V03C Search Results

Contextual Info: GENERAL-USE RECTIFIER DIODE V03 FEATURES OUTLINE DRAWING • For general purpose. • Diffused-junction. Glass passivated and encapsulated. ABSOLUTE MAXIMUM RATINGS Item Type V03C V03E V03G V03J Repetitive Peak Reverse Voltage V RRM V 200 400 600 800 Non-Repetitive Peak Reverse Voltage

V03C

Abstract: V03E V03C diode
Contextual Info: GENERAL-USE RECTIFIER DIODE V03 OUTLINE DRAWING V03C 200V V03E (400V) V03G (600V) V03J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.

V03C

Abstract: V03J 1S2063
Contextual Info: GENERAL-USE RECTIFIER DIODE i V03 Unit In mm inch •4* * • OUTLINE DRAWING te tti* M ü Direction of polarity ■FEATURES • For general purpose. • Diffused-junction. G lass passivated and encapsulated. Color of cathode band V03C(200V) Black V03EI400V) Blue

V03C

Abstract: V03J V03E V03G PDE-V03-0 hitachi V03 Hitachi DSA00504 V03C diode diode v03 hitachi
Contextual Info: GENERAL-USE RECTIFIER DIODE V03 OUTLINE DRAWING V03C 200V V03E (400V) V03G (600V) V03J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.

V03C

Abstract: V03J V03G V03E V03C diode
Contextual Info: GENERAL-USE RECTIFIER DIODE V03 OUTLINE DRAWING 29MIN. 1.14 長 62MIN. (2.44) • 一般電源整流用 •拡散接合形ガラスモールド構造 V03C (200V) V03E (400V) V03G (600V) V03J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX

V03E HITACHI

Abstract: V03J V03G PDE-V03-0 V03C V03E hitachi V03 hitachi V03C diode v03 hitachi
Contextual Info: GENERAL-USE RECTIFIER DIODE V03 OUTLINE DRAWING V03C 200V V03E (400V) V03G (600V) V03J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.

V03C

Abstract: V03E V03G V03E HITACHI 1S1948 hitachi V03C V03C diode 1S1949 hitachi V03G
Contextual Info: TYPE V03 I • FEATURES • This diode is designed to serve as universal type optimum for use in a variety of electronic devices including control circuits, communication equipment and household electric appliances. • Compact, lightweight structure with a glass en­

HY62256A

Abstract: hyundai HY62256AJ55
Contextual Info: HY62256A Series • H Y U N D A I 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

I0042

Abstract: HA11
Contextual Info: »HYUNDAI H Y 6 2 8 1 0 0 A -I S e r ie s 128K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

roic

Abstract: ASC ROIC HY62256B 3K06 3k07
Contextual Info: HY62256B Series •HYUNDAI 3 2Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

C1992

Abstract: P4C164 P4C164L
Contextual Info: PERFORMANCE S EMI CONDUCTOR SGE ]> • 70b2ST7 0001620 f l 'î a * P S C P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12/15/20/25 ns (Commercial)

A6W 85 MB3771 A6W 76 diode a4W

Abstract: A6W 76 Transistor A6W 87 diode a4W making code a6w A6W 85 A6W 99 HEC0470-01-630 SEMICONDUCTORS A4w a4w 76
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

service manual servo mbdht2510e

Abstract: MBDHT2510 MANUAL msm 8255 MDDHT5540E MBDHT2510 CODE ERROR MBDHT2510E MBDHT2510 MDDHT5540 MADHT1507 MEDHT7364
Contextual Info: AC Servo MINAS A5 series High performance, multi function and easy use, all advanced. Easy Safe k Quic rt Sma t Ligh  2009/10 Catalog Contents A small step for axis. Large step ahead for system motion. Features. 2

V06C HITACHI

Abstract: DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C
Contextual Info: Diodes Axial • it m. Lead Type v-vwmm* mm#*- m¿2&&r¿3>cy7 vyz^mm^ l«-?íf5o t t x - yy yya iFeatures ►Hitachi diodes are available for any kind of applications. The versatile lineup includes general use rectifier diodes, surge-absorbing devices, high-voltage

HD6417709AF133

Abstract: hd6417709a A6W 85 MB3771 A6W 76 diode a4W BUFFER HD74LS244 A6W 87 HD6417709AF making code a6w A6W 76 A6W 99 DBLC-J25SAF
Contextual Info: Hitachi Microcomputer Development Environment System SH7709A CPU Board HS7709ASTC01H SH7729 CPU Board HS7729STC01H User’s Manual ADE-702-215 Rev. 1.0 07/27/00 Hitachi, Ltd. HS7709ASTC01HE B Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

UA SH 105D

Abstract: EMP7128S P1WP HEC0470-01-630 VHC244 LQFP-208PIN TCO-711S4 CN8 ADC M2T-12AKH1-G5E 0180000A
Contextual Info: ADJ-702-300 日立マイクロコンピュータ開発環境システム SH7729R CPUボード ユーザーズマニュアル HS7729RSTC01H SH7729R CPUボード ユーザーズマニュアル 発行年月日 発行 編集 株式会社 日立製作所

Contextual Info: •HYUNDAI HY62256A-I Series 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

TO1C

Abstract: ASC ROIC HYUNDAI HY62256B-I Series Y622
Contextual Info: HY62256B-I Series HYUNDAI 3 2 K x 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

1S1948

Abstract: 1S2063 V03J
Contextual Info: 4496205 H I T A C H I / OPTOELECTRONICS V03 • —iSSaiEffl U3 > 5' -f % 6 8C 0 9 7 9 4 o T - ö l - 1 3 — K (General-Use Rectifier Diode) bñ VRRM : 2 0 0 V -8 0 0 V DE I ^ M T L S D S OOOTTTM 0 O ' f (AV) : 1 -3A 62M IN -(2 .4 4 )5 .0M A X "2 9 M IN -+ ^ o .2 H ^ 2 9 M I N - <1-1 4 >

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

ZSH5MAZ27

Abstract: ZSH5MA27 ZSH5MT V06C HITACHI ZSH5MT27 IN 47 serise zener diodes data ZSA5A27 hitachi rectifier U05B DSA3A1 V06C
Contextual Info: Status List Date:Nov. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant Included RoHS exemption substance N:Non compliant Production Status M:Mass production O:Order production W:Working sample A:Abolition •General-Use Rectifier Diodes

ZSH5MAZ27

Abstract: ZSH5MA27 U05B ZSH5MC27 ZSH5MA27A DSM3MA1 V06C H114B DHM3G80 DSA3A1
Contextual Info: ステータスリスト 2010.11 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 ◎：適合 ○：適合（但し適用除外項目物質を含有） 【ステータス】 ◎：量産品 ○：受注生産品 ▲：未対応

Contextual Info: Data Sheet October 1994 ; m A T eT ^ = 5 ^ Microelectronics CW025 Triple Output-Series Power Modules: 36 Vdc to 72 Vdc Input; 25 W Features • Small size: 2.80 in. x 2.40 in. x 0.50 in. ■ Low output noise ■ Industry-standard pinout ■ Metal case ■ 2:1 input voltage range

HEC0470-01-630

Abstract: EXO-3C 0180000A E28F128 HEC0470 kel manual tools P1WP Mitsubishi DA U31 3.96 Card Edge Connectors MB3771
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog