VGS 40V MOSFET Search Results

MDD1751

Abstract: 60V 60A TO-252 N-CHANNEL 40V 60A MOSFET
Contextual Info: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 60A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in

MDE1751

Abstract: trench mosfet
Contextual Info: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ General Description Features The MDE1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in

6903

Abstract: MDE1751
Contextual Info: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ Features General Description VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V The MDE1751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in

Contextual Info: DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION NEW PRODUCT Device RDS on max V(BR)DSS Q2 40V Q1 -40V Features and Benefits 24m @ VGS = 10V 32m @ VGS = 4.5V 45m @ VGS = -10V 55m @ VGS = -4.5V ID TA = +25°C

Contextual Info: DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION NEW PRODUCT Device RDS on max V(BR)DSS Q2 40V Q1 -40V Features and Benefits 24mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 45mΩ @ VGS = -10V 55mΩ @ VGS = -4.5V ID TA = +25°C

MDI1752

Abstract: 40V50A 40V, 50A n mosfet 82269
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

MDF1752

Abstract: 220F
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

MDE1752

Abstract: MDE1752R
Contextual Info: N-Channel Trench MOSFET 40V, 66A,8.0mΩ General Description Features The MDE1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

MDD1752

Abstract: MDD*1752 trench mosfet MDD1752R MAGNACHIP
Contextual Info: N-Channel Trench MOSFET 40V, 50A,8.0mΩ General Description Features The MDD1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

MDS5753ERH

Contextual Info: Dual N-Channel Trench MOSFET, 40V, 6.3A, 27mΩ Features General Description VDS = 40V ID = 6.3A @VGS = 10V RDS ON < 27mΩ @VGS = 10V < 35mΩ @ VGS = 4.5V The MDS5753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high

mdd9754

Abstract: N-P Channel mosfet MDD-9754
Contextual Info: MDD9754 Product Flyer MagnaChip Imaging Solutions Division Dual Enhancement N-P Channel Trench MOSFET Key Features N-Channel ƒ VDS = 40V ƒ ID=16A VGS=10V ƒ RDS(ON) <27mΩ @ VGS = 10V <35mΩ @ VGS = 4.5V p-channel ƒ VDS = -40V ƒ ID=-12.7A(VGS=10V) ƒ RDS(ON)

MDS1753

Abstract: 6903
Contextual Info: N-Channel Trench MOSFET, 40V, 7.9A, 27mΩ Features General Description VDS = 40V ID = 7.9A @VGS = 10V RDS ON < 27mΩ @VGS = 10V < 35mΩ @ VGS = 4.5V The MDS1753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability

MDF3752

Abstract: MDF3752TH mosfet low vgs
Contextual Info: P-Channel Trench MOSFET, -40V, -36.5A, 17mΩ Features General Description VDS = -40V ID = -36.5A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDF3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.

MDE1752

Abstract: MDE1752RH
Contextual Info: N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description Features VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability

mdd3752

Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
Contextual Info: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.

MDD3754

Abstract: MDD375 MDD*3754 P-channel Trench MOSFET MDD3754RH 6000P 82269 MDD37
Contextual Info: P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ Features General Description VDS = -40V ID = -24.4A @VGS = -10V RDS ON < 43mΩ @ VGS = -10V < 58mΩ @ VGS = -4.5V The MDD3754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.

APM4048

Abstract: APM4048A APM4048AD APM4048ADU4 2l TRANSISTOR SMD MARKING CODE APM4048ADU STD-020C
Contextual Info: APM4048ADU4 Dual Enhancement Mode MOSFET N-and P-Channel Features Pin Description D1 D2 • N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, RDS(ON)=37mΩ (typ.) @ VGS= -10V S1 G1 RDS(ON)=49mΩ (typ.) @ VGS=-4.5V

APM4048D

Abstract: apm*4048D APM4048DU4
Contextual Info: APM4048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description D1 D2 N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, RDS(ON)=37mΩ (typ.) @ VGS= -10V S1 G1 RDS(ON)=49mΩ (typ.) @ VGS=-4.5V

MDF1752TH

Abstract: MDF1752 40V50A
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDF1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability

APM4568

Abstract: APM4568A APM4568AK N-Channel vgs 40V MOSFET pch 1275
Contextual Info: APM4568AK Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V

APM4568

Abstract: APM4568J apm*4568 36M0 P-Channel MOSFET code L 1A 40v 7.5a P-Channel N-Channel MS-001 STD-020C 40v 7.5a N- and P-Channel
Contextual Info: APM4568J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/7.5A, RDS(ON) =21mΩ (typ.) @ VGS = 10V RDS(ON) =30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -40V/-6A, RDS(ON) =36mΩ (typ.) @ VGS =-10V

APM4568

Abstract: apm*4568 APM4568K STD-020C
Contextual Info: APM4568K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V

MDS1754

Abstract: trench mosfet mosfet low vgs
Contextual Info: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ Features General Description VDS = 40V ID = 7.6 VGS = 10V RDS(ON) < 29mΩ @VGS = 10V < 37mΩ @ VGS = 4.5V The MDS1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability.

MDS5751

Abstract: MDS5751RH MagnaChip Semiconductor N-Channel 40V MOSFET 82269
Contextual Info: Dual N-Channel Trench MOSFET, 40V, 5.8A, 31mΩ General Description Features VDS = 40V ID = 5.8A @ VGS =10V RDS ON <31mΩ @ VGS = 10V <45mΩ @ VGS = 4.5V The MDS5751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability