SGS-Thomson mosfet ipak
Contextual Info: f » • * /# SGS-THOMSON M<eœiliOTI!»!]0 § VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VND5N07-1 V NP5N 07FI VNK5N07FM Velamp 70 70 70 70 V V V V Ros ony 0.2 n 0.2 i i 0.2 n 0.2 a llim 5 5 5 5 A A A A
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vnd5n07/vnd5n07-1vnp5n07fi/k5n07fmvnd5n07vnd5n07-1+3vnk5n07fmvnp5n07fisgs-thomson mosfet ipak
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SGS-Thomson mosfet
Contextual Info: H Z! SGS-THOMSON ESII lS@IILICTi B!lllGi VNH100N04 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE Velamp RoS on him VN H 100N 04 42 V 0 .0 1 2 n 100 A . • ■ . ■ . ■ . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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vnh100n04o-218sgs-thomson mosfet |
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35N07
Abstract: diode 1ss VNP35N VNV35N07
Contextual Info: £mm I O T H O M IQ H m tim W Hïïm m cs VNP35N07FI VNB35N07/VNV35N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP35N 07FI V N B 35N 07 VN V35N 07 Velamp RDS on him 70 V 70 V 70 V 0 .0 2 8 Î2 0 .0 2 8 n 0 .028 n 35 A 35 A 35 A • ■ . ■
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vnp35n07fivnb35n07/vnv35n07vnp35nvnb35n07+4vnv35n071996sgs-thomson35n07diode 1ss
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VNF35N07
Abstract: VNP35N07
Contextual Info: i ~ t o r m m w ir c iw RfflD E § ILiCTia@ilOei VNP35N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP35N07 . . • . . . . . . . Velamp RDS(on) him 70 V 0.028 £2 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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vnp35n07o-220vnf35n07 |
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BUW90
Abstract: LE17
Contextual Info: JUL 0 6 1988 i 37E D SEMELAB LTD • Ô1331fi7 QQOOSDb G SEMELAB BUW90 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation MECHANICAL DATA Dimensions in mm FEATURES
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000020bbuw90100cc10ctc+20-25mhle17
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VELAMP
Abstract: BUF642
Contextual Info: Te m ic BUF642 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le-sW itch-O ff T ransistor SW O T • HIGH SPEED technology • Planarpassivation • 100 kH z sw itching rate • Very low sw itching losses •
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buf642velamp |
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BUW91
Abstract: 0DG02 LE17
Contextual Info: SENELAB LTD 3 7E J UL 0 6 1988 A1331A7 D 5EMELAB BUW 91 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation M EC H A N IC A L DATA Dim ensionsin mm FEATURES • LOW VCE SAT
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0dg020buw91curre27f1003c+3300ns0dg02le17
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g 13003
Abstract: LM 13003
Contextual Info: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa
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t/13003sgs13002sgs13003ot-82+6sgs13002tsgs13003tmje13002o-126g 13003lm 13003
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LS400
Abstract: bu931t
Contextual Info: Hji BU931T BUB931T SGS-THOMSON EfóDO E^@H[LO HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPOLAR TECHNOLOGY . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES . SURFACE-MOUNTING D2PAK TO-263 POWER PACKAGE IN TUBE (NO SUFFIX)
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bu931tbub931to-263o-220+2bu931t/bub931tls400
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