UTD484L Search Results
UTD484L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM |
Original |
utd484utd484l-tn3-tutd484g-tn3-to-252+4 | |
|
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM |
Original |
utd484utd484l-tn3-tutd484g-tn3-to-252+4 | |
utd484
Abstract: UTD484-TN3-R
|
Original |
utd484utd484lutd484-tn3-rutd484l-tn3-r+3 | |
DIODE RL 207
Abstract: utd484
|
Original |
utd484utd484-tn3-rutd484l-tn3-ro-252+5 | |
|
Contextual Info: UNISONICTECHNOLOGIESCO., LTD UTD484 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM |
Original |
utd484utd484-tn3-rutd484l-tn3-ro-252+4 |