EL120 Search Results

Contextual Info: discrete emitters IR emitting diodes O ED-EL1206C140 Package Style LeiiS Finish If mA SMT 1206 Clear Epoxy 50 Po (mW/sr) Limits of Safe Operation. Vr P (mW) (V) 5 WOtmaù ff#*A) *^p If (mA) 1.15 50 1.6 Padani Style Lens Finish ff SMT Clear Epoxy 20 80 t i n n ii)

Phico D - 0

Abstract: nec upd 1511 Phico D 0 phico d-0 94 PHICO phico d-0 Phico DO - 0 TQ00
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿tPD78370 A , 78372(A) 16 BIT SINGLE-CHIP MICROCOMPUTER The /iPD78372(A) contains a high-speed, high-performance 16-bit CPU and offers powerful arithmetic operation functions. An A/D converter and a real-time pulse unit, which provide the real-time control required in motor control,

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

CX9010-N031

Abstract: Beckhoff Ek1100 ES3004 bc515 hengstler 890 IL2301bxxx Fisher ROC 107 modbus CU2508 KL2541 HEIDENHAIN EnDat 2.1
Contextual Info: BECKHOFF New Automation Technology Ürünlere Genel Bakış Endüstriyel PC Gömülü PC Lightbus I/O Terminalleri Fieldbus Kutusu Sürücü Teknolojisi PC-Fieldbus kartları, Ağ anahtarları 2 Automation Motion I/O IPC Beckhoff Ürünlerine Genel Bakış | Bu katalog, Endüstriyel bilgisayarlar, saha haberleşmesi, sürücü teknolojileri, otomasyon yazılımları

PLC programming beckhoff

Abstract: cp70xx CX5020 CX5010 CX1000 EL2252 P1000 control philosophy EL1252 DIN EN 66025
Contextual Info: BECKHOFF New Automation Technology PC-based Control for the Tire and Rubber Industry Beckhoff | Open automation solutions for the rubber and tire ind Rubber and tire production is based on a very complex process that requires control and coordination of different production stages.

2SK1657

Contextual Info: M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm 2.8 ± 0.2 0.65ig:!5 1.5 3 The 2SK1657 is an N-channel vertical type MOS FET w hich can be driven by 2.5 V power supply. As the MOS FET is lo w Gate Leakage C urrent, it is suitable fo r filte r

nec V850e2m manual

Abstract: v850E2M architecture v850e2 architecture
Contextual Info: Cover User’s Manual 32 V850E2/PG4-L User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

7741B

Abstract: 2SJ205
Contextual Info: DATA SHEET MO S FIELD EFFECT TRANSISTOR 2SJ205 P-CHANNEL MOS FET FOR SWITCHING The 2SJ205, P-channel vertical type MOS FET, is a switching device PACKAG E DIMENSIONS U n it: mm which can be driven by 3 V power supply. As the MOS FET is driven by lo w voltage and does n o t require con­

TEA-1035

Abstract: TEA1035 APPLICATION NOTE TEA-1035 2SK2131 MEI-1202 tea 1035
Contextual Info: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK2131 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2131 is N -channel M O S Field Effect Transistor in m illim eters designed fo r solenoid, m o to r and lam p driver.

TC-2329A

Abstract: F16V 2SJ207 IEI-1213 iei-1209
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­

ITT DIODE tv

Abstract: 2SK1491 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1491 SWITCHING N-CHANNEL POWER MOS FET

2SK1273

Abstract: IEI-1213 MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1273 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm

K1132

Abstract: 2SJ166 2SJ186 2SK1132 T100
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

c 2328a

Abstract: 2SJ206 T500
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device

2SJ166

Abstract: 2SK1133 diode ir30
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK1133 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm

Contextual Info: Notice; You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1524 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION

2SK1664

Contextual Info: DATA SHEET i N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1664 is N-channel M O S Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters high voltage switching applications.

Contextual Info: N E C ^r DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT /iPC311 PRECISION VOLTAGE COMPARATORS DESCRIPTION FEATURES The jUPC311 is a v o lta g e c o m p a ra to r th a t has • Operate from single 5 V supply in p u t currents m ore than a hundred tim e s lo w e r

Contextual Info: M B k H Ϋ V W t f M J S . L.4 2 7 S 2 5 □ □ 4 C] 5 3 ,:I .'V :•? -1$ ! JE 1Fi 525 BNECE ! .‘ ■-i :• s ii ! ;J: -I I X ü ^ :■ r*U!‘0 ~ 1r" M 2 £ ATSH BIPOLAR ANALOG INTEGRATED CIRCUIT ¡i\PC659A 8-BIT A /D CONVERTER FOR V ID EO PROCESSING

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /JPD4216400, 4217400 are 4 194 304 w o rd s by 4 bits d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP II and 26-pin plastic SOJ.

Contextual Info: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page

uPC1237 equivalent

Abstract: nec uPC1237 uPC1237
Contextual Info: DATA SH EET NEC BIPOLAR ANALOG INTEGRATED CIR CU IT ELECTRON DEVICE ¿¿PC1237 PROTECTOR IC FOR STEREO POWER AMPLIFIER D E SC R IP T IO N ¿XPC1237 is a monolithic integrated circuit designed for protecting stereo power amplifiers and loudspeakers. FEATU RES

Contextual Info: DATA SHEET N EC BIPOLAR ANALOG INTEGRATED CIRCUIT îîPC1944 ADJUSTABLE PRECISION SHUNT REGULATORS DESCRIPTION ,uPC1944 are adjustable precision shunt regulators with guaranteed thermal stability. The output voltage can be set to any value between reference voltage 1.26 V and 24 V by two external resistors.

Contextual Info: DATA SHEET_ 75 3018 NEC MOS INTEGRATED CIRCUIT ^PD P 4-BIT SINGLE-CHIP MICROCONTROLLER The nPD 75P3018 replaces the nP D 753017’s internal m ask ROM with a one-tim e PROM, and features expanded ROM capacity. Because the nP D 75P3018 supports program m ing by users, it is suitable for use in evaluations of system s in