VCEO 80V IC 1A Search Results

NPN transistor 2sd1863

Abstract: 80V 1A NPN Transistor 2SB1260 2SD1733 2SD1768S 2SD1898 2SB1181 2SD1863 Vceo 80V Ic 1A 2SB1241
Contextual Info: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)

80V 1A NPN Transistor

Abstract: 2SD1898 2SD1768S NPN transistor 2sd1863 2SD1768 2SD1863 2SB1181 2SD1733 2SB1241 2SB1260
Contextual Info: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type

2SD1898

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 1.5 ±0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity

2SB1181

Abstract: 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 zDimensions (Unit : mm) 2SD1898 +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 zFeatures 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity

2SD1898

Abstract: 2SD1768 2SB1181 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 SC-72 DASF002499
Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity

Contextual Info: IC SMD Type Product specification 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A DC . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO

VCEO80V

Abstract: FMMT620 FMMT620TA FMMT620TC
Contextual Info: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users

FMMT620

Abstract: 450-170 FMMT620TA FMMT620TC PD6255 DSA003701
Contextual Info: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users

Vceo 80V Ic 0.5A

Abstract: 2SD1898 MARKING SMD TRANSISTOR P 2sd1898 smd SMD TRANSISTOR transistor smd marking smd transistor
Contextual Info: Transistors SMD Type Power Transistor 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A DC . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage

transistor b54

Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
Contextual Info: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)

Contextual Info: 2SCR544P Data Sheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A MPT3 Base Collector Emitter 2SCR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544P 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=1A/50mA)

Contextual Info: 2SB1260 / 2SB1181 Datasheet PNP -1.0A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.0A MPT3 Collector CPT3 Base Collector Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE sat)

Contextual Info: Transistors SMD Type Product specification 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

NPN Transistor VCEO 80V 100V

Abstract: 2SD1733 NPN Transistor VCEO 80V 100V hfe 100
Contextual Info: Transistors SMD Type Power Transistor 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTN620MA ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package

Contextual Info: 2SAR544P Data Sheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Base Collector Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P 3) Low VCE(sat)

Contextual Info: 2SAR544R Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A TSMT3 Collector Base Emitter 2SAR544R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)

Contextual Info: 2SCR544P / 2SCR544D Datasheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SCR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544P / 2SAR544D

Contextual Info: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D

Contextual Info: 2SCR544R Datasheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A TSMT3 Collector Base Emitter 2SCR544R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)

Contextual Info: 2SAR544P 2SAR544PFRA Data Sheet PNP -2.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Base Collector Emitter 2SAR544PFRA 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544PFRA