UT14 Search Results

UT14AD03

Contextual Info: Mixed-Signal Products UT14AD03 RadHard Pipelined Analog to Digital Converter Advanced Data Sheet January 24, 2008 INTRODUCTION FEATURES ‰ 14-bit Resolution ‰ Monolithic RadHard CMOS technology ‰ 3 MSPS conversion rate ‰ Integral non-linearity +/- 2 LSB

UT14AD03

Contextual Info: Mixed-Signal Products UT14AD03 RadHard Pipelined Analog to Digital Converter Advanced Data Sheet January 24, 2008 INTRODUCTION FEATURES ‰ 14-bit Resolution ‰ Monolithic RadHard CMOS technology ‰ 3 MSPS conversion rate ‰ Integral non-linearity +/- 2 LSB

UT14AD03

Contextual Info: Mixed-Signal Products UT14AD03 RadHard Pipelined Analog to Digital Converter Advanced Data Sheet July 17, 2007 www.aeroflex.com/RadHard INTRODUCTION FEATURES ‰ Complete monolithic, radiation-hardened analog-todigital converter ‰ 14-bit, 3-4 MSPS ‰ Internal sample and hold amplifier

UT14AD03

Contextual Info: Mixed-Signal Products UT14AD03 RadHard Pipelined Analog to Digital Converter Advanced Data Sheet September 17, 2007 FEATURES Maximum sample rate 4 MSPS 14-bit Resolution Cold spare on all buffers No missing codes Input bandwidth of up to15MHz Internal sample and hold

d67b

Abstract: d45b
Contextual Info: Standard Products UT14AD20P 14-bit, 20MSps Pipeline Analog-to-Digital Converter Advanced Data Sheet February, 2012 www.aeroflex.com/AtoD  Selectable 3.3/1.8V dual or 3.3V single analog supply; 2.0 to 3.3V output driver supply  1.49W LVDS or 1.28W (CMOS) power consumption

Contextual Info: www.teleqqertner.com Anschlußmaße nach IEC 1 6 9 -1 5 / K. Gärtner GmbH D—71144 Steinenbronn LerchenstraBe 35 Germany Phone: +49 7157 125-0 Fax: +49 7157 125-120 mating face accoring to IEC 1 6 9 -1 5 Innenleiter / inner conductor CuZn39Pb3 Cu1 Ni2Au1.27

IEC 60169 4

Abstract: IEC 60169 5 j01121a0044
Contextual Info: www.teleqqertner.com Anschlussmaße nach IEC 60169-4 / mating face according to IEC 60169— 4 LerchenstraBe 35 Germany Phone: +49 7157 125-0 Fax: +49 7157 125-120 38.3 m it Transportschutzkappe aus Kunststoff / with plastic protective cover for transport ?

Capacitor 1000uF

Abstract: ut-141 M102 SD1565
Contextual Info: SD1565 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . 500 WATTS @ 250µSec PULSE WIDTH, 10% DUTY CYCLE REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS

mrfe6vp5600hs

Abstract: MRFE6VP5600H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

Contextual Info: SILICON MONOLITHIC Bi-CMOS INTEGRATED CIRCUIT TB62701AN 16BIT SHIFT REGISTER, LATCH & CONSTANT CURRENT DRIVERS Th e TB62701 A N is spe cifically d e sign e d fo r LED and LED D IS P L A Y co n stan t cu rre n t drivers. Th is co n sta n t cu rren t o u tp u t circu it is ab le to set up

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

UT-141C-25-TP

Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
Contextual Info: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

Contextual Info: Coaxial Line Stretchers DC to 10.0 GHz Coaxial Line Stretchers HLS Series These coaxial line stretchers maintain an impedance of 50Ω while changing the length of the coaxial tube and adjusting the phase. One type is locked after the adjustment and another type can be used in

Contextual Info: H R M s e r ie s IN FO R M A T IO N RFco•AXIAL CONNECTORS The H R M Hirose R ad io Miniature series are connectors o f the S M A (Sub-M iniature T y p e A ) type, prescribed in M IL -C -3 9 0 1 2 . We developed them in 1967, fo r the first tim e in Japan, thanks to our co m pan y's outstanding technology. Since then, their

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

Contextual Info: ANALOG DEVICES FEATURES Large 16 x 16 High Speed Nonblocking Switch Array Switch Array Controllable via an 80-Bit Serial Word Serial Data Out Allows "Daisy Chaining" of Multiple AD8116s to Create Large Switch Arrays Over 256 x 256 Complete Solution Buffered Inputs

24C02

Abstract: MVTX2601 MVTX2601AG PR100
Contextual Info: MVTX2601 Unmanaged 24-Port 10/100 Mbps Ethernet Switch Data Sheet October 2003 Features • • • • • • • • • • • • • Ordering Information Ιntegrated Single-Chip 10/100 Mbps Ethernet Switch 24 10/100 Mbps Autosensing, Fast Ethernet Ports with RMII or Serial Interface 7WS . Each

T08N

Abstract: UT01N t03n n21p UT03N n25p n20p AD8151 T09N N31P
Contextual Info: PRELIMINARY TECHNICAL DATA TM 33 x 17, 3.2Gb/s Digital Crosspoint Switch a s tre a m D 7 A 5 F irst Ran k 1 7 x 7 b it L a tc h Se co n d Ra n k 1 7 x 7 b it L a tc h Input Decoders RE INN CS Output Address Decoder FEATURES Low Cost 33 x 17, Fully Differential, Nonblocking Array

SUN HOLD MD-5

Abstract: H22F transistor H6C ZL50418 10/100/1000 3 port switch diode h5e tag l9 225 400 1000BASE-X 8B10B PR100
Contextual Info: ZL50418 Managed 16-Port 10/100 M + 2-Port 1 G Ethernet Switch Data Sheet February 2004 Features • • • • • • • • • • Ordering Information ZL50418/GKC 553-pin HSBGA -40°C to +85°C • • • • • • • • • Provides port based and ID tagged VLAN support

h337

Abstract: h608 MAC01 ZL50404 ZL50404GDC
Contextual Info: ZL50404 Lightly Managed/Unmanaged 5-Port 10/100M Ethernet Switch Data Sheet Features • • • • • August 2004 Integrated Single-Chip 10/100 Ethernet Switch • Four 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII, MII, GPSI, Reverse MII & Reverse GPSI interface options

PDM-LR-PC-CF

Abstract: UT141A UT-141A PDM-LP-141-SO-CF 85UT
Contextual Info: プッシュオンタイプ セミリジット＆セミフレキ ケーブル用同軸コネクタ PDM Series 特性インピーダンス 50 Ω 概 要 PHS携帯電話基地局用セミリジットケーブル、 セミフレキケーブル等に対応したコネクタです。

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

ZL50404

Abstract: ZL50404GDC T14 N03
Contextual Info: ZL50404 Lightly Managed/Unmanaged 5FE Layer-2 Ethernet Switch Data Sheet Zarlink Features • • • • • • • August 2006 Integrated Single-Chip 10/100 Mbps Ethernet Switch • Four 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII, MII, GPSI,