V 675 Search Results

Contextual Info: BC327A16 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W)675m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC327A25 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W)675m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SR751K

Contextual Info: PART N U M BER : SR751K34RD L a i e «fete: M a r 2 t, 2005 B a it 1. Electrical R a t in g : V aristcr V tlta g e M axim um ¿Jlowable Voltage Min 675 V blts Max 825 V blts AC rm s 460 V tlts DC 615 V tlts 1240 V tlts 40000 A M a x im u n C lam ping V d ta g e at

semix223gb12v

Contextual Info: SEMiX223GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 323 A Tc = 80 °C 246 A 225 A ICnom ICRM SEMiX 3s VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 675 A -20 . 20 V 10

Contextual Info: SEMiX223GD12Vc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 323 A Tc = 80 °C 246 A 225 A ICnom ICRM SEMiX 33c VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 675 A -20 . 20 V

Contextual Info: PART NUM BER : SR751K 40D is * * i.to. 2 «. a 2005 B a it 1. Electrical Rating : Varistcr Vtltage Maximum .^JIcftAable Voltage Min 675 V tlts Max 825 V tlts AC rm s 460 Vt.lts DC 615 V tlts 1240 V tlts M axim un Clamping V dtage at 500A .8/20u s Withstanding Surge Current ,3/20pS

471KD10

Abstract: 390KD20 471KD14 varistor 471kd14 241kd10 391kd10 151kd14 390KD14 391kd07 431kd10
Contextual Info: STANDARD SERIES Part No. Maximum Energy Withstanding Allowable Voltage 10/1000µS Surge Current ACrms V 751KD05 460 DC (V) 615 (J) 22.40 681KD05 420 560 621KD05 385 561KD05 Maximum Clamping Voltage UL CSA VDE at 0.1mA (V) 750(675-825) at 5A (V) 1240 21.00

Contextual Info: 42*+2|42*+2- 7585-=>;1 :9@1; ;16-A 2EBOPMEN V V V V V :B lpbm\abg` \ZiZ[bebmr 7dV ]b^e^\mkb\ lmk^g`ma /[^mp^^g \hbe Zg] \hgmZ\ml0 Sebf lbs^ /pb]ma :ff1 a^b`am 673:ff0 Ib`a l^glbmbo^? Mbg3 675fW IG9>GB.l lbs^ Zg] m^kfbgZel \hfiZmb[e^ pbma IGS= /Onminm fh]ne^0 Zg] IGS75 SSR

655F

Abstract: 6555M bd 65
Contextual Info: 42*+2|42*+2- 7585-=>;1 :9@1; ;16-A 2EBOPMEN V V V V V :B lpbm\abg` \ZiZ[bebmr 7dV ]b^e^\mkb\ lmk^g`ma /[^mp^^g \hbe Zg] \hgmZ\ml0 Sebf lbs^ /pb]ma :ff1 a^b`am 673:ff0 Ib`a l^glbmbo^? Mbg3 675fW IG9>GB.l lbs^ Zg] m^kfbgZel \hfiZmb[e^ pbma IGS= /Onminm fh]ne^0 Zg] IGS75 SSR

67582-0000

Contextual Info: HOUSING 675820000 TERMINALCSEE TABLE A SIDE 3 .3 v p w r 3 .3 v p w r 3 .3 v p w r gnd b ik - L 5+/-1.5 t in n e d gnd gnd ty p . pwr 5v £ )re d - I500+/-30- 5v pwr 5v pwr gnd © b lk gnd - gnd I2 v p w r O I2 v p w r yei- I2 v p w r BACK 3 U L 1007 *18 BLK 887711300

DISC THYRISTOR

Abstract: D170U D1201 D170S single phase bridge rectifier pin configuration "921" Thyristor diode gto EUPEC Thyristor V4500 4500 igbt
Contextual Info: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.

snubber FOR 3PHASE BRIDGE RECTIFIER

Abstract: EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 D170S eupec phase control thyristor
Contextual Info: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.

