UT3418 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

diode marking 226

Abstract: diode BY 226 all diodes ratings UT3418L UT3418
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

diode marking 226

Abstract: diode BY 226
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

diode BY 226

Abstract: diode marking 226
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT3418 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in