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    SI2369DS Search Results

    SI2369DS Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI2369DS-T1-BE3
    		Vishay Siliconix P-CHANNEL 30-V (D-S) MOSFET Original PDF 243.34KB 10
    SI2369DS-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 7.6A TO-236 Original PDF 10
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    SI2369DS Price and Stock

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    Vishay Intertechnologies SI2369DS-T1-GE3

    Power MOSFET, P Channel, 30 V, 7.6 A, 0.024 ohm, SOT-23, Surface Mount - Product that comes on tape, but is not reeled (Alt: 70AC6498)
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    Avnet Americas () SI2369DS-T1-GE3 Ammo Pack 3,000
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    SI2369DS-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics SI2369DS-T1-GE3 178,486
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    Newark () SI2369DS-T1-GE3 Tape & Reel 44,351 100
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    SI2369DS-T1-GE3 Cut Tape 44,351 5
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    SI2369DS-T1-GE3 Tape & Reel 5,938 10
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    SI2369DS-T1-GE3 Cut Tape 5,938 1
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    SI2369DS-T1-GE3 Tape & Reel 6,000
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    SI2369DS-T1-GE3 Tape & Reel 3,000
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    TTI SI2369DS-T1-GE3 Reel 6,000
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    Bristol Electronics () SI2369DS-T1-GE3 1,868
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    SI2369DS-T1-GE3 55 1
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    Quest Components () SI2369DS-T1-GE3 44
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    SI2369DS-T1-GE3 44
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    TME SI2369DS-T1-GE3 24 1
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    Avnet Asia SI2369DS-T1-GE3 54 Weeks 6,000
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    EBV Elektronik SI2369DS-T1-GE3 53 Weeks 3,000
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    Vishay Intertechnologies SI2369DS-T1-BE3

    Power MOSFET, P Channel, 30 V, 7.6 A, 29 MilliOhms, TO-236 (SOT-23), 3 Pins, Surface Mount - Tape and Reel (Alt: SI2369DS-T1-BE3)
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    Avnet Americas SI2369DS-T1-BE3 Tape & Reel 52 Weeks 6,000
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    Mouser Electronics SI2369DS-T1-BE3 16,119
    • 1 $0.85
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    TTI SI2369DS-T1-BE3 Reel 9,000 3,000
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    TME SI2369DS-T1-BE3 6,000
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    Avnet Asia SI2369DS-T1-BE3 54 Weeks 6,000
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    EBV Elektronik SI2369DS-T1-BE3 53 Weeks 3,000
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    Vishay Huntington SI2369DS-T1-GE3

    MOSFET P-CH 30V 7.6A TO-236
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    Win Source Electronics SI2369DS-T1-GE3 54,000
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    SI2369DS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		si2369ds2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    SI2369DS

    Contextual Info: Si2369DS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)a


    Original     		si2369dso-236ot-23si2369ds-t1-ge3+32002/95/ec2011/65/eujs709a PDF