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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65)
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65)
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UN2154
Abstract: UNR2154
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 1.9±0.1 Collector-emitter voltage (Base open)
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UN2154
Abstract: UNR2154
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo
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Abstract: UNR2154
Contextual Info: Transistors with built-in Resistor UNR2154 UN2154 Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Collector to base voltage VCBO −30 V Collector to emitter voltage
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UN2154
Contextual Info: Transistors with built-in Resistor UN2154 Silicon PNP epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 For digital circuits 1.45 0.95 1 3 +0.1 0.4 –0.05 +0.2 1.9±0.2 Ta=25˚C +0.1 0.16 –0.06 0.8 1.1 –0.1 0.1 to 0.3 0.4±0.2 Parameter Symbol Ratings
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UN2154
Abstract: UNR2154
Contextual Info: Transistors with built-in Resistor UNR2154 UN2154 Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High forward current transfer ratio hFE • Costs can be reduced through downsizing of the equipment and
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UN2154
Abstract: UNR2154
Contextual Info: Transistors with built-in Resistor UNR2154 UN2154 Silicon PNP epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 For digital circuits 1.45 0.95 1 3 +0.1 0.4 –0.05 +0.2 1.9±0.2 (Ta=25˚C) +0.1 0.16 –0.06 0.8 1.1 –0.1 0.1 to 0.3 0.4±0.2 Parameter
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )
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un1000600mwun2000200mw+13n2111un2112un2113un2114un2115un2116un7000un8000un9110unr921cjun1219un4115un1211
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip411mip2f4mip2f3+7an12947amip2f2mip2f20msmip2f40msmip2e7dmypanasonic inverter dv 700 manualmip291
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