UNSAWN Search Results

Contextual Info: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

IRFC24N15DB

Contextual Info: PD - 94750 IRFC24N15DB HEXFET Power MOSFET Die in Wafer Form N-CH l l G S Key Electrical Characteristics Packaged Part c Parameter Description 150V RDS(on) = 95mΩ (max.) 6" Wafer D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚

IRL2203N equivalent

Contextual Info: PD - 94751A IRLC2203NB N-CH HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G 30V RDS on = 0.007Ω (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c

Contextual Info: DOHP55-16/18 advanced Diode Chip Sonic FRED Type Ag Al DOHP 55 IF [A] VRRM [V] Surface 1600 1800 30 Package Chip Size [mm] x [mm] 8.65 4.95 sawn on foil unsawn wafer in waffle pack Mechanical Parameters Features: Area active 26.0 mm 2 Area total 42.8 mm 2

IR2128 application notes

Abstract: PD65003
Contextual Info: Data Sheet No. PD65003 IR2127C/IR2128C/IR21271C CURRENT SENSING SINGLE CHANNEL DRIVERDIE IN WAFER FORM Features • • • • • • • • • 100 % Tested at Probec Available in Chip Pack, Unsawn Wafer, Sawn on Film d Floating channel designed for bootstrap operation

Contextual Info: PD - 94770 IRFC2204B HEXFET Power MOSFET Die in Wafer Form N-CH D l l 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 40V RDS on = 3.6mΩ (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c Min. Typ. Max. Test Conditions

IRLML6404

Abstract: IRLML6403 IRLML6501 irlml6402 equivalent IRLC6401B
Contextual Info: PD - 95828 IRLC6401B HEXFET l l D -12V RDS on = 0.05Ω (max.) 6" Wafer Power MOSFET Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics (SOT-23 package) Parameter V(BR)DSS RDS(on)

IRFB18N50K equivalent

Contextual Info: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

irfc20

Abstract: irfb20n50k
Contextual Info: PD - 94736 IRFC20N50KB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.25Ω

IR2110 equivalent

Abstract: IR2113 CLASS D Class d IR2110 IR2113 APPLICATION NOTE 10KF6 circuit to ir2113 IR2110C IR2110 16 pin IR2110 application note MOSFET 600V 7A
Contextual Info: Data Sheet No. PD65001 IR2110C/IR2113C HIGH AND LOW SIDE DRIVER IN DIE WAFER FORM Features • 100 % Tested at Probec • 3.3V logic compatible • Available in Chip Pack, Unsawn Wafer, Sawn on Film d Separate logic supply range from 3.3V to 20V • Floating channel designed for bootstrap operation

IRFP460N equivalent

Contextual Info: PD - 94774 IRFC460NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 500V RDS on = 0.24Ω (max.) 6" Wafer S Electrical Characteristics (TO-247 Package) Parameter V(BR)DSS RDS(on)

Contextual Info: PD - 95844 IRFC61N15DB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Tape and Reel, Unsawn Wafer, Sawn on Film ‚ G 150V RDS on = 0.032Ω (max.)‚ 6" Wafer S Key Electrical Characteristics (TO-220 package)d Parameter

IRFC3810B

Abstract: IRFC3810
Contextual Info: PD - 95826B IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

Contextual Info: PD - 94673 IRFC4104B D HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe  G Available in Chip Pack, Unsawn wafer, S Sawn on Film ‚ Key Electrical Characteristics @TJ=25°C unless otherwise specified (TO-220 package)d l l Parameter V(BR)DSS

Contextual Info: PD - 97060 IRGC4065B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for

Contextual Info: IX150T06M-AG tentative Trench XPT IGBT Chip Type VCE [V] IC [A] IX150T06M-AG 650 300 Chip Size [mm] x [mm] 14.2 10.6 Package Ordering Code sawn on foil tbd unsawn wafer tbd in waffle pack tbd Features / Advantages: Applications: ● Easy paralleling due to the positive temperature

Contextual Info: JTS3702 Micropower dual CMOS voltage comparator: unsawn wafer Datasheet - production data Related products • See TS3702 for plastic packaged version Description The JTS3702 is a micro power CMOS dual voltage comparator with an extremely low consumption of 9 µA typical per comparator 20

MIFARE Card Coil Design Guide

Abstract: MF0ICU1 LCR meter for ICs package contactless Functional Specification
Contextual Info: MF0 IC U10 01 120 mm Bumped unsawn wafer on UV-tape contactless single-trip ticket ICs Rev. 3.2 — 16 March 2007 Product data sheet 127632 PUBLIC 1. General description 1.1 Scope The MF0 IC U10 01 is a contactless smart card IC designed for card IC coils following the

Contextual Info: PD - 94786 IRFCG20B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 1000V RDS on = 11Ω (max.) 5" Wafer S Key Electrical Characteristics (TO-220 Packaged Part)c Parameter Description

Contextual Info: PD - 94751 IRLC2203NB N-CH HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G 30V RDS on = 0.007Ω (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c

Contextual Info: DOHP15-16/18 advanced Diode Chip Sonic FRED Type Ag Al DOHP 15 IF [A] VRRM [V] Surface 1600 1800 10 Package Chip Size [mm] x [mm] 3.25 3.25 sawn on foil unsawn wafer in waffle pack Mechanical Parameters Features: Area total 10.6 mm 2 Wafer size Ø 125 mm Thickness

IR2184 application notes

Abstract: IR2183 application notes IR2184 equivalent IR2184 APPLICATION NOTE ir2184 circuit
Contextual Info: Data Sheet No. PD65007 IR2183C HALF-BRIDGE DRIVER DIE IN WAFER FORM Features • 100 % Tested at Probe! • Available in Chip Pack, Unsawn Wafer, Sawn on Film " • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage

Contextual Info: PD - 94766 IRFC054VB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn wafer Sawn on Film ‚ G 60V RDS on = 9.0mΩ (max.) 6" Wafer S Electrical Characteristics (TO-247) Parameter V(BR)DSS RDS(on) VGS(th)

IRFP32N50K equivalent

Contextual Info: PD - 94730 IRFC32N50KB D HEXFET 500V RDS on = 0.16Ω (max.) 6" Wafer Power MOSFET Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ Key Electrical Characteristics (TO-247 package) l G l Parameter V(BR)DSS RDS(on)