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    SI2369DS Search Results

    SI2369DS Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI2369DS-T1-BE3
    		Vishay Siliconix P-CHANNEL 30-V (D-S) MOSFET Original PDF 243.34KB 10
    SI2369DS-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 7.6A TO-236 Original PDF 10
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    Vishay Intertechnologies SI2369DS-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET
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    Vishay Intertechnologies SI2369DS-T1-GE3

    MOSFET P-CH 30V 7.6A TO236
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    Vishay BLH SI2369DS-T1-GE3

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    Bristol Electronics SI2369DS-T1-GE3 80 9
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    Vishay Huntington SI2369DS-T1-GE3

    MOSFET P-CH 30V 7.6A TO-236
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    Win Source Electronics SI2369DS-T1-GE3 42,000
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    SI2369DS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si2369DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI2369DS

    Contextual Info: Si2369DS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)a


    Original     		Si2369DS O-236 OT-23) Si2369DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF