UPD42S Search Results

nec 14t tv

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / uPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /UPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

d42s

Abstract: n010 marking
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT uPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M -W ORD BY 4-BIT, EDO Description The ,uPD42S16405L, 4216405L are 4,194,304 w ords by 4 bits CMOS dynam ic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: NEC pPD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ¿/PD424900A/L and /UPD42S4900A/L are fast-page dynam ic RAMs organized as 524,288 words by 9 bits a nd designed to o p e ra te from a single power supply. O ptional features are pow er supply voltage + 5 V or

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ /¿¿P P 42S 16400, 4216400, 42S 17400,4217400 16 M-BIT DYNAM IC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The ,uPD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CM O S dynamic RAM s. The

IPD42S18165-60

Abstract: tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 1 8 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S18165,4218165 are 1,048,576 words by 16 bits C M O S dynamic RAMs with optional hyper page mode

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,uPD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S17805, 4217805 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE description The UPD42S17805,4217805 are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

424260-60

Abstract: 4275a5
Contextual Info: DATA SHEET \ I F f~ / MOS INTEGRATED CIRCUIT / uPD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode

NEC 424400

Abstract: D424400GS 424400-70 NEC 424400-70 424400 60 d424400 424400-60 424400 424400-70 nec uPD424400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ,uPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¡PD42S4400, 424400 are 1,048,576 w ords by 4 bits CMOS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.

NEC Japan 424210-60

Abstract: NEC 424210-60 424210-60-G UPD42S4210 424210 NEC 424210
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PD 42S4210, 424210 4 M-BiT DYNAMIC RAM 256K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S4210, 424210 are 262,144 words by 16 bits CMOS dynamic RAMs with optional hyper page mode

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S2000LAB32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S2000LAB32S series is a 2,097,152 words by 32 bits dynamic RAM m odule (Small O utline DIMM) on which 4 pieces of 16 M DRAM: ,uPD42S17800L. are assembled.

D42S16165

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /xPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

EI marking

Abstract: D42S17805L-A50
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿ ^ 0 4 2 5 1 7 8 0 5 1 ., 4 2 1 7 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The ,uPD42S17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S16400L, 42164001 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D escrip tio n The ,uPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The

NEC uPD 833

Abstract: NEC 4216160
Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ ^uPD42S16160,4216160,42S18160,4218160 1 6 M - B IT D Y N A M IC R A M 1 M -W O R D B Y 1 6 -B IT , F A S T P A G E M O D E , B Y T E R E A D / W R IT E M O D E Description T h e ^ P D 4 2 S 1 6 1 6 0 , 4 2 1 6 1 6 0 , 4 2 S 1 8 1 6 0 , 4 2 1 8 1 6 0 a re 1 ,0 4 8 , 5 7 6 w o rd s b y 16 b its C M O S d yn a m ic R A M s. T h e

42S4800-70

Abstract: PD42S4800 28/nec 42s4800
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The UPD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

4218160LE-60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,uPD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT ;UPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD42S16400L, 4 2 1 6400L, 42S17400L, 4 2 1 7400L are 4,194,304 words by 4 bits CMOS dynam ic RAMs. The

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

uPD42S4800

Abstract: UPD42S4800-70 KM48C512-10 nec v80 upd424800le uPD424800
Contextual Info: - 4M CMOS X 4 D y n a m i c ••/ f- > R A M 5 2 4, 2 8 8 x 8 2 8 P I N 5 1 4 8 0 0 A * [*typ] / ft t í 239 it, f) [*typ] U 71^ m £ a TRAC TRCÏ TCAH max ain «in (ns) (ns) (ns) £ CC) KM514800JP/Z P/TT/RR-10 HM514800JP/ZP/TT/RR-7 HM514800JP/ZP/TT/RR-8

transistor f422

Abstract: transistor f422 equivalent uPD424210 TC514265DJ transistor NEC B 617 TOSHIBA COMPRESSOR 60 HZ chip de video closed caption decoder f422 f422 transistor
Contextual Info: ADV601 Preliminary Data Sheet January 1996 For current information contact Analog Devices at 617 461-3881 ADV601 Low Cost Multiformat Video Codec APPLICATIONS FEATURES • • • • • • Precise Compressed Bit Rate Control • Field Independent Compression

CI 817a

Contextual Info: ADV601 Preliminary Data Sheet January 1996 For current information contact Analog Devices at 617 461-3881 APPLICATIONS FEATURES • • • • • • Precise Compressed Bit Rate Control • Field Independent Compression • Flexible Video Interface Supports All

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.