UPA DUAL TRANSISTOR Search Results

SR8800SMQ1950BY

Abstract: colpitt oscillator design lc colpitt oscillator SR8800SMQ2000BY rohde UPA cascode transistor array VCO NEC uPA 1400 sr8800 Simulation of 3 phase common mode choke R68000
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1034 Designing VCOs and Buffers Using the UPA family of Dual Transistors Abstract This application note will review the process by which VCO Voltage Controlled Oscillator designers choose their oscillator’s topology and devices based on performance requirement, real estate constraints and DC power consumption. Using a Personal Communication System (PCS) application as a practical example, this article will demonstrate a

Contextual Info: October 1997 FAIRCHILD M lC O N D U C T O R FDC6320C Dual N & P Channel, Digital FET General Description Features T h e s e dual N & P C hannel logic level en hancem ent m ode field e ffe c tra nsistors are produced using Fairchild's proprietary, high cell density, D M O S technology. This v e ry high de nsity

M68882

Abstract: MC68060 MC68040 MC68060FPSP M68000 MC68EC060 MC68LC060 MC68060ISP DSA0039258
Contextual Info: Porting software from an MC68040 to an MC68060 by Jeff Gokingco, Cliff Parrott, Robert Podnar 1.0 Credits This article was submitted to Electronic Design, and was published in August 1994. The article you are seeing here is a draft copy only, and that the final form of the article is the propery of Electronic Design.

M68882

Abstract: MC68040 MC68060 MC68LC060 M68000 MC68EC060
Contextual Info: Freescale Semiconductor Porting software from an MC68040 to an MC68060 by Jeff Gokingco, Cliff Parrott, Robert Podnar 1.0 Credits Freescale Semiconductor, Inc. This article was submitted to Electronic Design, and was published in August 1994. The article you are seeing

Contextual Info: f f H A R R IS U U S E M I C O N D U C T O R CD40107BMS CMOS Dual 2 Input NAND Buffer /Driver December 1992 Pinouts Features CD40107BF TOP VIEW • High Voltag» Type 20V Rating) • 32 Times Standard B Series Output Current Drive Sinking Capability - 136mA Typ. at VDD = 10V

Contextual Info: s a _ F U IIT S U DATASHEET * MB8287-25/-35 CMOS 288K-BIT HIGH-SPEED SRAM 32K Words x 8 Bits Static Random Access Memory with Automatic Power Down The Fujitsu MB8287 is a 32,768 words x 8 bits static random access memory with

si1250

Contextual Info: m is ,! HM-65642/883 8K x 8 Asynchronous CMOS StStÌC RAM January 1992 Features Description • This Circuit Is Processed In Accordance to Mll-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65642/883 is a CMOS 8192 x 8-bit Static Random

transistor A431

Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12

UD1001

Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

T2C211

Abstract: MAXQ20 MAXQ7665 anisotropic magnetoresistive circuit Design C0M13 can baudrate prescaler maxim temp sensors analog design guide circuit diagram of full adder 512rc quantum dc drivers
Contextual Info: Rev 0; 12/07 MAXQ7665/MAXQ7666 USER’S GUIDE V- MAGNET MAGNETIC FIELD DIRECTION M I R+ΔR I R-ΔR CAN 2.0B BUS S SHAFT I N ROTATION M M R-ΔR POWER MGMT 16-BIT TIMERS 3 V+ TEMP SENSOR UART (LIN 2.0) JTAG DIGITAL I/O CAN 2.0B 48-TQFN 7mm x 7m m -40°°C to

CD4013

Abstract: F3302 harris CD4013B
Contextual Info: f f l U U H A R R CD4027BMS I S S E M I C O N D U C T O R CMOS Dual J-K Master-Slave Flip-Flop Decem ber 1992 Pinout Features C04027BMS TOP VIEW • H ig h V o lta g e T y p e 20V R a tin g • Set - Reset Capability • Static Flip-Flop Operation - Retains State Indefinitely

transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

A1381 transistor

Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

ad548t

Contextual Info: A N A LO G D EV IC E S FEATURES Enhanced Replacement for LF441 and TL061 DC Performance: 200|iA max Quiescent Current lOpA max Bias Current, Warmed Up AD548C 250|jlV max Offset Voltage (AD548C) 2jiV/°C max Drift (AD548C) 2|iV p-p Noise, 0.1 to 10Hz AC Performance:

linear L 9113 smd

Abstract: MAXQ7667 APE12 Motorola transistor smd marking codes ultrasonic generator 20khz A3D5 Ultrasonic distance smd transistor marking sp1 MAXQ10 ultrasonic movement DETECTOR with alarm
Contextual Info: Rev 0; 4/09 MAXQ7667 USER’S GUIDE BURST ENABLE BURST BURST OUTPUT, DUTY CYCLE, AND PULSE COUNTER 0.47µF 0.47µF REFBG REFSAR 0.47µF REFECHO AIN0 AIN1 AVDD AIN2 AIN3 THERMISTOR AIN4 AIN5 VOLTAGE REFERENCE SIGMA-DELTA ADC -1 2mV 0mV AVDD/2 MUX 120kΩ BATTERY+

2sa525

Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

NS1000 n

Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

MA3232

Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor a640

Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

DIODE SJ 98

Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Transistor Equivalent list po55

Abstract: 1F15H transistor P6n motorola top mark smd 7h MAXQ2000 MAXQ622
Contextual Info: Rev 1; 7/10 MAXQ612/MAXQ622 USER’S GUIDE MAXQ612/MAXQ622 REGULATOR VOLTAGE MONITOR GPIO USB SIE* TXCVR 16-BIT MAXQ RISC CPU 6KB ROM SECURE MMU CLOCK 128KB FLASH WATCHDOG 6KB SRAM 2x 16-BIT TIMER 8kHz NANO RING IR DRIVER IR TIMER 2x SPI 2x USART I2C *MAXQ622 ONLY.

gunn diode ghz s-parameter

Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.

block diagram of wifi enabled robo

Abstract: powerline ethernet adapter schematic diagram ADSL2 DSLAM chipset VSC7385 EEMB GL850A mpc dhrystone ADSL2 Modem circuit diagram GL850 MPC8313E-rdb
Contextual Info: PowerQUICC Integrated Communications Processors freescale.com/powerarchitecture Table of Contents MPC8572E PowerQUICC III Processor MPC8568E PowerQUICC III Processor MPC8560E PowerQUICC III Processor MPC8555E PowerQUICC III Processor MPC8548E PowerQUICC III Processor

MAX2990

Abstract: transistor SMD P2F transistor a015 SMD smd A1015 A1015 smd transistor SMD P1f MAX2991 a1215 smd transistor transistor A1515 A1015 smd type
Contextual Info: MAX2990 INTEGRATED POWER-LINE DIGITAL TRANSCEIVER PROGRAMMING MANUAL Maxim Integrated Products -1- MAX2990 Programming Manual Rev 1.4 TABLE OF CONTENTS MAX2990 Functional Description . 4