VCE25 Search Results

sfh309

Abstract: siemens la4 450 926AA
Contextual Info: SIEMENS SFH309 DAYLIGHT FILTER SFH309F SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm Surface not ftal 031 (0 6) 016(0 4) .204 (5 2) .177 (4.5) .157 (4.0) .141 (3.6) ,161 (4 11 153(39) .A .100 (2.54) 122(3.1) 0114(2.9) T I— ° _071 (1.6) 138 (3.5)

MA3232

Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor a640

Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

lc3664* sanyo

Abstract: LC3664BML-10 LC3664BL LC3664BL-12 LC3664BL-70 LC3664BL-85 LC3664BML-12 LC3664BML-70 LC3664BML-85 tca270
Contextual Info: SANYO SEMICONDUCTOR CORP b3E J> 7Tì7D7b 00123bb 37T « T S A J O rdering nu m ber : E N 4326I Asynchronous Silicon Gate C M O S LSI LC3664BL, BM L-70/85/10/12 64 K 8192 words x 8 bits SRAM Overview Package Dimensions The L C 3 6 6 4 B L , B M L -7 0 /8 5 /1 0 /1 2 are fu lly

Contextual Info: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage

Contextual Info: APT15GT60KR A dvanced P ow er Te c h n o lo g y 600V 30A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

Contextual Info: Preliminary Data Sheet No. PD-9.939 International 1 ]Rectifier IRGKI0100M12 Fast IGBT "CHOPPER" INT-A-PAK™ MODULES VCE= 1200V *C DC “ 100A • Rugged Design • Simple gate-drive . Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"

itt ol 170

Abstract: ITT DIODE 125 diode 1000v 50a
Contextual Info: Preliminary Data Sheet No. P D -9.935 International Rectifier i l l ] ir g k i o o "CHOPPER" INT-A-PAK MODULES 5o m i2 Fast™ IGBT • Rugged Design •Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant •Switching-Loss Rating includes all "tail"

8012-TCZT

Abstract: IP551 TCZT8013
Contextual Info: TELEFUNKEN ELECTRONIC I ÛSeüG^b 0DQ7Ô7S T H A L 6G TCZT 8012 -TCZT 8013 iM electronic Creative Technologies Matchable Pairs - Emitter and Detector Emitter: Detector: Applications: ~ — r 'y / 7 / GaAs IR Emitting Diode Silicon NPN Epitaxial Planar Phototransistor

transistor BF 502

Abstract: 502 TJ
Contextual Info: — SEMELAB PLC bOE D = p r= “ ill“ • 8133187 / /N^ i^ -P ack QDD0C1D4 0 2 3 ■ SI1LB MOS POWER BFNk| 4 IG B T T 3 V i \ SEME LAB_ SML200G100BFN 1000V 200A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

DIODE SJ 98

Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor A431

Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12

acrian RF POWER TRANSISTOR

Abstract: VTV-075-2 F627-8Q1 VTV150 F627-8 VTV075 VTV-075 VTV-075-3 VTV-075-4 acrian inc
Contextual Info: GENERAL V I v - u / o 7.5 WATTS • 2$ VOLTS 175-225 MHz VHF - TV LINEAR DESCRIPTION The VTV-075 is a silicon NPN transistor designed for linear broadcast applications. It has been designed for high efficiency, 3high linearity, Class A operation in VHF Band III

transistor A431

Abstract: CA3036 a106 transistor A431 transistor d16P4 4JD12X009 A431 BFR14 MA3232 GI3793
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

NS1000 n

Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

ST25C transistor

Abstract: TRANSISTOR st25a TRANSISTOR 2n906 ST25A transistor TRANSISTOR st25c transistor 2N905 2N904 2N906 DIODE SJ 98 ST25A
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

UD1001

Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2sa525

Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

lc3664* sanyo

Contextual Info: SANYO SEMI CONDUCTOR CORP b3E J> O rdering nu m ber : E N 4326I 7Tì7D7b 00123bb 37T « T S A J Asynchronous Silicon Gate C M O S LSI LC 3664B L, B M L -70/85/10/12 64 K 8192 words x 8 bits SRAM Overview Package Dimensions The L C 3 6 6 4 B L , B M L -7 0 /8 5 /1 0 /1 2 are fu lly