UPB582A Search Results

UPB582C

Abstract: BF08 UPB582 UPB582A UPB582B
Contextual Info: UPB582A UPB582B UPB582C DIVIDE-BY-4 PRESCALER FEATURES TEST CIRCUITS UPB582A • HIGH FREQUENCY OPERATION TO 2.8 GHz VCC • WIDE BAND OPERATION • SINGLE SUPPLY VOLTAGE: VCC = 5 V ±10% 4 3 IN 5 • COMPLEMENTARY OUTPUTS 2 6 1 OUT 7 8 DESCRIPTION The UPB582 series of devices are divide-by-4 silicon

B582C

Abstract: 1000 ohm resistor
Contextual Info: UPB582A UPB582B UPB582C DIVIDE-BY-4 PRESCALER FEATURES_ • HIGH FREQUENCY OPERATION TO 2.8 GHz • WIDE BAND OPERATION • SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% • COMPLEMENTARY OUTPUTS TEST CIRCUITS_ UPB582A VCC DESCRIPTION_

upb582c

Abstract: upb582
Contextual Info: UPB582A UPB582B UPB582C UPB582P DIVIDE-BY-4 PRESCALER TEST CIRCUITS FEATURES UPB582A HIGH FREQUENCY OPERATION TO 2.8 GHz WIDE BAND OPERATION SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% COMPLEMENTARY OUTPUTS DESCRIPTION The UPB582 series of devices are divide-by-4 silicon bipolar

upb582c

Abstract: upb582 dbm2
Contextual Info: UPB582A UPB582B UPB582C DIVIDE-BY-4 PRESCALER FEATURES TEST CIRCUITS_ • HIGH FREQUENCY OPERATION TO 2.8 GHz • WIDE BAND OPERATION • SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% . COMPLEMENTARY OUTPUTS UPB582A VCC DESCRIPTION The UPB582 series of devices are divide-by-4 silicon

Contextual Info: NEC UPB582A DIVIDE-BY-4 PRESCALER u i^ c UPB582P OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE A08 • HIGH FREQUENCY OPERATION 9.40<(> MAX -• • WIDE BAND OPERATION — 8.50(j) MAX — • SINGLE SUPPLY VOLTAGE: Vcc = 5 V ± 1 0 % • TWO SEPARATE IDENTICAL OUTPUTS

UPB582C

Abstract: BF08 UPB582 UPB582A UPB582B UPB582P
Contextual Info: NEC UPB582A UPB582B UPB582C UPB582P DIVIDE-BY-4 PRESCALER O U TLIN E D IM E N S IO N S FEATURES Units in mm O U TLIN E A08 • H IG H F R E Q U E N C Y O P E R A T IO N 9 404> MAX • W ID E B A N D O P E R A T IO N — 8.50<J> MAX — • • S IN G L E S U P P L Y V O L T A G E : V cc = 5 V ± 1 0 %

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

Prescalers

Abstract: UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014
Contextual Info: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

Prescalers

Abstract: UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584
Contextual Info: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an