US1A MARKING Search Results
US1A MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
5962-8950303GC |
![]() |
ICM7555M - Dual Marked (ICM7555MTV/883) |
![]() |
||
MG80C186-10/BZA |
![]() |
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
![]() |
||
54ACT244/B2A |
![]() |
54ACT244/B2A - Dual marked (5962-8776001B2A) |
![]() |
||
ICM7555MTV/883 |
![]() |
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
![]() |
||
MQ80186-8/BYC |
![]() |
80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
![]() |
US1A MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
US1M spice
Abstract: US1x
|
Original |
J-STD-020C MIL-STD-202, DS16008 US1M spice US1x | |
US1M spiceContextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current |
Original |
MIL-STD-202, DS16008 US1M spice | |
US1M spiceContextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current |
Original |
MIL-STD-202, DS16008 US1M spice | |
US1M spiceContextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current |
Original |
MIL-STD-202, DS16008 US1M spice | |
Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss |
Original |
J-STD-020C DS16008 | |
US1J
Abstract: US1A
|
Original |
J-STD-020C DS16008 US1J US1A | |
US1M MARKING CODE
Abstract: US1M spice marking c y US1D US1J US1A-13 marking us1m
|
Original |
J-STD-020C DS16008 US1M MARKING CODE US1M spice marking c y US1D US1J US1A-13 marking us1m | |
GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: vishay MARKING UM SMA US1M MARKING CODE us1m vishay JESD22-B102 J-STD-002 us1g vishay RECTIFIER marking UG 08 marking us1j Vishay
|
Original |
J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 18-Jul-08 GENERAL SEMICONDUCTOR MARKING UJ SMA vishay MARKING UM SMA US1M MARKING CODE us1m vishay JESD22-B102 J-STD-002 us1g vishay RECTIFIER marking UG 08 marking us1j Vishay | |
Contextual Info: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time |
Original |
J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time |
Original |
J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SMD HF8Contextual Info: US1A thru US1M Surface Mount Glass Passivated High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A FEATURES * Plastic package has Underwriters Laboratories * * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching |
Original |
DO-214AC, SMD HF8 | |
US1AContextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency |
Original |
J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 US1A | |
Contextual Info: US1A thru US1M Taiwan Semiconductor CREAT BY ART FEATURES High Efficient Surface Mount Rectifiers - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Ultrafast recovery time for high efficiency - Built-in strain relief |
Original |
J-STD-020 2011/65/EU 2002/96/EC DO-214AC AEC-Q101 D1405051 | |
GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
|
Original |
J-STD-020C, DO-214AC 2002/95/EC 2002/96/EC 03-Jul-06 GENERAL SEMICONDUCTOR MARKING UJ SMA US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08 | |
|
|||
Contextual Info: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency |
Original |
J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 11-Mar-11 | |
DIODE US1J
Abstract: US1K-T3
|
Original |
SMA/DO-214AC SMA/DO-214AC, MIL-STD-750, DIODE US1J US1K-T3 | |
US1A-US1M
Abstract: US1A.US1M US1A us1j diode us1j bl galaxy
|
Original |
DO-214AC oC/10 US1A-US1M US1A.US1M US1A us1j diode us1j bl galaxy | |
Contextual Info: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency |
Original |
J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency |
Original |
J-STD-020, 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: US1A – US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss |
Original |
SMA/DO-214AC SMA/DO-214AC, MIL-STD-750, | |
us1m diode
Abstract: do-214ac footprint marking of US1J diode US1K-T3
|
Original |
SMA/DO-214AC SMA/DO-214AC, MIL-STD-750, us1m diode do-214ac footprint marking of US1J diode US1K-T3 | |
marking UD
Abstract: US1M
|
Original |
DO-214AC 50mVp-p marking UD US1M | |
Contextual Info: US1A - US1M 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC Features Glass passivated chip junction For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place |
Original |
SMA/DO-214AC MIL-STD-750, | |
US1M MARKING CODE
Abstract: marking us1m us1m
|
Original |
J-STD-020C DS16008 US1M MARKING CODE marking us1m us1m |