on222 transistor

Contextual Info: SEMICONDUCTOR CORPORATION Data Sheet High Performance FX Family Gate Arrays FX Family Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW

Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Data Sheet High Performance SLX Family Low Power GaAs Standard Cell Arrays Features • Standard Cell Core • Low-Power Macros Available • Five Array Sizes: 10K, 26K, 48K, 72K and 110K Usable Gates • Standard TTL, LVTTL, ECL, LVPECL, GTL,

OA2222L

Abstract: XN2222 025x
Contextual Info: SEMICONDUCTOR CORPORATION Data Sheet High Performance GLX Family Low Power GaAs Gate Arrays Features • Sea-of-Gates Core Low-Power Macros Available • Five Array Sizes: 15K, 40K, 80K, 120K and 220K Raw Gates Standard TTL, LVTTL, ECL, LVPECL, GTL, HSTL and LVDS I/O Compatibility

A2N transistor

Contextual Info: VSC1500 VI T E SS E S E M I C O N D U C T O R 30E D • R502331 00DQ27R S HIVTS VSC1500 High Speed GaAs - 1500 Gate Structured Cell Array T - y z - ib fo Features • Superior Performance: Supports clock rates up to 1.5 GHz in Mux/Demux applications • Proven GaAs E/D MESFET Process

LT1038

Contextual Info: High Performance 2400 Gate TTL Compatible GaAs Gate Array FEATURES • Superiorperformance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3,1 .5 mm wire - TTL/CMOS inputs/outputs to support up to

Contextual Info: - Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)

Contextual Info: VIT E SS E S E M I C O N D U C T O R 3QE D • =1502331 0 0 0 0 5 7 2 2 « V T S r ^ 2 -J /~ Ÿ Û Features Architecture • Superior Performance: High Speed, High Density, Very Low Pow er Dissipation • Proven G aA s E /D M E S F E T Process • Array Perform ance

ECL IC NAND

Contextual Info: 7 « 19 DATA SHEET FX Family High Performance Gate Arrays SEMICONDUCTOR CORPORATION Features • 5 A rra y s fro m 2 0 K to 3 5 0 K G a te s • C lo c k D is trib u tio n S c h e m e fo r • S u p e rio r P e rfo rm a n c e : H igh S p e e d an d L o w P o w e r D is s ip a tio n

A2N transistor

Abstract: FZJ 165 VSC1520 VSC1500TC s92 FET trace inverter schematic VSC1500 transistor ZA 16
Contextual Info: Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1, 0,5 mm wire) - Typical gate delay (low power section):

Contextual Info: VITESSE VSC3K/VSC5K/VSC1OK/VSC15 K / VSC20K8R/VSC30K High Performance FURY Series G a te Arrays FEATURES • Superior performance: High speed/low power • High density channelled architecture up to 100% utilization • Proven 0.8(1 H-GaAs E/D M ESFET process