V2700 Search Results

Contextual Info: V2700-49 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq10G Frequency Min. (Hz)1.0G Frequency Max. (Hz)26G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

ACT1100

Contextual Info: 0044 0 118 979 1238 0044(0)118 979 1283 info@act crystals.com ACT1100 & ACT1700 Standard Dil14 / Dil8 HCMOS SPXO ● Stability: ● Output: ● Frequency: ±10ppm* double package option available. HCMOS/TTL (Universal) 1 ~ 160MHz (HCMOS 50pF) Characteristics

GT-64260B

Abstract: GT-64260 MV64360 Marvell MV64360 MV-S100414-00C gt64260 marvell Marvell GT64260 MVME2700 mvme6100 MVME5500
Contextual Info: MVME Series IPMC712/761 I/O Module Installation and Use VIPMCA/IH3 October 2005 Edition Copyright 1999, 2005 Motorola Inc. All rights reserved. Printed in the United States of America. Trademarks Motorola and the stylized M logo are trademarks registered in the U.S. Patent and Trademark Office.

CXA1790

Contextual Info: SONY CXA1790Q/R Decoder with Built-in 8-bit A/D Description CXA1790Q 64 pin QFP Plastic The CXA1790Q/R is an IC which converts composite video and Y/C separate signals into Y, U (B-Y) and V CXA1790R 64 pin LQFP (Plastic) (R-Y), inputs these signals to built-in 8-bit A/Ds, and

MVME2700

Abstract: MVME761 53C825A MVME761P2-011 MVME2700-1361 MVME761-011 MVME2700-4251A MVME761-001 SCANBE MVME2700-1251A
Contextual Info: Datasheet M V M E 27 0 0 S e r i e s V M E P ro c e s s o r M o d u l es Scalable high-performance VME computing with the flexibility of PMC expansion The MVME2700 series is a family of VME processor modules based on the Motorola PowerPlus VME Architecture with PowerPC architecture microprocessors that push

V2501

Abstract: Virtech Microwave Innowave Microwave detector diodes 18 GHz V1200 V1000 V1100 V2601 v2502 tunnel diodes
Contextual Info: 4Ö02789 Tb INNOWAVE Ì T Ì H&QE7&1 • □ ODGDS'ì 2 l ~ co I 59 ^ D A^ , J DETECTOR DIODES INNOÜJAVE SC H O n K Y BARRIER DIODES PLANAR TUNNEL (BACK DIODES Features: Features: • • • • • Planar Passivated Construction. Choice of Bias Conditions and Offsets.