SI2369DS Search Results
SI2369DS Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI2369DS-T1-BE3 | Vishay Siliconix | P-CHANNEL 30-V (D-S) MOSFET | Original | 243.34KB | 10 | ||
| SI2369DS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 7.6A TO-236 | Original | 10 |
SI2369DS Price and Stock
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Vishay Siliconix SI2369DS-T1-GE3MOSFET P-CH 30V 7.6A TO236 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2369DS-T1-GE3 | Digi-Reel | 64,316 | 1 |
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SI2369DS-T1-GE3 | 225,000 | 1 |
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Vishay Siliconix SI2369DS-T1-BE3P-CHANNEL 30-V (D-S) MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2369DS-T1-BE3 | Digi-Reel | 4,206 | 1 |
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Vishay Intertechnologies SI2369DS-T1-BE3P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2369DS-T1-BE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2369DS-T1-BE3 | Reel | 3,000 | 35 Weeks | 3,000 |
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SI2369DS-T1-BE3 | 28,619 |
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SI2369DS-T1-BE3 | 6,000 | 3,000 |
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SI2369DS-T1-BE3 | 6,000 | 35 Weeks | 3,000 |
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SI2369DS-T1-BE3 | Bulk | 6,000 |
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SI2369DS-T1-BE3 | Reel | 57,000 | 3,000 |
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SI2369DS-T1-BE3 | 17 Weeks | 6,000 |
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SI2369DS-T1-BE3 | 36 Weeks | 3,000 |
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Vishay Intertechnologies SI2369DS-T1-GE3Power MOSFET, P Channel, 30 V, 7.6 A, 0.024 ohm, SOT-23, Surface Mount - Product that comes on tape, but is not reeled (Alt: 70AC6498) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2369DS-T1-GE3 | Ammo Pack | 3,000 |
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SI2369DS-T1-GE3 | 39,151 |
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SI2369DS-T1-GE3 | 11,116 | 421 |
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SI2369DS-T1-GE3 | 6,000 | 35 Weeks | 3,000 |
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SI2369DS-T1-GE3 | Reel | 138,000 | 3,000 |
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SI2369DS-T1-GE3 | 1,868 |
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SI2369DS-T1-GE3 | 64 |
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SI2369DS-T1-GE3 | Reel | 15,000 | 3,000 |
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SI2369DS-T1-GE3 | 2,281 | 1 |
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SI2369DS-T1-GE3 | 7,800 |
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SI2369DS-T1-GE3 | 17 Weeks | 6,000 |
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SI2369DS-T1-GE3 | 36 Weeks | 3,000 |
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SI2369DS-T1-GE3 | 100,000 | 1 |
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Vishay BLH SI2369DS-T1-GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2369DS-T1-GE3 | 80 | 9 |
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SI2369DS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
Original |
Si2369DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI2369DSContextual Info: Si2369DS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)a |
Original |
Si2369DS O-236 OT-23) Si2369DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |