UMT BLOCK DIAGRAM Search Results

Contextual Info: Æ T SGS-THOMSON RiM &i(graKi(gS TDA8204 NICAM DECODER • HIGHLY INTEGRATED TWO-CHIP SOLU­ TION FOR NICAM DEMODULATION (using TDA8205 QSPK ■ DATA AND SOUND RECOVERY ACCORD­ ING TO EBU SPB 424 SPECIFICATIONS ■ l2S INTERFACE FOR DIGITAL AUDIO PUR­ POSES (14-bit samples, 32kHz word select

Contextual Info: ¿ = 7 SGS-THOMSON * • ]/, T D A 8 2 0 4 B NICAM DECODER HIGHLY INTEGRATED TWO-CHP SOLU­ TION FOR NICAM DEMODULATION using TDA8205 QSPK DATA AND SOUND RECOVERY ACCORDING TO EBU SPB 424 SPECIFICATIONS l2S INTERFACE FOR DIGITAL AUDIO PUR­ POSES (14-bit samples, 32kHz word select

umt block diagram

Abstract: TDA8204B TDA8205 tda820
Contextual Info: TDA8204B NICAM DECODER HIGHLY INTEGRATED TWO-CHIP SOLUTION FOR NICAM DEMODULATION using TDA8205 QSPK DATA AND SOUND RECOVERY ACCORDING TO EBU SPB 424 SPECIFICATIONS I2S INTERFACE FOR DIGITAL AUDIO PURPOSES (14-bit samples, 32kHz word select clock, 896kHz serial clock)

umt block diagram

Abstract: prbs generator using ic chips DAT INTERFACE MATSUSHITA SU SERIES TDA8204B TDA8205 IC-237 HA-019
Contextual Info: TDA8204B NICAM DECODER HIGHLY INTEGRATED TWO-CHIP SOLUTION FOR NICAM DEMODULATION using TDA8205 QSPK DATA AND SOUND RECOVERY ACCORDING TO EBU SPB 424 SPECIFICATIONS I2S INTERFACE FOR DIGITAL AUDIO PURPOSES (14-bit samples, 32kHz word select clock, 896kHz serial clock)

Contextual Info: rin ni LOW NOISE 150mA L.D.O REGULATOR R1 120N SERIES OUTLINE The R1120N Series are voltage regulator ICs with high output voltage accuracy, lowest supply current, low ON Resistance and high Ripple Rejection by CMOS process. Each of these voltage regulator ICs consists of a voltage reference unit, an

Contextual Info: C T SGS-THOMSON It, ffiùO»iLI ìlS®M è§ STV8230 NICAM SINGLE CHIP ADVANCE DATA • DEMODULATION, DECODING and PROC­ ESSING IN ONE CHIP ■ ON CHIP DATA SHAPING AND FM NOTCH FILTERS ■ AUTOMATIC DUAL STANDARD DEMODULA­ TION ■ SINGLE QUARTZ CRYSTAL FOR DUAL

Contextual Info: RF3863 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features „ „ „ „ „ Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5 V to 6.0 V Power Supply 700 MHz to 3800 MHz Operation

Contextual Info: HY638256 •HYUNDAI 32Kx 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni­

Contextual Info: RF3863 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER ̈ NC NC 13 NC 1 12 NC NC 2 11 RF OUT RF IN 3 10 NC NC 4 9 NC 5 6 7 8 NC ̈ 14 ACG ̈ 15 NC ̈ Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply

LA66

Abstract: LA6632 EN38S3A
Contextual Info: Ordering number: EN38S3A Monolithic Linear 1C LA8632, LA8632M No. 3853A SA iY O Low-voltage, Low-current Compander I OVERVIEW PINOUT The LAS 632 and LA8632M are low-voltage, lowcurrent compander ICs for battery-powered, cordless telephone applications. IPF1IN[T

8086 minimum mode and maximum mode

Abstract: timing diagram of 8086 maximum mode 8086 microprocessor architecture diagram timing diagram of 8086 minimum mode max and min mode 8086 8086 microprocessor APPLICATIONS block and pin diagram of 8086 addressing modes 8086 8086 minimum mode 8086 microprocessor pin diagram
Contextual Info: 8086 16-Bit Microprocessor ¡APX86 Family MILITARY INFORMATION 8086 DISTINCTIVE CHARACTERISTICS • • • • • Directly addresses up to 1 Mbyte of memory 24 operand addressing modes Efficient implementation of high-level languages Instruction set compatible with 8080 software

Contextual Info: RDM VMF STEP-UP DC/DC CONVERTER RN5RKXX1 A / x x 1 B/XX2A SERIES OUTLINE The RN5RKXX1A/ XX1B/ XX2A Series are VFM Chopper Step-up DC/ DC converter ICs with ultra low supply current and high output voltage accuracy by CMOS process. The RN5RKXX1A/ XX1B consist of an oscillator, a VFM control circuit, a driver transistor to have low ON resistance (Lx

MB88341P

Abstract: MB88341
Contextual Info: September 1989 TM419-A899 D ATA SH EET• FUJITSU MB88341/MB88342 R-2R TYPE 8-BIT D/A CONVERTER DESCRIPTION The Fujitsu MB88341 and MB88342 are R-2R type 8-b it resolution digital-to-analog converters DAC , designed for interface with a wide range of general 4 -b it and 8-b it

Contextual Info: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling

RF3861

Abstract: RF3863 RF3863PCK-410 RF3863PCK-411 RF3863PCK-412 GaAs MESFET amplifier with high input impedance
Contextual Info: RF3863 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER „ NC NC 13 NC 1 12 NC NC 2 11 RF OUT RF IN 3 10 NC NC 4 9 NC 5 6 7 8 NC „ 14 ACG „ 15 NC „ Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply

LC8800

Abstract: LC89000 8900c LC8900 7W07b FS48K 31-4804
Contextual Info: SANYO SEMICONDUCTOR CORP S3E T> • 7^7071, 0010417 ôôb W T S A J T - S ?.- S e - I O lifc g a -K N a EN3743 ~1 No. 3 743 ~ ~ L C 8 9 0 0 iL C 8 9 0 0 Q SAXYO CM OS LSI Digital Audio Interface Receiver Overview: The LC8900/8900Q is a C M O S L SI circuit chip that can be used to enable the E1AJ form atted data transmission

HYM536120

Contextual Info: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling

Contextual Info: •HYUNDAI HYM532814A M -Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.IjjF and 0.01 nF decoupling capacitors are

Contextual Info: •HYUNDAI HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Rage mode CMOS ORAM module consisting of four HY5117800B In 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for

KM684000BLP-7

Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
Contextual Info: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types

Contextual Info: Tem ic HM 65789 MATRA MHS 16 K x 4 High Speed CMOS SRAM with Output Enable Introduction The HM 65789 is a high speed CMOS static RAM organized as 16384 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum

HY5118160

Abstract: HYM532120
Contextual Info: •HYUNDAI HYM532120 W -Series 1 M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each

Contextual Info: SANYO SEMICONDUCTOR CORP S3E » im T Q lh 0G1GG73 Tfil « T S A J T- 7 7 -0 7 -0 7 Monolithic Linear 1C LA7285, LA7285M V C R Audio Processor Advanced Information OVERVIEW PINOUT Tbe LA7285 and LA7285M are audio processor lCs bat incorporate all tbe functions required for a complete

Contextual Info: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are