FX20K Search Results

FX20KMJ-2

Abstract: 8025A
Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2

Contextual Info: FX20K120 . FX20K150 FX20K120 . FX20K150 Protectifiers – LowVF-Rectifier with Overvoltage Protection Protectifiers® – LowVF-Gleichrichter mit Überspannungs-Schutz Version 2013-02-01 Nominal current Nennstrom Stand off voltage Sperrspannung ±0.1

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20KMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-2 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE •V dss .-1 0 0 V • rDS ON (MAX) . 0.26Í2

OT 306

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20KMJ-06 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-06 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE • V d s s .-60V • rDS ON (MAX) .97 m i2

FX20KMJ-3

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2

FX20KMJ-06

Contextual Info: FX20KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1442-0200 Previous: MEJ02G0275-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 60 V rDS(ON) (max) : 97 mΩ ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 50 ns

FX20KMJ-03-A8

Abstract: FX20KMJ-03
Contextual Info: FX20KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0259-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 0.13 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns

FX20KMJ-3

Contextual Info: FX20KMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1444-0200 Previous: MEJ02G0289-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 0.29 Ω ID : –20 A Integrated Fast Recovery Diode (TYP.) : 100 ns

8025A

Abstract: FX20KMJ-06
Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2

FX20KMJ-3

Contextual Info: FX20KMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1444-0200 Previous: MEJ02G0289-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 0.29 Ω ID : –20 A Integrated Fast Recovery Diode (TYP.) : 100 ns

FX20K120

Contextual Info: FX20K120 . FX20K150 FX20K120 . FX20K150 Protectifiers – LowVF-Rectifier with Overvoltage Protection Protectifiers® – LowVF-Gleichrichter mit Überspannungs-Schutz Version 2012-05-02 Nominal current Nennstrom Stand off voltage Sperrspannung ±0.1

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20KMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • 4V DRIVE • V d s s .-150V • rDS ON (MAX) . 0.29Í2

FX20KMJ-03

Abstract: FX20KMJ-03-A8
Contextual Info: FX20KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0259-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 0.13 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns

Contextual Info: FX20KMJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1443-0200 Previous: MEJ02G0282-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 100 V rDS(ON) (max) : 0.26 Ω ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 100 ns

FX20KMJ-2

Contextual Info: FX20KMJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1443-0200 Previous: MEJ02G0282-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 100 V rDS(ON) (max) : 0.26 Ω ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 100 ns

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20KMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-03 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE • V d s s .-30V • rDS ON (MAX) . 0.130

JESD22-A114

Contextual Info: FX20K120 FX20K120 Protectifiers – LowVF-Rectifier with Overvoltage Protection Protectifiers® – LowVF-Gleichrichter mit Überspannungs-Schutz Version 2010-06-23 ±0.1 20 A Stand off voltage Sperrspannung 120 V Plastic case Kunststoffgehäuse 7.5±0.1

FX20KMJ-03

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-03 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FX20KMJ-2

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

FX50SM-2

Abstract: FX20KM-06 FX50VS06 FX6AS-06 fx6um-06 FX30KM06 marking Td FX3AS-06 FX6KM-06
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET Low Voltage Trench Gate - 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device V qss •d VGSS Number (V)

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid