VSC1500 Search Results

A2N transistor

Contextual Info: VSC1500 VI T E SS E S E M I C O N D U C T O R 30E D • R502331 00DQ27R S HIVTS VSC1500 High Speed GaAs - 1500 Gate Structured Cell Array T - y z - ib fo Features • Superior Performance: Supports clock rates up to 1.5 GHz in Mux/Demux applications • Proven GaAs E/D MESFET Process

ring oscillator

Abstract: VSC1500TC dc to ac Inverter evaluation board Semiconductor ring structure
Contextual Info: VITESSE SEMICONDUCTOR 30E J> • =1502331 GüüGaôô h « V T S VSC1500TC High Speed GaAs 1500 Gate Structured Cell Array Test Chip Introduction The VSC1500TC is a test chip personaliza­ tion of the VSC1500 high speed GaAs Gate Array. This chip is packaged in a ceramic 52

pin diagram of ic ha 741

Abstract: of ttl 741 ic
Contextual Info: PRELIMINARY DA TA SHEET VSL4480 VITESSE High Performance Clock Distribution Chip SEMICONDUCTOR CORPORATION Features VOH = 4V, Compatible with popular pPu • Up to 80 MHz Performance Outputs Can Drive up to 120 pF Loads • Single +5V Power Supply 1Typical Power Dissipation: 1 Watt

A2N transistor

Abstract: FZJ 165 VSC1520 VSC1500TC s92 FET trace inverter schematic VSC1500 transistor ZA 16
Contextual Info: Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1, 0,5 mm wire) - Typical gate delay (low power section):

Contextual Info: - Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)

Contextual Info: VITESSE FEATURES • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)