V3501 Search Results

SRV3503

Contextual Info: TRANSFORMERS 36.0 mox. SM V3501 Mounting Hole Detoil B o tto m View 28.0 S E R IE S CORE SIZE El 35X12 Ae (m m 2) 120.0 Ae ( mm ) 67.3 Ve (m m 3) 8090 Aw (m m 2) 85.7 Power (W) 97 / 2 5 kHz z t = := t = l 11m in in -u CORE SIZE EE 35X10 Ae (m m 2) 100,0

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

Contextual Info: v OBJECTIVE / ^ C A L IF O R N IA MICRO DEVICES PAC V35 ►► ► ►► P/ACTIVE V.35 TERM INATION NETWORK Features Applications • • • • • • • Stable resistor ne tw ork 6 term inations/package Separate ground fo r receive term inations Version fo r receiver in p u t impedance com pensation

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

california micro devices marking

Contextual Info: PAC V.35 CALIFORNIA MICRO DEVICES CALIFORNIA MICRO DEVICES P/ACTIVE V.35 TERMINATION NETWORK Features • Stable resistor network • 6 terminations/package • Separate ground for receive terminations • Version for receiver input impedance compensation • Saves board space and reduces assembly cost

diode S1030

Abstract: cs 6822 MV3501 MV3503 MV3504 MV3505 MV3506 MV3507 0170l V3502
Contextual Info: V3501 SILICON thru MV3507 v v c -N I— V O LT A G E-V A R IA BLE CAPACITANCE DIO DES S ILIC O N EPICAP DIO D ES 6.8-22 pF 30 V O L T S . . . designed in the new low-inductance M ini-L package for highvolume, low-cost frequency control and tuning applications; providing