UPA1 Search Results

a103g

Abstract: a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G UPA103G-E1
Contextual Info: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE

iei-1209

Abstract: uPA1438 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY uPA1438 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1438 is NPN silicon epitaxial D arlington (in millimeters) Power Transistor A rray that built in Surge Absorber and

nec transistor

Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

nec transistor

Abstract: transistor and schematic symbols
Contextual Info: NEC-TRANSISTOR ARRAY FEATURES UPA101G CONNECTION DIAGRAM BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Top view) UPA101G OUTSTANDING hFE LINEARITY SMALL PACKAGE _1 1_ 1- TAPE AND REEL PACKAGING OPTION

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 6 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1856 is a switching device which can be driven directly by a 2.5 V power source.

NEC uPA101G

Abstract: UPA101B UPA101G
Contextual Info: NEC/ CALIFORNIA 5bE D NEC b4274m 00GSS7S ÖS3 * N E C C UPA101B UPA101G TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Units in mm) OUTLINE BS14 T0PVIEW <^° 8 • OUTSTANDING hFE LINEARITY

d128

Abstract: PA1852 uPA1852 diode oa 90
Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 2 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1852 is a switching device which can be driven directly by a 2.5-V power source.

CI008

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS UPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N S This pro d u ct is N-Channe> M OS Field Effect in: millimeter T ransistordesignedforD C /D C converters and power

A103G

Abstract: a103g transistors
Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM Top view • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: UPA103G T w o of th e s e use a c o m m o n e m itte r pin an d ca n b e 14 u sed as d ifferen tial am p lifiers 13 12 11

Contextual Info: UPA1457H Transistors Darlington Transistor Array Number of Devices4 Type NPN/PNP V(BR)CEO (V)100 V(BR)CBO (V) I(C) Max. (A)5.0 P(D) Max. (W)28 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.0.5k

Contextual Info: UPA1424H Transistors Common Emitter Transistor Array Number of Devices Type NPN/PNP V(BR)CEO (V)70 V(BR)CBO (V) I(C) Max. (A)2.0 P(D) Max. (W)3.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

Contextual Info: TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM • FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers Top View UPA103G 14 13 12 11 10 9 8 • OUTSTANDING hFE LINEARITY

PA1552

Abstract: PA1552BH YTYN astex wv471 UV 471
Contextual Info: ~ r — $ • v — ï^ H I C o m p o u n d Field Effect P o w e r T ran sisto r uPA1552B t '^ / N 0r7 - M O S FET 7 U ' f ^ 'y 3 ~ > ^7 ^ I l f f i AîPA1552BIÎ, N ^ - ^ J H Ê É S / ^ - M O S FET77 U -f ? * m Z ' f y ï X f & f e t f f è t lT 4b 'U , g -ilT 7?

pa1520

Contextual Info: DATA SHEET Compound Field Effect Power Transistor UPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE D E S C R IP T IO N PACKAG E The /¿PA1520B is N-channel Power MOS FET A rray that built in 4 circuits designed for solenoid, motor and lamp D IM E N S IO N S

PA1812

Abstract: uPA1812 UPA1812GR-9JG N354
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor jjl PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The//PA1812 is a switching device which can be driven directly by a 4V power source. The uPA1812 features a low on-state resistance and excellent

UPA102G

Abstract: UPA102B
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded

Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

D20-D21

Abstract: diode d21 MC68040 MC68040V MC68060 9 Vcc 12 GND
Contextual Info: T TDO N/C GND CDIS IPL2 IPL1 IPL0 IPEND GND TDI TCK TMS MDIS* RSTI VCC GND GND* CIOUT VCC RSTO GND VCC GND BCLK VCC JS2* GND GND NC TCI AVEC SC0 BG TA PST0 PST3 BB BR S TBI SC1 TEA PST1 GND VCC GND LOCK R VCC GND PST2 TIP TS VCC LOCKE MI GND TLN0 Q UPA1 GND UPA0

Silicon Bipolar Transistor Q6

Contextual Info: NEC-TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM FEATURES Top View BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: UPA101B (9 GHz Single Transistors) 14 OUTSTANDING hFE LINEARITY 13 12 11 10 9 6 TWO PACKAGE OPTIONS: UPA101B: Superior thermal dissipation due to studded

Contextual Info: UPA102G IL08 * HIGH FREQUENCY PNP TRANSISTOR ARRAY —TOP VIEW— 14 1 13 2 12 SUB 3 11 10 9 8 4 SUB 5 6 7

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1854 is a switching device which can be driven directly by a 2.5-V power source.

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 9 0 0 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1900 is a switching device which can be driven directly by a 2.5 V power source.

transistor CD 910

Abstract: IEI-1213 MEI-1202 MF-1134 uPA1426 darlington transistor for audio power application npn darlington array EL120 EM202
Contextual Info: SILICON TRANSISTOR ARRAY / P 1 A 4 2 6 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The,uPA1426 is NPN silicon epitaxial Darlington Power Transistor PACKAGE DIMENSION (in m illim eters) A rray that built in 4 circu its designed for driving solenoid,

TRANSISTOR C 2 SUB

Abstract: UPA102G UPA102B
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded