UV PHOTODIODE WAVELENGTH 250 TO 260 Search Results

C9750

Abstract: C10990 S11059-78HT S11154-01CT S10604
Contextual Info: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS

Contextual Info: P RE L I M I NARY Detectors UV-Enhanced Silicon Avalanche Photodiode SUR-Series Description The SUR-Series is based on a silicon “reach-through” structure with high sensitivity in the DUV/UV wavelength range . Many applications particularly in the medical and

C10500

Abstract: linear CCD 512 TDI cmos image sensor
Contextual Info: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide

SIC01L-18

Contextual Info: SIC01L-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01L-5

Contextual Info: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01L-C5

Contextual Info: SIC01L-C5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

laser range finder schematics

Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Contextual Info: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series

uv sensors

Abstract: uv photodiode 400nm uv uv photodiode wavelength 250 to 260 PDU-S101
Contextual Info: UV Enhanced SiC Detectors PDU-S101 PACKAGE DIMENSIONS INCH [mm] HEADER 0.100 [2.54] PIN CIRCLE CL 0.210 [5.33] WINDOW CAP WELDED 0.155 [3.98] WIRE BONDS 0.055 [1.40] 45° Ø0.018 [0.46] VIEWING ANGLE 87° CHIP 0.500 [12.70] Ø0.185 [4.70] STANDOFF 0.150 [3.81]

Contextual Info: Technical information Current output type CMOS linear image sensors with variable integration time function S10121 to S10124 series 1 [Figure 1] Block diagram Features a NMOS linear image sensor (S3901 to S3904 series) Start pulse In previous current output type NMOS linear image

TW30SX

Abstract: 200w power amplifier PCB layout TL07x UV photodiodes TW30 TW30DZ uv sensor OPA128 photodiode amplifier schottky photodiode
Contextual Info: Special UV-Index Sensor “ERYCA” Read important application notes on page 5 ff. Features of the ERYCA special UV-Index Sensor The UVI With an Sensor ERYCA is a further development of our product Ery additional filter the accordance with the erythema action curve of the human skin

uv photodiode

Abstract: UV diode 280 nm diode 340 PDU-G102B
Contextual Info: UV Enhanced GaN Detectors PDU-G102B PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE

UV diode 280 nm

Abstract: uv photodiode UV diode 320 nm gw 340 uv detector smd transistor nm diode 340 sj 2038 uv detector circuit PDU-G106B-SM
Contextual Info: UV Enhanced GaN Detectors PDU-G106B-SM PACKAGE DIMENSIONS inch [mm] .095 [2.43] .020 [0.50] .110 [2.80] .083 [2.10] CATHODE 45° .032 [0.80] .138 [3.50] .126 [3.20] Ø.095 [2.40] .075 [1.90] .032 [0.80] QUARTZ WINDOW .034 [0.85] .091 [2.30] .058 [1.48] ANODE

Contextual Info: UV Enhanced GaN Detectors PDU-G102B PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE

PDU-G106B-SM

Abstract: uv photodiode 320nm
Contextual Info: UV Enhanced GaN Detectors PDU-G106B-SM PACKAGE DIMENSIONS inch [mm] .095 [2.43] .020 [0.50] .110 [2.80] .083 [2.10] CATHODE 45° .032 [0.80] .138 [3.50] .126 [3.20] Ø.095 [2.40] .075 [1.90] .032 [0.80] QUARTZ WINDOW .034 [0.85] .091 [2.30] .058 [1.48] ANODE

Contextual Info: UV Enhanced GaN Detectors PDU-G101A PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE

PDU-G105A-SM

Contextual Info: UV Enhanced GaN Detectors PDU-G105A-SM PACKAGE DIMENSIONS inch [mm] .095 [2.43] .020 [0.50] .110 [2.80] .083 [2.10] CATHODE 45° .032 [0.80] .138 [3.50] .126 [3.20] Ø.095 [2.40] .075 [1.90] .032 [0.80] QUARTZ WINDOW .034 [0.85] .091 [2.30] .058 [1.48] ANODE

L9657

Abstract: S10604
Contextual Info: 2007 Vol.2 E x h i b i t i o n s NEWS 2007 Vol.2 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / November Vision 2007 Stuttgart / Germany UKAEA (Oxford / UK) Productronica 2007 (Munich / Germany) 35th Scottish Microscopy Symposium

Contextual Info: TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER r r TAOS023D − JUNE 2007 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D D D PACKAGE S SIDELOOKER FRONT VIEW Photodiode, Operational Amplifier, and Feedback Components

Contextual Info: TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER r r TAOS023E − SEPTEMBER 2007 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D D D PACKAGE S SIDELOOKER FRONT VIEW Photodiode, Operational Amplifier, and Feedback Components

TSL257-LF

Abstract: J-STD-020D TSL257
Contextual Info: TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER r r TAOS023E − SEPTEMBER 2007 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D D D PACKAGE S SIDELOOKER FRONT VIEW Photodiode, Operational Amplifier, and Feedback Components

Contextual Info: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com

Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain

uv photodiode

Abstract: PDU-G102B 320nm
Contextual Info: UV Enhanced GaN Detectors PDU-G102B Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm]

Contextual Info: PHOTODIODE 100 mm2 SXUV100 FEATURES • Single active area • Detection to 1 nm • Stable response after exposure to EUV/UV conditions • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area