VDS40 Search Results

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: Advanced Power MOSFET S F W /I9 6 1 0 FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VOS= -200V

J112

Abstract: Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na"
Contextual Info: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS [VHC3RO ELECTRONICS Jill, J112, J113 are N-channel silicon , junction field effect transistors designed for analog switching, choppers and commutators applications. TO-92 ABSOLUTE MAXIMUM RATINGS -35 V 50mA

J113

Abstract: J112 Field Effect Transistors j112 ltd J111 VDS40 "igss 1 na"
Contextual Info: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS TO-92 Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and commutators applications. ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage