ULTRAFAST 10A 600V Search Results

SF10A600H

Abstract: symbol of diode sf10a600
Contextual Info: SF10A600H Ultrafast Recovery Rectifier 600V, 10A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode

Contextual Info: SF10A600H Ultrafast Recovery Rectifier 600V, 10A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode

SF10A600HPI

Abstract: sf10a600 sF10A60 sf10a600h
Contextual Info: SF10A600HPI Ultrafast Recovery Rectifier 600V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<35ns  Low power loss and high efficiency  Dual common cathode rectifier construction

sf10a600

Abstract: sf10a600h SF10A600HPI
Contextual Info: SF10A600HPI Ultrafast Recovery Rectifier 600V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction

F10H60S

Abstract: FFPF10H60S FFPF10H60STU
Contextual Info: FFPF10H60S Hyperfast 2 Rectifier tm Features 10A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=25ns(Typ. @ IF=10A ) The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is

Contextual Info: FFPF10H60S Hyperfast 2 Rectifier tm Features 10A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=25ns(Typ. @ IF=10A ) The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is

F20UP60DN

Abstract: FFPF20UP60DNTU FFPF20UP60DN ultrarf 100C80 F20UP60
Contextual Info: FFPF20UP60DN tm Features 20A, 600V Ultrafast Rectifier • High Speed Switching, trr < 70ns @ IF = 10A The FFPF20UP60DN is a ultrafast rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

F20UP60DN

Contextual Info: FFPF20UP60DN tm Features 20A, 600V Ultrafast Rectifier • High Speed Switching, rrt < 70ns @ IF = 10A • High Reverse Voltage and High Reliability The FFPF20UP60DN is a ultrafast rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

F10H60S

Abstract: FFPF10H60S FFPF10H60STU
Contextual Info: FFPF10H60S Hyperfast Recovery Power Rectifier tm Features General Description • High Speed Switching trr=25ns(Typ. @ IF=10A ) The FFPF10H60S is hyperfast rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is

UD1006

Contextual Info: Ordering number : ENA1745A UD1006FR Planar Ultrafast Rectifier http://onsemi.com Low VF type, 10A, 600V, 1.3V, TO-220F-2FS Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters

Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

GF1005C-GF1020C

Abstract: GF10 GF1005C-GF1060C
Contextual Info: GF1005C-GF1060C Super Fast Rectifiers Reverse Voltage: 50 - 600V Forward Current: 10A TO-220AB Low switching losses,high efficiency 1.4± 0.2 Low forward voltage drop Ultrafast recovery times Solder Dip 260°C ,10 seconds The plastic material carries U/L recognition 94V-0

igbt 50V 420A

Abstract: irg7ic irg7i 105MH
Contextual Info: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner

Contextual Info: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

IRG4BC20SD

Contextual Info: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

IRG4BC20SD

Contextual Info: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

MOSFET 40A 600V

Abstract: inverter circuit 200v to 100v mosfet 600V 10A ic
Contextual Info: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

FFPF10UA60ST

Abstract: FFPF10UA60S
Contextual Info: Ultra Fast II Rectifier FFPF10UA60ST tm Features 10A, 600V Ultra Fast II Rectifier • High Speed Switching, trr < 120ns The FFPF10UA60ST is ultrafast rectifier with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping rectifiers in a variety of switching

Contextual Info: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

Contextual Info: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A C E G E Applications • • • • TO-220AB Full-Pak n-channel Air Conditioner Compressor

Contextual Info: PD -95691A IRG4BC20SD-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

AN-994

Abstract: IRG4BC20SD-S
Contextual Info: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

AN-994

Abstract: IRG4BC20SD-S irg4bc
Contextual Info: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4