VISHAY DIODE MARKING S6 Search Results

ph 4148 zener diode

Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

74398

Abstract: Si1972DH Si1972DH-T1-E3 061c "MARKING CODE G2"
Contextual Info: Si1972DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS 0.91 nC SOT-363 SC-70 (6-LEADS)

Si1488DH

Contextual Info: Si1488DH Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.049 at VGS = 4.5 V 6.1a 0.056 at VGS = 2.5 V 5.7 0.065 at VGS = 1.8 V • TrenchFET Power MOSFET • 100 % Rg & UIS Tested Qg (Typ)

Si1470DH

Abstract: Si1470DH-T1-E3 Si1470
Contextual Info: Si1470DH Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.066 at VGS = 4.5 V 4.0a 0.095 at VGS = 2.5 V 4.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 4.85 RoHS APPLICATIONS

Si3437DV

Abstract: SI3437 SI3437DV-T1-E3 S-62238
Contextual Info: Si3437DV Vishay Siliconix New Product P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 rDS(on) (Ω) ID (A)a 0.75 at VGS = - 10 V - 1.4 0.79 at VGS = - 6 V - 1.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 8 nC

74285

Abstract: SC-89 SI1073X
Contextual Info: Si1073X Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 3.25 RoHS

Contextual Info: Si3451DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.8 0.205 at VGS = - 2.5 V - 2.1 • TrenchFET Power MOSFET • PWM Optimized • 100 % Rg tested Qg (Typ)

"marking code D2"

Abstract: 74343 Si1970DH Si1970DH-T1-E3
Contextual Info: Si1970DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.225 at VGS = 4.5 V 1.3a 0.345 at VGS = 2.5 V 1.3a • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 1.15 nC SOT-363 SC-70 (6-LEADS)

74275

Abstract: Si1450DH S6207
Contextual Info: Si1450DH Vishay Siliconix New Product N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A)a 0.047 at VGS = 4.5 V 4.0a 0.051 at VGS = 2.5 V 4.0a 0.058 at VGS = 1.8 V 4.0 a 4.0 a 0.069 at VGS = 1.5 V • TrenchFET Power MOSFET: 1.5 V Rated

SOT-363 marking CF

Abstract: si1988 SI1988DH 62109 74296
Contextual Info: Si1988DH Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.168 at VGS = 4.5 V 1.3a 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V a 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS

S6046

Contextual Info: Si3446ADV Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES rDS(on) (Ω) ID (A)a 0.037 at VGS = 4.5 V 6 0.065 at VGS = 2.5V 6 Qg (Typ) • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package

A8055

Contextual Info: Si3951DV Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.7 0.205 at VGS = - 2.5 V - 2.0 • TrenchFET Power MOSFET • PWM Optimized • 100 % Rg tested Qg (Typ)

Si1050X

Abstract: SC-89 61-287
Contextual Info: Si1050X Vishay Siliconix New Product N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 • TrenchFET Power MOSFET • 100 % Rg Tested

74249

Abstract: P-Channel 200V MOSFET TSOP6 Si3475DV
Contextual Info: Si3475DV Vishay Siliconix New Product P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 8 nC RoHS

SC-89

Abstract: Si1072X S-61291
Contextual Info: Si1072X Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.093 at VGS = 10 V 1.3a 0.129 at VGS = 4.5 V 1.2 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 5.41 RoHS APPLICATIONS

Si1056X

Abstract: SC-89
Contextual Info: Si1056X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS

SC-89

Abstract: SI1070X
Contextual Info: Si1070X Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.099 at VGS = 4.5 V 1.2a 0.140 at VGS = 2.5 V 1.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 3.5 RoHS APPLICATIONS

Si1058X

Abstract: SC-89
Contextual Info: Si1058X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.091 at VGS = 4.5 V 1.3a 0.124 at VGS = 2.5 V 1.1 Qg (Typ) 3.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS APPLICATIONS

SI1470DH-T1-E3

Abstract: Si1470DH
Contextual Info: Si1470DH Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.066 at VGS = 4.5 V 4.0a 0.095 at VGS = 2.5 V 4.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 4.85 RoHS APPLICATIONS

SI2351DS

Contextual Info: Si2351DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Power MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 3.0 0.205 at VGS = - 2.5 V - 2.2 Qg (Typ) • PWM Optimized • 100 % Rg tested 3.2 nC

Si1303DL

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free

SC-70-6

Abstract: SiA911DJ SiA911DJ-T1-E3
Contextual Info: SiA911DJ Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.094 at VGS = - 4.5 V - 4.5a 0.131 at VGS = - 2.5 V - 4.5a 0.185 at VGS = - 1.8 V - 4.5a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

SiB411DK

Abstract: SC75 SiB411DK-T1-E3
Contextual Info: SiB411DK Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V - 9a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

74275

Abstract: Si1450DH marking AH sot363
Contextual Info: Si1450DH Vishay Siliconix New Product N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A)a 0.047 at VGS = 4.5 V 4.0a 0.051 at VGS = 2.5 V 4.0a 0.058 at VGS = 1.8 V 4.0 a 4.0 a 0.069 at VGS = 1.5 V • TrenchFET Power MOSFET: 1.5 V Rated