VISHAY APPLICATION NOTE 129 Search Results

SAC387

Abstract: NXR-1400 tamura solder paste SN63 PB37 alpha PowerPAK 1212-8 stencil ekra e5 SAC387 solder MIL-STD-750 method 1037 UP78 SAC-387
Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note 914 "PowerPAK 1212-8", The Proven Automotive Package By Kandarp Pandya INTRODUCTION This application note presents useful information on the PowerPAK 1212-8 to facilitate SQE and design engineers. Vishay introduced the PowerPAK power MOSFET package

vcnl4000 App

Contextual Info: VISHAY SEMICONDUCTORS Optoelectronics Application Note Designing VCNL4000 into an Application INTRODUCTION The VCNL4000 is a proximity sensor with an integrated ambient light sensor. It is the industry’s first optical sensor to combine an infrared emitter, PIN photodiode, ambient

proximity sensor interfacing with microcontroller

Abstract: VCNL4000 analog output Ambient light sensor proximity card Ambient Light Sensor distance measurement using ir mm ir proximity sensor circuit diagram light sensor VCNL4 infrared human motion detection sensor
Contextual Info: VISHAY SEMICONDUCTORS Optoelectronics Application Note Designing VCNL4000 into an Application INTRODUCTION The VCNL4000 is a proximity sensor with an integrated ambient light sensor. It is the industry’s first optical sensor to combine an infrared emitter, PIN photodiode, ambient

SFERNICE RW

Abstract: SFERNICE RW 16
Contextual Info: VISHAY SFER NICE Resistive Products Application Note Fixed Wirewound Enamelled High Dissipation Resistors GROUP ASSEMBLY HORIZONTAL ASSEMBLY It is recommended that resistors should be installed with a distance between centres of approximately twice their diameter to aid dissipation efficiency.

Contextual Info: Definitions VISHAY Vishay Dale Inductor and Magnetic Product Terminology IN T R O D U C T IO N The scope of this application note is to define the terminology associated with inductors and their applications. Some of these terms are listed in the component data sheets. Many terms go beyond the specification of inductors. These terms describe

IHLP-3232DZ-5A

Abstract: IHLP-3232CZ-11 IHTH-1125KZ-5A IHLP-3232CZ-01
Contextual Info: VISHAY DALE www.vishay.com Magnetics Application Note IHLP Selection Example IHLP-1616 APPLICATIONS L0 H DCR  IHEAT TYP. A ISAT (A) RTH (1) PHEAT (2) ET100 (3) K0 (4) (W) K1 (5) DCR  IHEAT TYP. (A) ISAT (A) IHLP-1616AB-01 RTH (1) PHEAT (2) ET100 (3) K0 (4)

lm2564

Abstract: LM256 LM5642 SOT 23 marked R25 AN-1292 Si4840DY Si4850EY vishay resistor 220k sanyo capacitor SPDT FETs
Contextual Info: National Semiconductor Application Note 1292 Chris Richardson September 2003 Introduction ON/SS1 and ON/SS2 pins must also be connected using a 0Ω resistor in the position J2. One of the two SPDT switches S1 and S2 should be left ‘ON’ and the other used to turn the

lm2564

Contextual Info: User's Guide SNVA070B – May 2004 – Revised April 2013 AN-1292 LM5642 Evaluation Board 1 Introduction The LM5642 IC is a dual channel, current-mode, synchronous buck converter controller. It can handle input voltages of up to 36V and delivers two independent output voltages from 1.23V up to 90% of the

Contextual Info: SPICE Device Model Si4459ADY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1  P16 - Version for professional and industrial applications cermet 1 W at 40 °C  PA16 - Version for professional audio applications (conductive plastic)

Contextual Info: SPICE Device Model Si7102DN www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model Si3410DV www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification

Contextual Info: SPICE Device Model SiA462DJ www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si4168DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR878ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1  P16 - Version for professional and industrial applications cermet 1 W at 40 °C  PA16 - Version for professional audio applications (conductive plastic)

EFB810-3/4-3/Si7145DP

Contextual Info: SPICE Device Model Si7145DP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: UFL200CB60P Vishay High Power Products Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A FEATURES • Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage • Optimized for power conversion: welding and industrial

Contextual Info: SPICE Device Model SiR492DP www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR468DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

PA16

Contextual Info: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1  P16 - Version for professional and industrial applications cermet 1 W at 40 °C  PA16 - Version for professional audio applications (conductive plastic)

Contextual Info: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C