UT34 Search Results

diode 244

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and

UT347

Abstract: Microsemi micronote series 050 UT362 UT242
Contextual Info: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT268 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

diode marking 226

Abstract: diode BY 226 all diodes ratings UT3418L UT3418
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

DO15

Abstract: UT347 1.7218 UR20S lM9433 DO-15
Contextual Info: Standard Recovery Rectifiers Part Number REC JANTX1N5622U JANTXV1N4249 JANTXV1NS622 JANTXV1N5622 RL107 S1M UT347 UT363 UT364 USSS UT249 UT242 UT244 UT24S UT247 1N5391 1N5391GP 1N5392 1N5392GP UT251 1N5393 1N5393GP UT252 1N5394 1NS394GP 1N5395 1N539SGP UT254

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT3404 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE M OSFET ̈ DESCRI PT I ON The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT3409 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in

diode marking 226

Abstract: diode BY 226
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT3404 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical

diode BY 226

Abstract: diode marking 226
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3458 Power MOSFET 4.1A, 60V N-CHANNEL POWER MOSFET DESCRIPTION 6 5 The UTC UT3458 is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and low gate charge. This device can

UT3409

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product

UT3404L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and

32A marking sot-23

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a

UT3419G

Abstract: UT3419
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419G is a P-ch enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.

marking 340G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3400 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS ON and low gate charge. This device can be operated with 2.5V low gate voltage.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and