UPC322 Search Results

3341DC

Abstract: UPC3221GV-E1-A 617DB-1010 UPC3221GV A50X TRANSFORMER RF 4.5 MHZ TOKO
Contextual Info: NEC's GENERAL PURPOSE 5 V UPC3221GV AGC AMPLIFIER FEATURES • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = +2.5 dBm at minimum gain INTERNAL BLOCK DIAGRAM AND PIN CONFIGURATION • WIDE AGC DYNAMIC RANGE: GCR = 50 dB TYP VCC 1 • ON-CHIP VIDEO AMPLIFIER: VOUT = 1.0 VP-P at single-ended output

c3220

Abstract: UPC3220GR-E1-A IR260 617DB-1010 UPC3220GR NOTE U-134
Contextual Info: DATA SHEET NEC's LOW DISTORTION DOWN-CONVERTER IC UPC3220GR FOR DIGITAL CATV FEATURES DESCRIPTION • LOW DISTORTION: IIP3 = +1.0 dBm TYP. • WIDE AGC DYNAMIC RANGE: GCRtotal = 45.5 dB TYP. NEC's UPC3220GR is a silicon monolithic IC designed for use as IF down-converter for digital CATV.

Contextual Info: DATA SHEET NEC's LOW DISTORTION DOWN-CONVERTER IC UPC3220GR FOR DIGITAL CATV FEATURES DESCRIPTION • LOW DISTORTION: IIP3 = +1.0 dBm TYP. • WIDE AGC DYNAMIC RANGE: GCRtotal = 45.5 dB TYP. NEC's UPC3220GR is a silicon monolithic IC designed for use as IF down-converter for digital CATV.

marking code C1E mmic

Abstract: marking code C3J mmic marking code C1F mmic PC2710TB marking code C1F PC3225TB UPC3225TB C3J marking PU10500EJ01V0DS MARKING C3M
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3225TB is a silicon germanium SiGe monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

video mixer circuit diagram

Abstract: video balun 617DB-1010 RF amplifier CIRCUIT DIAGRAM of 433 MHz UPC3220GR UPC3220GR-E1 j837 video balun circuit J1050
Contextual Info: CATV OUT-OF-BAND TUNER INTERNAL BLOCK DIAGRAM FEATURES • • • • • • • UPC3220GR LOW DISTORTION: IIP3 = +1 dBm TYP. WIDE AGC DYNAMIC RANGE: GCRtotal = 46 dB TYP. LOW NOISE FIGURE: 7 dB TYP HIGH GAIN: 71 dB TYP ON CHIP VIDEO AMPLIFIER SINGLE SUPPLY VOLTAGE : 5 V

marking code C1F mmic

Abstract: marking code C1E mmic bipolar transistor ghz s-parameter C1f TRANSISTOR Germanium Power Diodes Susumu Date Code uPC2708TB PC2710TB UPC3225TB upc322
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3225TB is a silicon germanium SiGe monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

transistor marking c3n

Abstract: PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

marking code C1F mmic

Abstract: marking code C1d mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3225TB is a silicon germanium SiGe monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

C3H marking

Abstract: C3K marking marking c1g PC3224TB marking c3k PC3215TB C3k mmic marking c1h capacitor feed-through C1H mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

Transistor Marking C3

Abstract: PC2710TB UPC3223TB PC3223TB marking c3j HS350 PC2708TB marking c1d PC3223TB-E3 PC3223TB-E3-A
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

C3H marking

Abstract: UPC3224TB HS350 marking c1h UPC2712TB c3k cel
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

C3j marking

Abstract: UPC3223TB marking c3j HS350 PC2710TB marking c1d PU10491EJ01V0DS UPC3223TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

UPC3227TB

Abstract: marking C1G
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

PC3224TB

Abstract: 2F P marking PC321 UPC3227TB PC2712T PC3227TB-E3-A
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

617DB-1010

Abstract: diagram and of s08 ic package UPC3221GV UPC3221GV-E1 TOKO 4 mhz transformer
Contextual Info: NEC's GENERAL PURPOSE 5 V UPC3221GV AGC AMPLIFIER INTERNAL BLOCK DIAGRAM AND PIN CONFIGURATION FEATURES • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = +2.5 dBm at minimum gain • WIDE AGC DYNAMIC RANGE: GCR = 50 dB TYP VCC 1 • ON-CHIP VIDEO AMPLIFIER: VOUT = 1.0 VP-P at single-ended output

PC3223TB

Abstract: marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

marking C3Z

Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

PC2710TB

Abstract: PC3236TK PC3223TB
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社