GT 32 DIAC

Abstract: 2n50b 2N3936 TAG 203 350 2N1604 2N1601 2k63 2n2888 2N50B1 2N3004
Contextual Info: 2 [Uffi] LigkJ V t TYP* ,V DRM RRM <1 V DRM RRM Ms V BR 103 TAG 60F TAG 60A IO 10 IO BR 203 TAG 64F TAG 64A TAG 620P-* TAG 625P-* TAG 660F-* TAG 665F-* TAG 670F-* TAG 675F-* TAG 15F-* BTX 74F-* TAG 20F-* BTX 73F-* TAG 35F-* 2N3896F.2N3899F 10 IO 10 30 50

Contextual Info: SEMiX223GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 323 A Tc = 80 °C 246 A 225 A ICnom ICRM SEMiX 3s VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V 675 A -20 . 20

dram module

Contextual Info: DRAM MODULE Timing Chart I TIMING DIAGRAM READ CYCLE 613 ri ELECTRONICS DRAM MODULE Timing Chart (I) WRITE CYCLE ( EARLY WRITE ) NOTE : D o u t = OPEN • tRC V lH V lL CAS w DQ V lH - V lL - V tH - V lL - V lH - V lL - V lH - V lL - i v /m Don't Care 614

TQ-204

Contextual Info: d i ’ High speed IGBT IXSH/IXSM 35N100A V CES = ^C25 = 70 A = 3.5 V v CE sat 1 0 0 0 V Short Circuit SO A Capability Symbol Test Conditions v CES v CGR v GES T, = 25='Cto150°C 1000 V T, = 25"C to 150°C; RGE = 1 M ii 1000 V Continuous ±20 V V«. Transient

10 16s capacitor smd

Abstract: 226 smd capacitor RSM 2322 2222 632 series capacitor MOV 103 M 3 KV 336 smd CAPACITOR 2312 344 7 SMD resistor 474 2222 631 series capacitor SMD electrolytic capacitor
Contextual Info: Information New products and highlights i Ceramic capacitors Information Page Multilayer ceramic capacitors, NP0 10 V - 4000 V Multilayer ceramic capacitors, X7R 10 V - 2000 V Multilayer ceramic capacitors, Y5V 10 V - 250 V General purpose, high voltage capacitors 1000 V to 3000 V X7R and Y5V

nh366

Abstract: 755Q
Contextual Info: 42~~+2|; 7585->?<1 4534 :9A1< <16-B 2FCPQNFO V V V V V V V V V V Gbe^ Nh3? F689:6< @ 0 1 Gbe^ Nh3?66;>89 Gbe^ Nh3? DQD5=55757=685 /98>-/> 0->- /956 DhgmZ\m ZkkZg`^f^gm 6B1 6C DhgmZ\m k^lblmZg\^ 955fW Dhbe ihp^k 655f .Zm 6B ;VED/ DhgmZ\m fZm^kbZe B`SgO71 B`Nb

UAG2

Abstract: bolt torque chart UAG1 UAG1 saia-burgess UAG1 motor 0-215083-6 MicroMaTch saia saia X 6 wire stepper motor
Contextual Info: UAG Stepper Motors Rotational UAG1/2 Dimensions mm ∅ 20 x 17,2 Step angle (grad) 18 Holding torque (cNm) 0,7 / 0,5 Detent torque (cNm) 0,14 Resistance per winding bipolar/unipolar 6 V (Ω) 27/35 12 V (Ω) 150/170 24 V (Ω) 675/700 Gear combination on request

Contextual Info: □ IXYS Low V CE sat „ , „ IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A v CES ^C25 V C E (sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: TPA711 700-mW LOW-VOLTAGE AUDIO POWER AMPLIFIER SLO S 230-N O V EM BE R 1998 • Fully Specified for 3.3-V and 5-V Operation • Wide Power Supply Compatibility 2.5 V - 5.5 V • Output Power - 700 mW at V DD = 5 V, BTL, RL = 8 Q - 85 mW at V DD = 5 V, SE, RL = 32 Q.

ntjd4001n

Abstract: NTJD4105C
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ nC @ VGS = 4.5 V (5.0 V)/10 V* 0.23 0.275 0.7 1.82 3 3.5 0.36 0.45 1 2.1 0.23 0.275 0.7 0.36 0.45 0.55 RDS(on) Max (W) @ VGS = VDSS

2SN100

Abstract: 25N100
Contextual Info: VCES Low V CE sat <" W¥V High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A ^C25 1000 V 1000 V v* CE(sat) 50 A 1 3.5 V 50 A 4.0 V G_ Symbol Test C onditions Maximum Ratings V " ces Tj = 25°C to 150°C 1000 V v CGR T j = 25°C to 150°C; RGE = 1 M n 1000

ECG1068

Contextual Info: E C G INC PHILIPS 17E • btSBTSfi 00030=11 S S' ECG1068 COLOR DEMODULATOR 1 semiconductors MAXIMUM RATINGS T o = 2 5 ° C ITEM RATING UNIT V 1 5 .6 V I» 41 mA V j_, V ,- , V s -9 9 .5 , - 1 .5 V is - s . — 5 5„ - 5 V ,., + V 7-9 V u - . 0 [> + 0 .1 ,