UT 16M Search Results

HY51V17404A

Contextual Info: «HYUNDAI HY51V17404A, HY51V16404A 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Extended Data O ut m ode CM O S DRAMs. Extended Data O ut mode

HY5117804B

Abstract: 5117804b HY5117804
Contextual Info: HYUNDAI HY5117804B>HY51168046 2M X 8-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 2,097,152 x 8-bit configuration with Extended Data O ut n o d e CM O S DRAMs. Extended Data O ut m ode

44v16104

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consum ption(Norm al

44c16104

Abstract: TC 32 DON
Contextual Info: KM44C16004B, KM44C16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or

PCD3-24-1212

Abstract: PCD3-5-1212 PCD1R5-24-1212 PCD1R5-5-1212 PCD3-12-1212 PCD6-5-1212
Contextual Info: LAMBDA/k PCD-SERIES Dual output DC-DC converter 1.5W ~ 6W DENSEI-LAMBDA Model name PCD 6 - 24 1212 S e rie s n am e O utp ut p ow e r Input voltag e O utp ut vo ltag e • Features • • • • • Input/Output isolation 5 dimensions shield metal case Over current protection

asus

Abstract: verilog code for barrel shifter zspa verilog code for 16 bit barrel shifter ASUS l asus diagram asus block diagram
Contextual Info: S YSTEM L EVEL I NTEGRATION EMBEDDED PALMDSPCORE SYSTEM Syst em C lock Data In/O ut rce Mas te Cloc r k Flas h/R Prog OM ram SR Wor AM kspa ce Sou EEP RO Data M Em Micr bedded ocon tr Core oller Cac h Mem e ory Micr oco Peri ntroller pher als Data In/O ut

Contextual Info: KM416C4004B, KM416C4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-5 or -6) are optional features of this family.

HY5118164B

Abstract: HY5116164B
Contextual Info: •H YUN DAI H Y 5 1 1 8 1 6 4 B ,H Y 5 1 1 6 1 6 4 B 1Mx16, E xten ded Data O ut m ode DESCRIPTION T h is fa m ily is a 16M bit d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 1 6 -b it c o n fig u ra tio n w ith E xte n d e d D ata O ut m ode C M O S

Contextual Info: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fam ily of 16 ,777,216 x 4 bit Extended Data O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access o f m em ory cells w ithin the sam e row. R efresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5, o r -6), po w e r co n sum p tion(N orm a l

KM48C2104B

Contextual Info: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2 M x 8 Bit C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data O ut CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin th e sam e row, so called H yper P age M ode. Power

Contextual Info: KM44C1004C, KM44V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended D ata O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Pow er supply volta g e + 5 .0V or +3.3V , access

be5e

Abstract: 31DQ3
Contextual Info: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1 ,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended Data O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Power supply vo lta g e + 5 .0V or +3.3V , access

C2004A

Abstract: KM48C2104A
Contextual Info: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2 M x 8 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 2 ,0 97 ,1 5 2 x 8 bit E xtended Data O ut C M O S DRAM s. E xtended D ata O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Pow er supply

Contextual Info: CMOS DRAM KM432C515, KM432V515 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION T his is a 524,288 x 32 bit E xtended D ata O ut C M O S DRAM . E xtended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page M ode. P ow er sup ply v oltage +5.0V o r +3.3V , refresh cycle 1 K, acce ss tim e (-5 o r -6), pow er

Contextual Info: Ultrathin Chip Capacitors UT Series GENERAL DESCRIPTION The Ultrathin Chip Capacitors have been introduced to compliment the standard chip capacitors providing a lower profile height to the end user. With advances in standard ceramic chip capacitor technology,

0.04 micro farad ceramic capacitor

Abstract: T0-32
Contextual Info: Ultrathin Chip Capacitors UT Series GENERAL DESCRIPTION The Ultrathin Chip Capacitors have been introduced to compliment the standard chip capacitors providing a lower profile height to the end user. With advances in standard ceramic chip capacitor technology,

SPI300T8AG

Contextual Info: Sparkle Power Inc. A Leading Power Supply Manufacturer Web site: www.sparklepower.com UT SPI300T8AG RoHS Compliant 300 Watts TFX12V Switching Power Supply Features • Complied with TFX12V standard  Active Power Factor Correction (PFC) meet EPA  High efficiency and reliability

3a92

Contextual Info: •H YU ND AI HY51V17404C, HY51V16404C 4M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -b it configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data Out m ode

8104b

Contextual Info: Preliminary SPEC CMOS DRAM KM48V8004B, KM48V8104B 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 8,3 88,60 8 x 8 bit Extended D ata O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access of m em o ry cells w ith in the sam e row. R efresh cycle 4 K Ref. o r 8K Ref. , access tim e (-4, -5 o r -6), po w e r co n su m p tio n (N o rm a l or

adm5120p

Abstract: ADM5120 CAS IE 116 weighting systems jrc 2114 biss 0001 RMCF 1/16 1K 1% R EC Bus body marking MCL MCC 26 16 101B SOCRATES
Contextual Info: Data Sheet, Rev. 1.32, Nov. 2005 ADM5120P/PX Di st rib ut io n wi th ND A Network Processor Version AB Communications Edition 2005-11-09 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.

Contextual Info: »fl Y U H Dfl I * HY51V18164C,HY51V16164C 1U xie, Extended Data O ut mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

trw 8040

Contextual Info: IBM11M16735B IBM11M16735C 16M x 72 DRAM MODULE Features • 168 Pin JE D E C Standard, 8 Byte Dual In-line M em ory M odule • O ptim ized for ECC applications • 16M x72 Extended Data O ut EDO M ode D IM M s • System Perform ance Benefits: - Buffered inputs (except RAS, Data)

HY5117404

Contextual Info: “H Y U N D A I HY5117404B, HY5116404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -b it configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data Out m ode

Contextual Info: TIC INFORMATION CONTAINED « R E IN IS CONSIDERED •PROPRIETARY* TO BEL FUSE INC. AND SHALL NOT BE COPIED. REPRODUCED OR DISCLOSED VITW UT THE WRITTEN APPROVAL OF BEL FUSE INC. IPRELIM IN ARŸ] ELECTRICAL CHARACTERISTICS <655*0 NOMINAL TURNS RATIO: <8-5 : <1-4)