UTD484 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

utd484

Abstract: UTD484-TN3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

DIODE RL 207

Abstract: utd484
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UTD484 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

Contextual Info: 友順科技股份有限公司 UNISONIC TECHNOLOGIES CO., LTD. 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-150103 Issue Date DFN封裝印字規則變更 Marking Rule Change of DFN Jan-27-2015 Page 1 of 2 變更主旨(TITLE):