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    UT141ATP Search Results

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    UT-141A-TP

    Abstract: ut141atp
    Contextual Info: TECHNICAL DATA SHEET RPC-2.92 02S141-272E4 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Mechanically compatible with RPC-3.50 and SMA Documents Assembly instruction 02 A7 Material and plating RF_35/12.04/3.0 Connector parts


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    02s141-272e4d-8452608-s546ut-141a-tp+1ut141atp PDF

    UT-141A-TP

    Abstract: NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


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    mrfe6p3300hmrfe6p3300hr3ut-141a-tpnippon capacitors+7ut141a-tp863mhzdvbt250gx-0300-55-22an1955cdr33bx104akysjesd22-a114 PDF

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


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    mrf6p3300hmrf6p3300hr3/hr5mrfe6p3300hr3/hr5pcn12895+2mrf6p3300hr3mrf6p3300hr5 PDF

    865 RF transistor

    Abstract: transistor z9 UT-141A-TP J707 NIPPON CAPACITORS zo 107 600B AN1955 JESD22-A114 MRF6P9220HR3
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 1, 11/2005 RF Power Field Effect Transistor N -Channel Enhancement-Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


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    mrf6p9220hmrf6p9220hr3865 rf transistortransistor z9+7ut-141a-tpj707nippon capacitorszo 107600ban1955jesd22-a114 PDF

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


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    mrfe6p3300hmrfe6p3300hr3 PDF

    UT-141C-50-SP

    Abstract: 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H
    Contextual Info: Document Number: MRF6P3300H Rev. 2, 10/2008 Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. MRF6P3300HR3 MRF6P3300HR5 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre-


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    mrf6p3300hmrf6p3300hr3/hr5mrfe6p3300hr3/hr5pcn12895+11mrf6p3300hr3mrf6p3300hr5ut-141c-50-sp141cdvb-t schematicatc600s150ft250xtnippon capacitorsut-141a-tpcoaxan1955jesd22-a114 PDF