242HG Search Results

Contextual Info: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.

mb 428

Abstract: MSC23C232A-60BS4 MSC23C232A-70BS4 MSC23C232A-80BS4
Contextual Info: O K I Semiconductor MSC23C232A-xxBS4 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23C232A-xxBS4 is a fully decoded 2,097,152-word x 32-bit CMOS Dynamic Random Access M em ory M odule com posed of four 16-Mb DRAMs 2M x 8 in TSOP packages

SL8080

Contextual Info: O K I Sem iconductor MSM5 14 9 0 0 /SL_ 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900/SL is a 524,288-word x 9-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514900/SL achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM534031B 524,288-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM534031B is a high-speed silicon gate CMOS Mask ROM with 524,288-word x 16-bit capacity. The MSM534031B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times

Contextual Info: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM DESCRIPTION The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524,288 words x 8 bits. The MSM27C431AZB operates on a single 3.3 V power supply and is TTL compatible. Since

Contextual Info: 4bE D rtTTT - • b72424D ODD'mûô I T S H O K I J I O K I SEMICONDUCTOR GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 2 6 2 ,1 4 4 W O RD X1-BITS D Y N A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.