ULTRASONIC PHASED ARRAY Search Results

medical ultrasonic probe

Abstract: ultrasonic transducers ultrasonic piezoelectric 10MHz 5MHz medical transducer probe 1 MHZ ULTRASONIC transducers ultrasonic phased array MHZ ULTRASONIC transducers phased array ultrasonic transducer medical ultrasonic crystal Piezoelectric transducer array
Contextual Info: Since the company was established in 1948, NDK has manufactured and sold synthetic quartz crystal and various products using the crystal such as crystal units, crystal oscillators, crystal filters, SAW filters, optical parts and other applied products. Utilizing the product

ultrasound piezoelectric design probe transducer

Abstract: ultrasound transducer circuit oscillator ultrasound block diagram ultrasound doppler circuit PREAMPLIFIER ultrasound transducer water level ultrasound medical blood flow doppler circuit biomedical ultrasonic transducer medical application of ultrasonic waves motion ultrasound DOPPLER
Contextual Info: Ultrasound System Considerations and their Impact on FrontEnd Components Eberhard Brunner  Analog Devices, Inc. 2002 Introduction Medical ultrasound machines are some of the most sophisticated signal processing machines in use today. As in any machine there are many trade-offs in implementations due to performance

ultrasonic radar

Abstract: ultrasonic bond diagram radar circuit ultrasonic amplifier circuit diagram LMA411 ultrasonic phased array bonding
Contextual Info: 8.5-14GHz PHEMT Amplifier Filtronic LMA411 Solid State Features • • • • • • • • • • 2dB Typical Noise Figure 18dB Typical Gain 19dBm Saturated Output Power 12dB Input/Output Return Loss Typical 8.5-14GHz Frequency Bandwidth +6 Volts Single Bias Supply

Contextual Info: W hpl H EW LETT mUHM P A C K A R D Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND 4028 HPND 4038 Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec • Low R esistance at Low Bias

ultrasonic phased array

Abstract: s-parameter s11 s12 s21 ablestik 958 s-parameter file of HPND-4028 HPND-4038 hpnd pin 0.01 pF 4028 BE HPND4028 HPND-4028 HPND4038
Contextual Info: HPND-4028, HPND-4038 Beam Lead PIN Diodes for Phased Arrays and Switches Data Sheet Description Features The HPND-4028 and 4038 beam lead PIN diodes are ­designed for low capacitance, low resistance, and fast switch­ing at microwave frequencies. These characteristics are achieved at low bias levels for minimal power

HPND-4028 pin diode

Abstract: hpnd pin 0.01 pF
Contextual Info: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)

HPND-4028 pin diode

Contextual Info: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)

HPND-4028 pin diode

Abstract: hpnd pin 0.01 pF HPND-4028 ultrasonic phased array HPND4028 HPND4038 HPND-4038 4028 BE
Contextual Info: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)

Contextual Info: NEC GaAs S-BAND LOW NOISE AMPLIFIER CHIP FEATURES UPG122P GAIN vs. FREQUENCY LOW NOISE FIGURE: NF £ 2 .2 dB @ f = 2.7 to 4.2 G Hz HIGH POWER GAIN: G p = 24 dB @ f = 2.7 to 3 .4 G H z DESCRIPTION The U PG 122P GaAs amplifier has very low noise character­

block diagram of ultrasound scanner

Abstract: dm6437 ATAN phased array probe scan converter SPRAB32 ultrasound DM6446 SU-31 Ultrasonic velocity
Contextual Info: Application Report SPRAB32 – March 2009 Ultrasound Scan Conversion on TI’s C64x+ DSPs Xiaohui Li. ABSTRACT One of the recent significant developments in ultrasound is the emergence of portable

ultrasonic radar

Abstract: LMA219B MIL-HDBK-263 ultrasonic phased array
Contextual Info: LMA219B LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 7 GHz to 11 GHz Frequency Band 1.4 dB Noise Figure 19 dB Gain 14 dBm Output Power at Saturation +3 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA219B is a low noise PHEMT amplifier which operates from 7 to

HPND-4018

Abstract: s-parameter s11 s12 s21 10000 s-parameter s11 s12 s21 ablestik 958 beam lead PIN diode hp 4028 ultrasonic phased array ultrasonic welding HPND-4028 HPND-4038
Contextual Info: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7)

LMA246

Abstract: ultrasonic radar pHEMT transistor 360 MIL-HDBK-263 Filtronic LMA246
Contextual Info: LMA246 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 9 GHz to 14 GHz Frequency Band 2.2 dB Noise Figure 25.5 dB Gain 19 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA246 is a high gain low noise PHEMT amplifier that operates from 9 to

ultrasonic radar

Abstract: LMA411 MIL-HDBK-263 ultrasonic phased array low noise amplifier MMIC
Contextual Info: LMA411 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 8.5 GHz to 14 GHz Frequency Band 2 dB Noise Figure 18 dB Gain 19 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA411 is a high dynamic range low noise PHEMT amplifier that

p-hemt

Contextual Info: LMA411 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 8.5 GHz to 14 GHz Frequency Band 2 dB Noise Figure 18 dB Gain 17 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA411 is a high dynamic range low noise PHEMT amplifier that

HPND-4028 pin diode

Contextual Info: What mLliM HEWLETT* PACKARD Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0nsec • Low Resistance at Low Bias

WALMSLEY MICROSYSTEMS

Abstract: STA10 "matched transistor" STA10 transistor is4128 CMOS spice model "magnetic tape"
Contextual Info: ttjM a Walmsley BlHm §IH!EET M ICRO SYSTEM S LIM ITED STA10 MIXED ANALOGUE/DIGITAL CMOS ARRAY The STA10 is a sim ple mixed analogue/digital CMOS com ponent array ASIC specifically designed for very low cost applications. A single layer of m etal is used to interconnect the predefined com ponents in the array

motion ultrasound DOPPLER

Abstract: ultrasound doppler circuit motion DOPPLER ultrasonic doppler medical application of ultrasonic waves ultrasonic doppler flow "blood flow" cardiography prosthetic doppler
Contextual Info: 5 Novel Application of Tissue Doppler Imaging 10 20 30 40 50 60 By Edmund K. Kerut, M.D., F.A.C.C. Associate Professor of Medicine, Tulane University, New Orleans, Louisiana Director, Echocardiography Laboratory, Heart Clinic of Louisiana, Marrero, Louisiana

Ic D 1708 ag

Contextual Info: warn HEWLETT %SKM PA CK A R D Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low C apacitance 0.025 pF Maximum a t 1 MHz G uaranteed Min./Max. • F ast Sw itching 2.0 nsec • Low R esistan ce a t Low B ias

Contextual Info: GaAs MMIC Power Amplifier 2.0 - 6.5 GHz MAAM26100 V3 Features • • • • • Die Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output Description M/A-COM’s MAAM26100 is a GaAs MMIC two

MA4BPS101

Abstract: MA4BPS301 PIN diode MACOM SPICE model MA4BPS201 Three bond 09CP
Contextual Info: PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 MA4BPS101, MA4BPS201, MA4BPS301 PIN Diode Chips with Offset Bond Pads Features • • • • • Chip Layout Bond Pads Removed From Active Junction Large Bond Pads Support Multiple Bond Wires

HMC-ALH369

Contextual Info: HMC-ALH369 v03.0709 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios

Contextual Info: HMC-ALH369 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios

Contextual Info: HMC-ALH369 v03.0709 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios