V 22 Search Results

Contextual Info: AT59C11/22/13 Features • Low Voltage and Standard Voltage Operation 5.0 V Vcc = 4.5 V to 5.5 V 3.0 V (Vcc = 2.7 V to 5.5 V) 2.5 V (Vcc = 2.5 V to 5.5 V) 2.0 V (Vcc = 1.8 V to 5.5 V) User Selectable Internal Organization 1K: 128x8 or 64x16 2K: 256x8 or 128x16

Contextual Info: TO-92/TO-226AA “ 23 ‘2N ’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO DC Current Gain V CE sat *T •c Device Type Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @ v CB hFE hre (mA) (V) (V) (V) (nA) (V) @ lc c»*1 V (V) (mA) (MHz) (mA)

n5 s101 transistor

Abstract: pin diagram of Dual core cpu ATW SOT23 Si3016 MARKING A18 SOD123 H8 SOT-23 bav99 marking sot-23 KS SOD-123 marking code H6 SOT-23 bav99 code sot-23 marking code Ks
Contextual Info: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,

MVA attenuator

Abstract: MVA-1000
Contextual Info: Voltage Variable Attenuator MVA-1000+ Typical Performance Curves Attenuation @ V+=5 V 2 4 4 5 6 Attenuation dB Attenuation (dB) Attenuation @ 500 MHz 3 6 7 8 9 10 11 8 10 12 14 16 @ V Control=0 V 18 @ V Control=1 V @ V Control=2 V 20 12 @ V Control=3 V 22

SI3016

Contextual Info: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,

2N4401 EBC

Abstract: TP2222A
Contextual Info: TO -92/TO -226A A ‘2N’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at T = 25°C A V CE sat DC Current Gain ^cso 'c Device Type Max. V (BRJCBO V(BR)CEO V <BR)EBO Max. @ v CB (mA) (V) (V) (V) (HA) h FE h FE @ 'c (V) Min. Max. (mA) v CE Max.

MVA attenuator

Abstract: MVA-2000 variable attenuator
Contextual Info: Voltage Variable Attenuator MVA-2000+ Typical Performance Curves Attenuation @ 1000 MHz Attenuation dB 2 4 6 8 10 12 14 16 18 20 22 24 26 28 @ V+=3 V @ V+=5 V 1 2 3 4 5 6 7 8 9 10 11 12 V Control (V) Attenuation @ V+=3 V Attenuation @ V+=5 V 5 5 10 10 15

Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM20CSJ060 FLAT-BASE TYPE INSULATED PACKAGE 1. V upc 2. UFo 3. U p 4. V upi 5. V vpc 6. V Fo 7. V p 8. V vpi 9. V wpc 10 .W Fo 11 .W p 12 .V wpi 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. V nc V ni UN Vn Wn Fo P N U V

Contextual Info: PNP TRANSISTORS T| TO -92/TO -226A A l 23 ‘2N ’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at T.A = 25°C DC Current Gain *CBO v CE sat 't 'c Max. V(sn)CBO V (BRJCEO V (BR)EBO Max. Device Type @ v C8 h FE h FE @ 'c @ v CE (mA) (V) (V) (V) TP2907A

12f 575

Abstract: D1049N D428N D660N D798N thyristor 1012 446 DIODE
Contextual Info: M1 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 180 V 1400 V 220 V 1600 V 240 V 1800 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L

2SJ18

Abstract: 2SJ174 HA 1350S 2S1189 2S119 2sj196 mos-mcs 2SJ170 2SJ171 2SJ172
Contextual Info: - 22 - m % ft € m & m ss f t t % * K V ± * ft Ê (V) ft * tt ft (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) % M (min) (max) Vd s (A) (V) (A) ft t*È (Ta=25‘ C) (min) (max) V d s (V) (V) (V) Id (A) (min) (S) Vds (V) Id (A) 2SJ170 0 * SW-Reg, DDC MOS

Contextual Info: r1 MCD40 Thyristor/Diode Module TRMS — •TAVM V RRM — 2x 60 A 2x 38 A 1200-1600 V Preliminary data V RSM V DSM V RRM V DRM V V 1300 1700 1200 1600 / Type A/K G K II SOT-227 B, miniBLOC r I I MCD 40-12io6 MCD 40-16io6 A/K K = Cathode, A = Anode, G = Gate,

TP4221

Contextual Info: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS

SC34350

Abstract: 671-8039
Contextual Info: SQ3480 V.34 Plug and Play M odem Chip Set SIERRA SEMICONDUCTOR FAX PnP I 1 Data Modes: ITU-T formerly CCITT V.34, V.32bis, V.32, V.22bis, V.22, V.21, Bell 212A, 103 and Bell 202 Rec. (CID) _ Data Rates: 115,200 to 300 b it/s —I "AJ" Command Set n Error Control: V.42 and MNP

philips ptc thermistors smd

Abstract: philips ceramic capacitors smd philips AXIAL ELECTROLYTIC capacitors 103 smd resistor resistor smd 103 philips AXIAL ELECTROLYTIC capacitors general radial MKP479
Contextual Info: New Products & Highlights Ceramic Multilayer Capacitors, SMD Page 5 •X7R BM Etype 25 V, 50 V • Y5 V BM Etype 16 V, 25 V, 50 V • Z5U BME type 50 V Ceramic Capacitors, Leaded 22 • High voltage disc capacitors Film Capacitors 41 • General purpose miniature M KT 465-468

Contextual Info: / T T SG S-THOM SO N *7 .t. ö!!i!D»i[LII gTl(MD(g§ TS75C32 V . 3 2 , V . 2 2 b is , V . 2 2 , V . 2 3 , V . 2 1 , B E LL 21 2A , B E LL 103 M O D E M C H IP S E T ADVANCE DATA • CCITT V.32, V22bis, V.22, V.21, V.23, Bell 212A, Bell 103 COMPATIBLE MODEM

Contextual Info: VRRM =800-1600 V U A V M = 30 A Rectifier Diode Prelim inary Data V RSM V V RRM T0-220 TO-263 DSI DSI DSI DSI DSI DSI DSI DSI TO-263 AA Ki V V 900 1300 1500 1700 800 1200 1400 1600 30-08A 30-12A 30-14A 30-16A Symbol Test Conditions U(AV)M Tc = UsM T v, = 45°C;

72 vna sot 23

Abstract: 73D2920 73D2910 2920 data flow manual fht 100 remote control code Un84 73D2950/2950T
Contextual Info: SSI 73D2950/2950T c m m s ä m V.29/V.27ter/V.22bis/V.22/V.21 /V.23, Bell 212A/103, MNP2-5, V.42/V.42bis, Low Power FAX/Data Modem Chip Set A TDK G ro u p/C o m p an y Advance Information December 1993 DESCRIPTION FEATURES The SSI 73D2950 modem chip set is capable of both

Contextual Info: nixYS DSSK 10-018A Advanced Technical Data Power Schottky Rectifier •FAV with common cathode V rrm 2x5 A 180 V 0.62 V VF v TO-220 AB RSM V V rrm Type V ■ I-] A 180 180 C A DSSK 10-018A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions

diode lt 246

Contextual Info: □IXYS Thyristor Modules Thyristor/Diode Modules MCC 225 ITRMS = 2 x 400 A •t a v m V v RRM V RSM VRRM V DSM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ^TRMS ^TAVM TVJ ~ Tc = 85°C; 180° sine N'SM» ^FSM TVJ = 45°C; VR= 0

AD8632

Abstract: AD8632AR AD8631 AD8631ART electret mic
Contextual Info: a FEATURES Single Supply Operation: 1.8 V to 6 V Space-Saving SOT-23, ␮SOIC Packaging Wide Bandwidth: 5 MHz @ 5 V, 4 MHz @ 1.8 V Low Offset Voltage: 4 mV Max, 0.8 mV typ Rail-to-Rail Input and Output Swing 2 V/␮s Slew Rate @ 1.8 V Only 225 ␮A Supply Current @ 1.8 V

DO-41 package 1N4148 CHARACTERISTICS

Abstract: DO-41 package 1N4148 1n9145 1N4148 1N4150 1N4151 1N4448 1N4531 1N914 1N914A
Contextual Info: DO-35 SWITCHING DIODES 500 MW Electrical Characteristics (At Ta=2S°C, Unless Otherwise Specified Type a t V R P,v v F @ lF c d & Vr *0 'fm trr (mA) (mA) nsec No. max (MA) (W) min (V) max (V) (V) (mA) max (PF) (V) 1N914 5 75 0.5 100 1 10 4 75 225 4 1N914A

RCA423

Abstract: RCA410 RCA411 RCA1B09 RCA1B06 2N6514
Contextual Info: Power T ransistors High-Voltage n-p-n and p-n-p Type Selection Charts cont’d -hFE V CEO*SUS* V C E X (sUs) 'c V CE V V A V 'c E X mA Temp.—°C V CE^sat^“ V 25 150 200 250 275 300 300 350 350 250 225 350 300 400 325* 375 450 Package 15 min 10-50 15 min

d 4464 c

Abstract: D1049N 4836 transistor 5586 D798N D428N v 4836
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 220 V 1400 V 280V 1600 V 310 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L