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    HN1C03F

    Abstract: TOSHIBA 2803
    Contextual Info: TOSHIBA HN1C03F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03F Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. + 0.2 • • • 2.8-0.3 Including Two Devices in SM6 (Super Mini Type with 6 leads) High Emitter-Base Voltage : VEBO-25V (Min.)


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    hn1c03ftoshiba 2803 PDF