IRFC3810B Search Results

IRFC3810B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFC3810B Abstract: IRFC3810 Contextual Info: PD - 95826B IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description	Original	95826B IRFC3810B O-274 100nA IRFC3810B IRFC3810	PDF
Contextual Info: PD - 95826 IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description	Original	IRFC3810B O-274 100nA	PDF

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IRFC3810B

Abstract: IRFC3810
Contextual Info: PD - 95826B IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

Original

95826B IRFC3810B O-274 100nA IRFC3810B IRFC3810

PDF

Contextual Info: PD - 95826 IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

Original

IRFC3810B O-274 100nA

PDF