VCC600V Search Results

Contextual Info: TOSHIBA MIG75Q202H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG75Q202H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, Realtime-Current-Control (RTC , Under-Voltage & Over-Temperature) in One

IRGKI0025M12

Abstract: mosfet 1200V 25A
Contextual Info: International Rectifier Preliminary Data Sheet No. PD-9.933 ir g k io o 25 m i 2 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT VCE= 1200V W • Rugged Design .Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"

Contextual Info: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

characteristics of zener diode

Abstract: 1DI300ZP-120 zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352
Contextual Info: 1 D 3 I Z P - 1 2 3 A « ± y<r7 - h : Outline Drawings POWER TRANSISTOR MODULE •Features • hFE^^V-' High DC Current Gain • KF*3/K •smmmuimm : Applications • General Purpose Inverter >'<— 9 • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools

f2601

Contextual Info: This material and lhe information herein is he properly of F uji Electric Co.Ltd.They shall be neither reproduced, copied lent, or disclosed in any way whatsoever for (he use of ;iny third portynor usod (or the manufoc turing purposes wiihout the express written consent of F uji Electric Co. Li d

Contextual Info: TOSHIBA MIG75Q201H MIG75Q201H TO SH IBA INTELLIGENT GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W E R SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for

A2118

Abstract: SC-65
Contextual Info: 2SK1081 -01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • L :>w on-resistance • No secondary breakdown • Low driving power • High voltage • V GSs— ±30V Guarantee

a2hb transistor

Abstract: 1000A diode Transistor AC 188 A2HB 20/a2hb transistor
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM 1000H A-2HB HIGH POWER SWITCHING USE INSULATED TYPE | QM1000HA-2HB • Ic Collector current. • V C EX Collector-emitter voltage. • hFE DC current gain. 10 00A 1000V

QM30DY-2H

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE i QM30DY-2H * Ic * V cex * hFE Collector current. 30A Collector-emltter voltage. 1000V DC current gain.75 * Insulated Type

DD-221

Abstract: dioda module
Contextual Info: Preliminary Data S heet No. P D -9.936 International S Rectifier IRGNI0075M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT High Side Switch Chopper V CE= 1 2 0 0 V _ - o 3 I nr - «• 5 . . Rugged Design • Simple gate-drive .Fast operation up to 10 kHz hard switching,

Contextual Info: Preliminary Data Sheet No. PD-9.939 International 1 ]Rectifier IRGKI0100M12 Fast IGBT "CHOPPER" INT-A-PAK™ MODULES VCE= 1200V *C DC “ 100A • Rugged Design • Simple gate-drive . Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"

VPO300

Contextual Info: TOSHIBA MIG150Q101H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG150Q101H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.

Contextual Info: TO SHIBA MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

MIG200Q101H

Abstract: TLP559 295I
Contextual Info: TOSHIBA MIG200Q101H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT M I G 2 0 0 Q 1 01 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.

Contextual Info: f MITSUBISHI TRANSISTOR MODULES j QM400HA-24 ! HIGH POWER SWITCHING USE [ _INSULATED TYPE f QM400HA-24 Collector current. 400A Collector-emitter voltage.1200V • hFE DC current gain.75

QM30DY-H

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-H • 1C • V cex • hFE Collector current. 30A Collector-emitter voltage. 600V DC current gain.75

C2111

Abstract: 300V1
Contextual Info: 1 h.» 31 C í i n I « m i i?1* I r il O 'r ii J' C'n h l r g V i 11 ihf p 'O P t r ly t t |).n C>:;>rii>> Co A i d t i.r ing pur p ô l e * c p n | » n [ ul Fuji Ç l f C i r l c ut Kl 1er II'« i r i i nu 1j £ w i l l l«n I I'l' il P i M y / i O ' WM.'i ij yl

fuji igbt module

Contextual Info: 6-Pack IGBT 1200 V 50 A FUJI IGBT MODULE F series Outline Drawings • Features • Low Saturation Voltage • V o lta g e D rive • V a rie ty o f P ow er C apacity Series ■ A pplications • In ve rte r fo r M o to r D rive • AC and DC Servo Drive Am plifier

2C25A

Contextual Info: Fuji New Semiconductor Products ~ ; u I ¡Nf ^ 1MBC03-120, 1MB03D-120 K J f ^ l G B T Features • If t H * • 7 7 h X < y ? > < 7 lZ j:Z l& X 1 ' y ? > 7 - y — 'y t 1 & S 'r X { t • M ilti, • 8 8 4 7 l i i l i l 7 7 RBSOA, SCSOA 4' E ^ • Small molded package

MG100Q2YS51A

Contextual Info: TOSHIBA TENTATIVE MG100Q2YS51A MG1 0 0 Q 2 Y S 5 1 A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage

1DI300ZN-120

Abstract: T04 transistor B351 transistor
Contextual Info: 1DI300ZN-120 300A ' < T7 ' - Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • hFE*''«v,' High DC Current Gain • e t e c & f f i t t 'f t : A p p lic a tio n s • //Lffl'f —9 General Purpose Inverter • Uninterruptible Power Supply • N C lf N f t M Servo & Spindle Drive for NC Machine Tools

T1EB

Abstract: 125CV 2DI75Z-100 30S3 T930 2di75z100 OA9 diode
Contextual Info: 2DI75Z-100 75a ' U ± y < r7 - ^ 3 . - ) V : Outline Drawings POW ER TRAN SISTO R MODULE F e a tu re s • ffiifiS High Voltage • 7 V— V — K rtj • A S O A '& i' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type : Applications

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K • lc Collector c u rre n t. 100A • V cex C ollector-em itter v o lta g e . 1200V • hFE DC current g a in . 75

QM10

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H • to • V cex • hFE Collector current.100A Collector-emitter voltage. 1000V DC current gain. 75